AP9T18GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Capable of 2.5V gate drive BVDSS 20V RDS(ON) 14mΩ ID ▼ Surface mount package G 38A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D TO-251(J) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +16 V ID@TC=25℃ Continuous Drain Current, V GS @ 4.5V 38 A ID@TC=100℃ Continuous Drain Current, V GS @ 4.5V 24 A 140 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 4 ℃/W 110 ℃/W 1 200809123 AP9T18GH/J o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ 0.5 - 1.5 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=18A - 33 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=16V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=+16V - - +100 nA ID=18A - 16 25 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC 2 td(on) Turn-on Delay Time VDS=10V - 12 - ns tr Rise Time ID=18A - 80 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 22 - ns tf Fall Time RD=0.56Ω - 12 - ns Ciss Input Capacitance VGS=0V - 1115 1790 pF Coss Output Capacitance VDS=20V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 220 - pF Rg Gate Resistance f=1.0MHz - 1.54 - Ω Min. Typ. IS=18A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=18A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9T18GH/J 90 120 o o 5.0V 4.5V T C =25 C 100 5.0V 4.5V TC=150 C 80 ID , Drain Current (A) ID , Drain Current (A) 70 80 3.5V 60 40 2.5V 60 3.5V 50 40 30 2.5V 20 20 V G =1.5V 10 V G =1.5V 0 0 0 1 2 3 0 4 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.6 I D =18A V G =4.5V I D =9A o T C =25 C 1.4 Normalized RDS(ON) RDS(ON) (mΩ) 22 18 1.2 1.0 14 0.8 10 0.6 0 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 Normalized VGS(th) (V) IS(A) 8 6 T j =25 o C o T j =150 C 4 1.5 1 0.5 2 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9T18GH/J f=1.0MHz 10000 12 I D =18A V DS =10V V DS =12V V DS =16V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 1000 4 C oss C rss 2 0 100 0 5 10 15 20 25 30 35 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 ID (A) 100us 1ms 10 10ms 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 9T18GH LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E1 E A1 B2 F B1 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 9T18GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence 6