AOSMD AO8810 20v common-drain dual n-channel mosfet Datasheet

AO8810
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8810 uses advanced trench technology to provide
excellent RDS(ON), low gate charge. It is ESD protected.
This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain
configuration.
VDS
20V
7A
ID (at VGS=4.5V)
RDS(ON) (at VGS= 4.5V)
< 20mΩ
RDS(ON) (at VGS = 4.0V)
< 20.5mΩ
RDS(ON) (at VGS = 3.1V)
< 21.5mΩ
RDS(ON) (at VGS = 2.5V)
< 23mΩ
RDS(ON) (at VGS = 1.8V)
< 28mΩ
ESD protected
Top View
TSSOP8
Bottom View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
Gate-Source Voltage
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Rev 8: Oct. 2012
Steady-State
Steady-State
±8
V
A
1.5
W
1.0
TJ, TSTG
Symbol
t ≤ 10s
Units
V
25
PD
TA=70°C
Maximum
20
5.7
IDM
TA=25°C
S2
7
ID
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1.8KΩ
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Power Dissipation B
G2
1.8KΩ
Pin 1
Continuous Drain
Current
D2
D1
TSSOP-8
Top View
RθJA
RθJL
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-55 to 150
Typ
64
89
53
°C
Max
83
120
70
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO8810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
±10
VGS=4.5V, ID=7A
TJ=125°C
VGS=4.0V, ID=7A
0.7
1.1
16
20
22
30
16.2
20.5
mΩ
17
21.5
mΩ
VGS=2.5V, ID=6.5A
18
23
mΩ
VGS=1.8V, ID=5A
21
28
mΩ
1
V
2
A
Forward Transconductance
VDS=5V, ID=7A
50
Diode Forward Voltage
IS=1A,VGS=0V
0.62
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mΩ
VGS=3.1V, ID=6.5A
gFS
Output Capacitance
µA
V
A
VSD
Coss
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
S
1295
pF
VGS=0V, VDS=10V, f=1MHz
160
pF
87
pF
VGS=0V, VDS=0V, f=1MHz
1.8
KΩ
SWITCHING PARAMETERS
Qg
Total Gate Charge
10
VGS=4.5V, VDS=10V, ID=7A
14
nC
Qgs
Gate Source Charge
4.2
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
280
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=4.5V, VDS=10V, RL=1.54Ω,
RGEN=3Ω
328
ns
3.76
us
2.24
us
ns
nC
trr
Body Diode Reverse Recovery Time
IF=7A, dI/dt=100A/µs, VGS=-9V
31
Qrr
Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs, VGS=-9V
6.8
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: Oct. 2012
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Page 2 of 5
AO8810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
VDS=5V
2.5V
25
1.8V
20
3.1V
20
4.5V
ID(A)
ID (A)
15
15
10
VGS=1.5V
10
25°C
5
5
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
24
VGS=1.8V
20
VGS=2.5V
VGS=3.1V
18
16
VGS=4.5V
VGS=4.0V
14
Normalized On-Resistance
1.6
22
RDS(ON) (mΩ
Ω)
125°C
VGS=4.5V
ID=7A
VGS=4.0V
ID=7A
1.4
VGS=3.1V
ID=6.5A
1.2
17
VGS=2.5V
ID=6.5A
5
2
10
VGS=1.8V
ID=5A
1
0.8
12
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40
1.0E+01
ID=7A
1.0E+00
40
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
30
1.0E-02
125°C
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 8: Oct. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO8810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1800
VDS=10V
ID=7A
1600
1400
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1200
1000
800
600
400
1
Coss
200
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1ms
1.0
10ms
100ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
10.0
ID (Amps)
20
100
10
10s
DC
1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=120°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: Oct. 2012
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Page 4 of 5
AO8810
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 8: Oct. 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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