IPT60R125G7 MOSFET 600VCoolMOSªG7PowerTransistor HSOF TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW Tab 12 Features •C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. •TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~1nH). •TOLLpackageisMSL1compliant,totalPb-free,haseasyvisual inspectiongroovedleadsandisqualifiedforindustrialapplications accordingtoJEDEC(J-STD20andJESD22). •TOLLSMDpackagecombinedwithleadfreedieattachprocessenables improvedthermalperformanceRth. 34 56 78 Drain Tab Gate Pin 1 Driver Source Pin 2 Benefits Source Pin 3-8 •C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •C7Goldcanreach28mΩininTOLL115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. •ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. •TOLLpackageiseasytouseandhasthehighestqualitystandards. •ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible. Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 125 mΩ Qg.typ 27 nC ID,pulse 54 A ID,continuous @ Tj<150°C 27 A Eoss@400V 3.27 µJ Body diode di/dt 720 A/µs Type/OrderingCode Package IPT60R125G7 PG-HSOF-8 Final Data Sheet Marking 60R125G7 1 RelatedLinks see Appendix A Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 20 12 A TC=25°C TC=100°C - 54 A TC=25°C - - 64 mJ ID=3.8A; VDD=50V; see table 10 EAR - - 0.32 mJ ID=3.8A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 3.8 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 120 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 20 A TC=25°C Diode pulse current IS,pulse - - 54 A TC=25°C Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD<=5.9A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 720 A/µs VDS=0...400V,ISD<=5.9A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 3 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.04 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 °C Final Data Sheet 4 reflow MSL1 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.32mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.108 0.269 0.125 - Ω VGS=10V,ID=6.4A,Tj=25°C VGS=10V,ID=6.4A,Tj=150°C Gate resistance RG - 0.8 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1080 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 22 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 41 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 420 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate charge total Qg - 27 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=6.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=6.4A,Tj=25°C 280 - ns VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 - 2.8 - µC VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 - 20 - A VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.8 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 130 1 ms 10 ms 120 10 µs 100 µs 1 µs 110 DC 100 101 90 70 ID[A] Ptot[W] 80 60 100 50 40 10-1 30 20 10 0 0 25 50 75 100 125 10-2 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 ms 10 ms DC 100 µs 10 µs 1 µs 101 100 ZthJC[K/W] ID[A] 0.5 100 0.2 0.1 10-1 0.05 10-1 0.02 0.01 single pulse -2 10 100 101 102 103 10 -2 10-5 10-4 10-3 VDS[V] 10-1 100 101 102 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 100 45 20 V 90 40 20 V 10 V 8V 80 10 V 8V 7V 35 7V 70 6V 30 5.5 V ID[A] ID[A] 60 50 25 20 40 5V 6V 15 30 20 5.5 V 10 5V 10 4.5 V 5 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.48 0.30 5.5 V 6V 6.5 V 7V 0.28 10 V 0.46 0.44 0.26 20 V 0.24 0.42 0.22 RDS(on)[Ω] RDS(on)[Ω] 0.40 0.38 0.36 0.34 0.20 0.18 98% 0.16 0.14 0.32 typ 0.12 0.30 0.10 0.28 0.08 0.26 20 VDS[V] 0 10 20 30 40 50 60 0.06 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=6.4A;VGS=10V 8 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 100 12 120 V 90 25 °C 10 80 70 400 V 8 VGS[V] ID[A] 60 50 40 6 150 °C 4 30 20 2 10 0 0 2 4 6 8 10 0 12 0 5 10 VGS[V] 15 20 25 30 35 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 70 60 50 101 125 °C IF[A] EAS[mJ] 25 °C 40 30 100 20 10 10-1 0.0 0.5 1.0 1.5 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.8A;VDD=50V 9 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 103 C[pF] VBR(DSS)[V] 640 620 102 Coss 600 101 580 Crss 10 0 560 540 -60 -20 20 60 100 140 180 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 4.5 4.0 3.5 Eoss[µJ] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 6PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 L5 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0 SCALE 0.130 0.382 2 0.398 0 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 7.15 3.59 3.26 8 4.18 1.40 0.50 0.50 1.00 2.62 DOCUMENT NO. Z8B00176939 2 4mm 0.468 0.266 EUROPEAN PROJECTION 0.071 0.035 0.028 0.051 0.111 ISSUE DATE 28-04-2015 0.281 0.141 0.128 8 0.165 1.80 0.90 0.70 1.30 2.81 0.055 0.020 0.020 0.039 0.103 REVISION 01 Figure1OutlinePG-HSOF-8 Final Data Sheet 12 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 7AppendixA Table11RelatedLinks • IFXCoolMOSTMG7Webpage:www.infineon.com • IFXCoolMOSTMG7applicationnote:www.infineon.com • IFXCoolMOSTMG7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2016-12-15 600VCoolMOSªG7PowerTransistor IPT60R125G7 RevisionHistory IPT60R125G7 Revision:2016-12-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-15 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2016-12-15