WJ FP2189-PCB2140S 1-watt hfet Datasheet

FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Product Features
Product Description
50 – 4000 MHz
+30 dBm P1dB
+43 dBm Output IP3
High Drain Efficiency
18.5 dB Gain @ 900 MHz
Lead-free/Green/RoHS-compliant
SOT-89 Package
• MTTF >100 Years
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Saturated Drain Current, Idss (1)
Transconductance, Gm
Pinch Off Voltage, Vp (2)
RF Parameter (3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50 Ω, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (4)
Noise Figure
Drain Bias
GND
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
4
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTTF of
greater than 100 years at a mounting temperature of 85 °C
and is available in both the standard SOT-89 package and
the
environmentally-friendly
lead-free/green/RoHScompliant and green SOT-89 package. All devices are
100% RF & DC tested.
1
2
3
RF IN
GND
RF OUT
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Typical Performance (5)
Specifications
DC Parameter
Functional Diagram
Units Min
Typ
Max
445
615
280
-2.1
705
Units Min
Typ
Max
mA
mS
V
MHz
MHz
dB
dB
dB
dBm
dBm
dB
50
4000
800
18.5
15
21
24
+30
+43
4.5
+8V @ 250 mA
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
Typical
MHz
dB
dB
dB
dBm
dBm
dB
915 1960 2140 2450
18.7 15.6 14.4 13.0
21
14.6
23
26
8.3
12
11.5
9.6
+30.2 +30.4 +30.6 +31.2
+42.8 +43.5 +43.9 +45.3
4.5
3.4
4.5
dBm
+24.5 +23.8
W-CDMA Ch. Power
+22.2
@ -45 dBc ACLR
Drain Voltage
Drain Current
V
mA
+8
250
5. Typical parameters represent performance in a tuned application circuit.
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 2.4 mA.
3. Test conditions unless otherwise noted: T = 25 ºC, VDS = 8 V, IDQ = 250 mA in an application circuit
with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, Vdg
Junction Temperature
-40 to +85 °C
-55 to +125 °C
4.0 W
6 dB above Input P1dB
+16 V
+220 °C
Ordering Information
Part No.
Description
FP2189-G
1 -Watt HFET
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Typical Device Data
S-Parameters (VDS = +8 V, IDS = 250 mA, T = 25 °C, calibrated to device leads)
S22
0
3.
0.
4
5 .0
0
2.
0
-4
.0
- 5.
0
10.0
5.0
4.0
3.0
2.0
.0
-2
-0.8
Swp Min
0.01GHz
-1.0
-0
.6
.0
-2
.4
-0
Swp Min
0.01GHz
-1.0
6
-0.8
5
-0
.6
4
-3
.0
3
Frequency (GHz)
-3
.0
1
0
2
1.0
1
-4
.0
-5.
0
-10.
2
2
-0 .
.4
-0
1
0.8
0.6
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
-1 0.0
0.
2
0.4
10 .0
4
3
2
2
- 0.
0
1.0
5.0
0. 2
0.2
0
4.
5
10.0
3
0
0
3.
6
0
4.
4
10
0.
4
MSG
20
0.8
2.
0
6
5
Swp Max
6GHz
6
0.
0.8
Swp Max
6GHz
6
0.
S21
S21, MSG (dB)
1.0
S11
S21 and Maximum Stable Gain
30
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines.
The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device.
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
0.995
-9.21
15.562
173.61
0.004
82.89
0.261
0.963
-43.33
14.312
151.51
0.017
65.62
0.263
0.906
-78.54
11.961
128.91
0.029
49.26
0.276
0.876
-104.31
9.735
111.97
0.036
34.34
0.288
0.851
-123.00
8.046
98.87
0.040
24.98
0.300
0.836
-138.30
6.765
86.96
0.042
17.12
0.315
0.834
-149.84
5.864
77.58
0.043
12.50
0.330
0.825
-159.46
5.090
68.80
0.043
8.49
0.346
0.827
-168.49
4.556
60.62
0.044
4.05
0.368
0.827
-176.39
4.049
52.41
0.043
0.16
0.378
0.826
177.53
3.660
45.61
0.043
-1.33
0.394
0.830
171.26
3.336
38.11
0.043
-3.95
0.416
0.829
165.08
3.054
30.79
0.043
-6.46
0.427
0.828
159.79
2.779
24.59
0.043
-6.43
0.445
0.836
154.28
2.596
18.29
0.043
-8.81
0.465
0.838
149.19
2.422
11.82
0.044
-8.46
0.478
0.839
144.09
2.276
5.12
0.044
-8.40
0.498
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-10.68
-46.04
-81.01
-103.33
-119.07
-130.86
-139.51
-147.68
-153.90
-160.68
-166.28
-171.43
-177.48
177.09
172.17
166.87
160.44
Load-Pull Data at 1.96 GHz
(Vds = 8 V, Ids = 250 mA, 25 °C, ZS = 50 Ω)
Output IP3
1.0
0.8
Swp Max
6GHz
2.
0
1.96 GHz
r 22 Ohm
x 2 Ohm
6
0.
2.
0
0.
6
0.8
1.0
P1dB
Swp Max
6GHz
0.
4
1.96 GHz
r 9.0 Ohm
x 11.0 Ohm
0.
4
0
3.
0
3.
0
4.
0
4.
5 .0
50
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
10.0
47
0
0. 2
0
5 .0
0. 2
48
30
46
45
-10.0
-10. 0
29
2
-0 .
28
-4
.0
- 5.
0
Maximum IP3 = +51 dBm at ZL = 9 + j11 Ω
-1.0
Swp Min
1e-009GHz
-0.8
-0
.6
.0
-2
-1.0
.4
-0
.0
-2
-3
.0
-0.8
-3
.0
-0
.6
-4
.0
.4
-0
- 5.
0
2
-0 .
Swp Min
1e-009GHz
Maximum P1dB = +30.9 dBm at ZL = 22 + j2 Ω
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Application Circuit: 870 – 960 MHz (FP2189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 250 mA, 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
MHz
dB
dB
dB
dBm
870
18.9
-24
-7.6
+30.0
dBm
915
18.7
-21
-8.3
+30.2
960
18.4
-12
-9.6
+30.0
+42.8
dB
4.2
dBm
4.5
4.5
+24.5
CAP
CAP
CAP
ID= C10
ID= C3
ID= C4
C=100 pF C= 1000 pF C=DNP pF
Vds =8V @ 250 mA
CAP
ID=C11
C=1e 5 p F
-Vgg
CAP
ID=C12
C=DNP pF
RES
ID= R1
R=100 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID= C1
C= 100 pF
CAP
ID=C 8
C=1000 pF
CAP
ID=C13
C=DNP p F
CAP
ID=C 7
C=100 pF
CAP
ID=C 2
C=DNP p F
CAP
ID=C 6
C=DNP pF
IND
ID=L4
L=5.6 nH
SUBCKT
ID=Q1
NET="FP2189"
IN D
ID=L1
L=18 nH
2
IN D
ID=L3
L=82 nH
IND
ID= L2
L= 5.6 nH
CAP
POR T
ID=C9
P=2
C=10 0 p F Z= 50 Ohm
1
CAP
ID= C15
C=4.7 pF
RES
ID=R 2
R=10 Ohm
CAP
ID=C5
C=2 .4 p F
CAP
ID= C14
C=DNP pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9, C13
C4, C8
C5
C11
L1
L2, L4
L3
R1
R2
Q1
C2, C6, C10, C12, C14
Value
100 pF
1000 pF
2.4 pF
0.1 µF
18 nH
5.6 nH
82 nH
100 Ω
10 Ω
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
FP2189-PCB900S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
19
-5
+85c
-10
S21 (dB)
-15
-20
18
17
-25
16
-30
15
-40c
860
880
900
920
940
960
860
880
5
30
28
26
+25c
920
940
960
860
940
960
3
2
860
freq = 915, 916 MHz
+15 dBm / tone
36
+25c
10
880
900
920
940
35
60
-80
24
14
20
16
Output Power
10
12
4
8
12
Input Power (dBm)
21
16
20
24
25
26
40
35
30
4
8
12
16
Output Power (dBm)
20
24
0
4
28
Gain
16
24
14
20
16
Output Power
10
4
8
12
Input Power (dBm)
16
20
frequency = 915 MHz, Temp = +25°C
24
18
32
28
Gain
16
24
14
20
12
16
Output Power
10
12
0
8
12
16
Output Power (dBm)
Output Power / Gain vs. Input Power
20
32
18
-4
23
OIP3 vs. Output Power
frequency = 915 MHz, Temp = +85°C
12
22
fundamental frequency = 915 MHz, 916 MHz; Temp = +25°C
50
IMD_High
0
Gain (dB)
16
Output Power (dBm)
28
0
20
Output Power / Gain vs. Input Power
Gain
+85 C
Output Channel Power (dBm)
IMD_Low
20
32
+25 C
45
-60
85
frequency = 915 MHz, Temp = -40°C
-4
-60
960
-40
Output Power / Gain vs. Input Power
12
-50
-40 C
fundamental frequency = 915 MHz, 916 MHz; Temp = +25°C
Temperature (°C)
20
-40
Gain (dB)
-15
960
freq = 915 MHz
+85c
-100
-40
940
OIP3 (dBm)
IMD products (dBm)
40
920
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
IMD products vs. Output Power
-20
42
900
-70
OIP3 vs. Temperature
38
880
Frequency (MHz)
44
+85c
ACPR vs. Channel Power
0
920
+25c
Frequency (MHz)
4
-40c
46
OIP3 (dBm)
900
-30
Frequency (MHz)
Gain (dB)
-40c
1
+85c
24
18
-25
+85c
ACPR (dBc)
32
900
-20
Noise Figure vs. Frequency
6
NF (dB)
P1dB (dBm)
P1dB vs. Frequency
880
-15
Frequency (MHz)
34
860
-10
-30
Frequency (MHz)
-40c
+25c
Output Power (dBm)
S11 (dB)
+25c
0
S22 (dB)
-40c
-5
S22 vs. Frequency
20
20
Output Power (dBm)
0
12
-4
0
4
8
12
Input Power (dBm)
16
20
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Application Circuit: 1930 – 1990 MHz (FP2189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 250 mA, 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
MHz
dB
dB
dB
dBm
1930
15.6
-15.4
-12
+30.2
1960
15.6
-14.6
-12
+30.4
dBm
1990
15.4
-13.2
-12
+30.5
+43.5
dB
3.4
3.4
dBm
3.6
+23.8
CAP
CAP
CAP
ID=C3
ID=C10
ID=C4
C=33 pF C=1000 pF C=DNP pF
-Vgg
Vds=8V @ 250 mA
RES
ID=R1
R=20 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C8
C=10000 pF
CAP
ID=C11
C=DNP pF
CAP
ID=C6
C=1000 pF
CAP
ID=C2
C=2.4 pF
CAP
ID=C7
C=33 pF
CAP
ID=C1
C=33 pF
IND
ID=L1
L=10 nH
SUBCKT
ID=Q1
NET="FP2189"
RES
ID=R2
R=5.1 Ohm
IND
ID=L2
L=22 nH
2
CAP
ID=C9
C=33 pF
PORT
P=2
Z=50 Ohm
1
CAP
ID=C13
C=2.4 pF
CAP
ID=C12
C=DNP pF
CAP
ID=C5
C=DNP pF
CAP
ID=C14
C=1.5 pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9
C2, C13
C4, C6
C8
C14
L1
L2
R1
R2
Q1
C5, C10, C11, C12
Value
100 pF
2.4 pF
1000 pF
0.1 µF
1.5 pF
10 nH
22 nH
20 Ω
5.1 Ω
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
FP2189-PCB1900S Application Circuit Performance Plots
S21 vs. Frequency
-5
16
-5
-10
-15
-20
S22 (dB)
0
15
14
13
-25
1930
1950
+25C
1970
1930
1950
5
30
28
26
+25c
1970
3
2
1990
1930
1950
42
40
freq = 1960, 1961 MHz
+15 dBm / tone
36
+25c
-60
1970
60
18
1990
19
-80
12
20
16
Output Power
8
12
16
8
12
16
Output Power (dBm)
20
20
24
0
28
Gain
24
20
12
10
16
Output Power
20
frequency = 1960 MHz, Temp = +85°C
24
32
28
16
14
24
Gain
20
12
10
16
8
12
4
8
12
Input Power (dBm)
8
12
16
Output Power (dBm)
Output Power
8
0
4
18
32
16
-4
26
Output Power / Gain vs. Input Power
frequency = 1960 MHz, Temp = +25°C
14
25
30
4
Gain (dB)
24
24
35
IMD_High
0
Gain (dB)
14
Output Power (dBm)
28
Gain
23
40
Output Power / Gain vs. Input Power
16
22
fundamental frequency = 1960, 1961 MHz; Temp = +25°C
50
IMD_Low
18
32
21
45
Temperature (°C)
frequency = 1960 MHz, Temp = -40°C
20
OIP3 vs. Output Power
fundamental frequency = 1960, 1961 MHz; Temp = +25°C
-60
Output Power / Gain vs. Input Power
+85 C
Output Channel Power (dBm)
-40
85
+25 C
-70
Output Power (dBm)
35
4
8
12
Input Power (dBm)
-50
-40 C
+85c
-100
0
-40
OIP3 (dBm)
IMD products (dBm)
44
18
freq = 1960 MHz
IMD products vs. Output Power
-20
10
1990
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
Frequency (MHz)
OIP3 vs. Temperature
-15
1970
ACPR vs. Channel Power
0
-40
1950
+85C
Frequency (MHz)
4
-40c
46
Gain (dB)
1930
-30
Frequency (MHz)
-4
1990
+25C
1
+85c
24
10
1970
ACPR (dBc)
32
1950
-40C
Noise Figure vs. Frequency
6
NF (dB)
P1dB (dBm)
P1dB vs. Frequency
38
+85C
Frequency (MHz)
34
1930
-20
-30
Frequency (MHz)
-40c
+25C
12
1990
-15
-25
-40C
+85C
-10
Output Power (dBm)
-40C
-30
OIP3 (dBm)
S22 vs. Frequency
17
S21 (dB)
S11 (dB)
S11 vs. Frequency
0
16
20
12
-4
0
4
8
12
Input Power (dBm)
16
20
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Application Circuit: 2110 – 2170 MHz (FP2189-PCB2140S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 250 mA, 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
W-CDMA Channel Power
@ -45 dBc ACPR
MHz
dB
dB
dB
dBm
2110
14.4
-23
-9.7
+30.5
dBm
dB
2140
14.4
-23
-11.5
+30.6
+43.9
4.2
dBm
4.5
Vds=8V @ 250 mA
CAP
ID= C8
C=10000 pF
-Vgg
RES
ID=R1
R=10 Ohm
PORT
P= 1
Z= 50 Ohm
4.3
+22.2
CAP
ID= C3
C=33 pF
CAP
ID= C1
C=1.8 pF
2170
14.4
-22
-12
+30.2
CAP
ID= C6
C=22 pF
CAP
ID= C2
C=DNP pF
IND
ID= L1
L=5.6 nH
SUBCKT
ID= Q1
NET="FP2189"
RES
ID=R2
R=6.2 Ohm
CAP
ID= C7
C=1000 pF
IND
ID= L2
L=18 nH
2
CAP
ID= C9
C=22 pF
PORT
P= 2
Z= 50 Ohm
1
CAP
ID=C4
C=DNP pF
CAP
ID=C11
C=1.8 pF
CAP
ID= C5
C=DNP pF
CAP
ID=C10
C=1 pF
Bill of Materials
Ref. Desig.
C1, C11
C3
C6, C9
C7
C8
C10
L1
L2
R1
R2
Q1
C2, C4, C5
Value
1.8 pF
33 pF
22 pF
1000 pF
0.1 µF
1.0 pF
5.6 nH
18 nH
10 Ω
6.2 Ω
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0805
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 7 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
FP2189-PCB2140S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
15
-5
+85c
-10
S21 (dB)
-15
-20
14
13
-25
12
-30
11
-40c
2110
2130
2150
2170
2110
2130
5
30
28
26
2150
2170
2
40
freq = 2140, 2141 MHz
+15 dBm / tone
36
+25C
+85C
2130
2150
2170
60
-80
12
24
10
20
Output Power
6
16
12
6
8
12
16
Output Power (dBm)
20
24
0
8
12
16
Output Power (dBm)
20
28
12
24
10
20
16
Output Power
frequency = 2140 MHz, Temp = +85°C
16
32
Gain
24
32
28
14
Gain
12
24
20
10
8
16
Output Power
6
6
12
10
14
18
Input Power (dBm)
4
Output Power / Gain vs. Input Power
frequency = 2140 MHz, Temp = +25°C
14 mil GETEKTM ML200DSS (εr = 4.2)
18can be 22
6
The 10
layout of14
this circuit
downloaded from2the website.
Input Power (dBm)
24
30
4
14
8
23
35
IMD_High
0
Gain (dB)
28
22
40
IMD_Low
Output Power / Gain vs. Input Power
Gain
21
45
16
32
20
OIP3 vs. Output Power
-60
85
Output Power (dBm)
14
19
+85 C
fundamental frequency = 2140, 2141 MHz; Temp = +25°C
50
-40
Output Power / Gain vs. Input Power
frequency = 2140 MHz, Temp = -40°C
18
+25 C
Output Channel Power (dBm)
fundamental frequency = 2140, 2141 MHz; Temp = +25°C
Temperature (°C)
16
-40 C
-60
Gain (dB)
35
-50
-55
-40C
-100
10
-45
OIP3 (dBm)
IMD products (dBm)
OIP3 (dBm)
42
2170
freq = 2140 MHz
IMD products vs. Output Power
44
2150
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
Frequency (MHz)
-20
-15
2130
ACPR vs. Channel Power
3
OIP3 vs. Temperature
Gain (dB)
2110
+85c
Frequency (MHz)
4
2110
46
2
2170
+25c
-40
Frequency (MHz)
8
2150
0
-40
-40c
-35
1
+85C
24
38
-25
+85c
ACPR (dBc)
32
2130
-20
Noise Figure vs. Frequency
6
NF (dB)
P1dB (dBm)
P1dB vs. Frequency
2110
-15
Frequency (MHz)
34
+25C
-10
-30
Frequency (MHz)
-40C
+25c
Output Power (dBm)
S11 (dB)
+25c
0
S22 (dB)
-40c
-5
S22 vs. Frequency
16
Output Power (dBm)
0
22
12
2
6
10
14
18
Input Power (dBm)
22
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 8 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Reference Design: 2400 – 2600 MHz
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 250 mA, 25 °C
(+15 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
2400
12.9
-14.5
-7.9
+31.1
2500
13.0
-26
-9.6
+31.2
2600
12.6
-15
-11.4
+30.8
dBm
+45.0
+45.3
+47.0
10
DB(|S[1,1]|)
(dB)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
S-Parameters
20
DB(|S[2,1]|)
-10
-20
The 2.4 – 2.6 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain an FP2189-PCB2140S evaluation board and modify it with the circuit
shown to achieve the performance shown in this reference design.
-30
2.2
2.3
2.4
2.5
2.6
Frequency (GHz)
CAP
ID=C3
C=33 pF
IND
ID=L1
L=5.6 nH
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=22 pF
2.7
2.8
Vds=8V @ 250 mA
CAP
ID=C8
C=1e4 pF
-Vgg
RES
ID= R1
R=10 Ohm
DB(|S[2,2]|)
0
CAP
ID=C6
C=22 pF
CAP
ID=C2
C=DNP pF
TLIN
ID=TL1
Z0=50 Ohm
EL= 11.8 Deg
F0=2400 MHz
SUBCKT
ID=Q1
NET="FP2189"
RES
ID=R2
R=5.6 Ohm
2
CAP
ID=C7
C=1000 pF
TLIN
ID= TL2
Z0=50 Ohm
EL= 23.5 Deg
F0=2400 MHz
IND
ID= L2
L= 18 nH CAP
ID=C9
C=22 pF
PORT
P= 2
Z= 50 Ohm
1
CAP
ID=C4
C=DNP pF
CAP
ID=C5
C=1.3 pF
CAP
ID=C11
C=1.8 pF
Bill of Materials
Ref. Desig.
C1, C6, C9
C3
C5
C11
C7
C8
L1
L2
R1
R2
Q1
C2, C4
Value
22 pF
33 pF
1.3 pF
1.8 pF
1000 pF
0.1 µF
5.6 nH
18 nH
10 Ω
5.6 Ω
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0805
0603
0603
0603
1206
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 9 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Reference Design: 3400 – 3600 MHz
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 250 mA, 25 °C
(+15 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
3400
12.6
-15
-7.6
+30.9
3500
13.0
-28
-7.9
+30.9
3600
12.9
-12
-9.1
+30.8
dBm
+43.8
+43.6
+43.8
10
DB(|S[1,1]|)
0
(dB)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
S-Parameters
20
DB(|S[2,1]|)
DB(| S[2,2]|)
-10
-20
The 3.4 – 3.6 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain an FP2189-PCB2140S evaluation board and modify it with the circuit
shown to achieve the performance shown in this reference design.
-30
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
3.7
3.8
Vds=8V @ 250 mA
-Vgg
RES
ID= R1
R= 20 Ohm
CAP
ID=C8
C=1e4 pF
CAP
ID=C3
C=33 pF
CAP
ID=C6
C=1000 pF
CAP
ID= C2
C= DNP pF
CAP
ID=C7
C=22 pF
PORT
P=1
Z=50 Ohm
CAP
ID= C1
C= 22 pF
IND
ID= L3
L=2.7 nH
IND
ID=L1
L=5.6 nH
SUBCKT
ID=Q1
NET="FP2189"
RES
ID=R2
R=6.2 Ohm
2
IND
ID= L2
L=15 nH
PORT
P=2
Z=50 Ohm
1
CAP
ID=C10
C= 0.3 pF
CAP
ID=C5
C=0.7 pF
CAP
ID=C4
C=1 .1 pF
CAP
ID= C9
C= 22 pF
Bill of Materials
Ref. Desig.
C1, C7, C9
C3
C4
C5
C6
C8
C10
L1
L2
L3
R1
R2
Q1
C2
Value
22 pF
33 pF
1.1 pF
0.7 pF
1000 pF
0.1 µF
0.3 pF
5.6 nH
15 nH
2.7 nH
20 Ω
6.2 Ω
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0805
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 10 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
Application Note: Constant-Current Active-Biasing
Special attention should be taken to properly bias the FP2189.
Power supply sequencing is required to prevent the device from
operating at 100% Idss for a prolonged period of time and possibly
causing damage to the device. It is recommended that for the safest
operation, the negative supply be “first on and last off.” With a
negative gate voltage present, the drain voltage can then be applied
to the device. The gate voltage can then be adjusted to have the
device be used at the proper quiescent bias condition.
+Vdd
R1
R2
U1
2
An optional active-bias current mirror is recommended for use with
the application circuits shown in this datasheet. Generally in a
laboratory environment, the gate voltage is adjusted until the drain
draws the recommended operating current. The gate voltage
required can vary slightly from device to device because of device
pinchoff variation, while also varying slightly over temperature.
C1
.01 µF
4 Rohm UMT1N 1
5
3
6
R4
1 kΩ
R3
R5
RF OUT
RF IN
The active-bias circuit, shown on the right, uses dual PNP transistors
to provide a constant drain current into the FP2189, while also
eliminating the effects of pinchoff variation. This configuration is
best suited for applications where the intended output power level of
the amplifier is backed off at least 6 dB away from its compression
point. With the implementation of the circuit, lower P1dB values
may be measured for a Class-AB amplifier, where the device will
attempt to source more drain current while the circuit tries to provide
a constant drain current. The circuit should be connected directly in
line with where the voltage supplies would be normally connected
with the amplifier circuit, as shown the diagram. Any required
matching circuitry remains the same, although it is not shown in the
diagram. This recommended active-bias constant-current circuit
adds 7 components to the parts count for implementation, but should
cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1,
R3, R4, R5, $0.024 for R2, and $0.0085 for C1).
Temperature compensation is achieved by tracking the voltage
variation with the temperature of the emitter-to-base junction of the
two PNP transistors. As a 1st order approximation, this is achieved
by using matched transistors with approximately the same Ibe
current. Thus the transistor emitter voltage adjusts the HFET gate
voltage so that the device draws a constant current, regardless of the
temperature. A Rohm dual transistor - UMT1N - is recommended
for cost, minimal board space requirements, and to minimize the
variation between the two transistors. Minimizing the variability
between the base-to-emitter junctions allow more accuracy in setting
the current draw. More details can be found in a separate application
note “Active-bias Constant-current Source Recommended for
HFETs” found on the WJ website.
M.N.
-Vgg
DUT
M.N.
HFET Application Circuit
Parameter
Pos Supply, Vdd
Neg Supply, Vgg
Vds
Ids
R1
R2
R3
R4
R5
FP2189
+8 V
-5 V
+7.75 V
250 mA
62 Ω
1.0 Ω
1.8 kΩ
1 kΩ
1 kΩ
*R2 should be of size 0805 to dissipate 0.0625 Watts.
This should be of 1% tolerance. Two 2.0 Ω resistors in
parallel of size 0603 can also be used.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 11 of 12
October 2006
FP2189
The Communications Edge TM
Product Information
1-Watt HFET
FP2189-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The FP2189-G will be marked with an
“FP21G” designator. An alphanumeric lot
code (“XXXX-X”) is also marked below the
part designator on the top surface of the
package. The obsolete tin-lead package is
marked with an “FP2189” designator
followed by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes ኑ500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes at 2000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tj (2)
-40 to +85 °C
35 °C/W
155 °C
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical drain biasing condition
of +8V, 250 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160 °C.
MTTF vs. GND Tab Temperature
100
M T T F (m illio n h rs )
Thermal Specifications
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
10
1
0
60
70
80
90
100 110
Tab Temperature (°C)
120
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 12 of 12
October 2006