20V、 、4.2A EC732336 N-Channel MOSFET Description The EC732336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Features and Benefits ▓ VDS = 20V,ID = 4.2A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ▓ High Power and current handing capability ▓ Lead free product is acquired ▓ Surface Mount Package Application ▓ Battery protection ▓ Load switch ▓ Power management Package Marking and Ordering Information Device Marking Device Device Package 2336 EC732336B1R SOT23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 4.2 A IDM 33 A PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 140 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 5C31N-Rev.F001 20V、 、4.2A EC732336 N-Channel MOSFET Electrical Characteristics (TA=25℃ ℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 µA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 1.2 V Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.6 VGS=2.5V, ID=3.6A 50 80 mΩ VGS=4.5V, ID=4.2A 35 45 mΩ VDS=10V,ID=4A 8 S 700 PF 100 PF 90 PF 7 nS 50 nS 26 nS 10 nS 9 nC 2 nC 1.8 nC DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time td(on) tr td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V,ID=3.6A VGS=4.5V,RGEN=6Ω R=2.8Ω VDS=10V,ID=4.2A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 5C31N-Rev.F001 20V、 、4.2A N-Channel MOSFET EC732336 Typical Electrical and Thermal Characteristics Figure 1:Switching Test Circuit Figure 2:Switching Waveforms Figure 3 Power Dissipation E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 4 5C31N-Rev.F001 20V、 、4.2A E-CMOS Corp. (www.ecmos.com.tw) N-Channel MOSFET Page 4 of 4 EC732336 5C31N-Rev.F001