TriQuint AG303-86G Lead-free/rohs-compliant sot- 86 package Datasheet

AG303-86
InGaP HBT Gain Block
Product Description
Functional Diagram
The AG303-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG303-86 typically provides
20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 °C and is housed in a leadfree/RoHS-compliant SOT-86 (micro-X) industry-standard
SMT package.
GND
Product Features
•
•
•
•
•
•
•
•
DC – 6000 MHz
20.5 dB Gain @ 900 MHz
+14 dBm P1dB @ 900 MHz
+26 dBm OIP3 @ 900 MHz
Single Voltage Supply
Internally matched to 50 Ω
Robust 1000V ESD, Class 1C
Lead-free/RoHS-compliant SOT86 package
Applications
•
•
•
•
•
RF In
3 RF Out
1
2
GND
The AG303-86 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG303-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
Specifications (1)
Parameter
4
Typical Performance (1)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
DC
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Device Voltage
Device Current
16.9
Typ
900
20.4
22
20
+14
+26.1
+34
3
1900
18.1
+12.7
+24.8
4.23
35
Max
Parameter
6000
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
500
21.1
-21
-22
+14.0
+26.4
2.9
900
20.4
-22
-20
+14.0
+26.1
3.0
1900
18.1
-26
-16
+12.7
+24.8
3.2
2140
17.5
-25
-16
+12.4
+24.4
3.2
18.9
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
Junction Temperature
Rating
-55 to +125 °C
+5 V
+10 dBm
335°C/W
+177°C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AG303-86G
AG303-86PCB
Description
InGaP HBT Gain Block
(lead-free/RoHS-compliant SOT-86 Package)
700 – 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 13” reel
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 1 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 Ω, Icc = 35 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
21.4
-25
-19
+14.2
+26.5
2.9
500
21.1
-21
-22
+14.0
+26.4
2.9
900
20.4
-22
-20
+14.0
+26.1
3.0
1900
18.1
-26
-16
+12.7
+24.8
3.2
2140
17.5
-25
-16
+12.4
+24.4
3.2
2400
16.9
-25
-15
+12.1
+23.9
3.2
3500
14.9
-25
-15
+9.3
5800
11.4
-25
-14
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 Ω, Icc = 35 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
Return Loss
I-V Curve
0
Device Current (mA)
60
S11, S22 (dB)
20
18
16
-10
-20
-30
14
-40 C
+25 C
S11
+85 C
1
2
Frequency (GHz)
3
0
4
1
3
4
5
35
20
15
1.5
2
2.5
4
0
+25c
+85c
-40 C
200
400
600
800
0
1000
20
G a in (d B )
15
10
20
18
16
16
Gain
18
12
16
8
14
4
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
0
-20
-16
-12
-8
-4
Input Power (dBm)
1.5
2
2.5
3
16
12
Gain
14
8
12
4
10
0
Output Power
12
0.5
1
frequency = 2000 MHz
Output Power
0
+85 C
Output Power / Gain vs. Input Power
frequency = 900 MHz
5
+85 C
+25 C
Frequency (GHz)
Output Power / Gain vs. Input Power
22
0
0.5
Frequency (MHz)
P1dB vs. Frequency
+25 C
2
0
Frequency (GHz)
-40 C
3
1
-40c
20
4.5
Noise Figure vs. Frequency
30
3
4.0
Device Voltage (V)
20
1
3.5
5
+85 C
10
0.5
10
0
3.0
25
0
20
6
N F (d B )
25
+25 C
30
Output IP2 vs. Frequency
40
OIP2 (dBm)
OIP3 (dBm)
Output IP3 vs. Frequency
P1dB (dBm)
2
Optimal operating point
40
Frequency (GHz)
30
-40 C
50
-40
12
0
S22
O u tp u t P ow e r (d B m )
G a in (d B )
G a in (d B )
22
O u tp u t P ow e r (d B m )
24
0
4
8
-4
-20
-16
-12
-8
-4
Input Power (dBm)
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
0
4
Page 2 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 51 Ω, Icc = 35 mA
Gain vs. Frequency
Output IP3 vs. Frequency
24
Output IP2 vs. Frequency
30
40
25
35
20
18
16
OIP2 (dBm)
OIP3 (dBm)
G a in (d B )
22
20
15
25
14
-40 C
+25 C
-40 C
+85 C
0
1
2
Frequency (GHz)
+25 C
+85 C
3
0
4
+25c
+85c
20
0.5
1
1.5
2
2.5
3
0
200
Frequency (GHz)
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
P1dB vs. Frequency
5
20
4
15
N F (d B )
P1dB (dBm)
-40c
10
12
30
10
5
-40 C
+25 C
3
2
1
+85 C
-40 C
+25 C
+85 C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 108 Ω, Icc = 35 mA
Output IP3 vs. Frequency
Gain vs. Frequency
24
Output IP2 vs. Frequency
30
40
25
35
20
18
16
OIP2 (dBm)
OIP3 (dBm)
G a in (d B )
22
20
25
15
14
-40 C
-40 C
+25 C
+25 C
-40c
+85 C
+85 C
0
1
2
Frequency (GHz)
3
0
4
0.5
1
1.5
2
2.5
0
3
200
+85c
400
600
800
1000
Frequency (MHz)
Frequency (GHz)
Noise Figure vs. Frequency
P1dB vs. Frequency
5
20
4
15
N F (d B )
P1dB (dBm)
+25c
20
10
12
30
10
5
-40 C
+25 C
3
2
1
+85 C
-40 C
+25 C
+85 C
0
0
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 3 of 5 May 2009
AG303-86
InGaP HBT Gain Block
Application Circuit
Vcc
Icc = 35 mA
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
RF OUT
AG303-86
C2
Blocking
Capacitor
C1
Blocking
Capacitor
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
L1
C1, C2
C3
C4
R1
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018 μF chip capacitor
Do Not Place
22.1 Ω 1% tolerance
Size
0603
0603
0603
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
5V
22.1 ohms
0603
6V
51 ohms
0805
7V
80 ohms
1206
8V
108 ohms
1210
9V
137 ohms
1210
10 V
166 ohms
1210
12 V
223 ohms
2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
0603
Typical Device Data
S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25 °C, calibrated to device leads)
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-25.41
-24.87
-21.45
-21.60
-22.37
-22.85
-23.73
-25.75
-25.80
-20.60
-21.35
-21.07
-20.28
-20.61
-21.43
-23.21
-25.23
-27.97
-28.62
-28.24
-27.40
-32.61
-38.22
-28.58
-24.71
-178.61
155.73
140.47
121.87
104.08
90.28
71.50
49.04
20.48
4.51
-10.34
-27.85
-38.57
-43.39
-46.83
-45.68
-33.68
-14.82
21.21
50.04
61.17
78.84
144.81
-149.36
-137.35
21.90
21.78
21.52
21.11
20.62
20.09
19.48
18.90
18.25
17.68
17.27
16.73
16.22
15.75
15.30
14.83
14.43
14.02
13.56
13.16
12.84
12.46
12.12
11.86
11.61
177.08
166.27
152.92
140.36
128.55
117.05
106.85
96.96
87.61
79.42
73.31
64.91
57.01
49.56
42.14
34.70
27.45
20.33
13.29
5.94
-0.90
-7.21
-13.47
-19.80
-26.11
-24.39
-24.78
-24.79
-24.66
-24.69
-24.39
-23.69
-23.87
-23.36
-23.35
-23.42
-22.38
-22.30
-22.06
-21.79
-21.14
-21.01
-20.54
-19.99
-19.74
-19.45
-19.53
-19.19
-18.83
-18.61
2.68
2.50
0.95
-0.65
-0.47
0.10
0.62
-1.60
-1.98
-1.35
-5.50
-6.48
-5.72
-7.56
-9.98
-14.32
-19.42
-19.39
-23.59
-27.50
-32.13
-34.94
-37.72
-41.09
-44.88
-19.43
-19.45
-22.15
-20.82
-19.91
-18.42
-17.78
-16.51
-16.04
-14.44
-14.66
-14.71
-15.40
-16.08
-16.63
-16.45
-15.95
-14.63
-13.70
-12.98
-12.53
-12.98
-13.34
-14.62
-15.38
-6.66
-23.90
-58.28
-83.69
-103.53
-120.77
-130.98
-140.18
-146.19
-135.98
-143.15
-151.02
-161.21
-172.88
172.37
152.74
135.04
121.85
110.85
104.47
101.02
97.98
99.21
100.79
100.73
Device S-parameters are available for download from the website at: http://www.Triquint.com
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 4 of 5 May 2009
AG303-86
InGaP HBT Gain Block
AG303-86G (Lead-free Sot-86 Package) Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be marked with a “P”
designator followed by a two-digit numeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“E” designator followed by a two-digit numeric
lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes ≥ 1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ≥ 1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 5 of 5 May 2009
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