DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION Product Summary Features VDSS RDS(on) Qg Qgd ID -12V 12mΩ 4.9nC 1.1nC -7.6A LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile Qg = 4.9nC for Ultra-Fast Switching Typ. @ VGS = -4.5V, TA = +25°C Description st This 1 generation Lateral MOSFET (LD-MOS) is engineered to ESD = 3kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) minimize on-state losses and switch ultra-fast, making it ideal for high Halogen and Antimony Free. “Green” Device (Note 3) efficiency power transfer. Using Chip-Scale Package (CSP) to Qualified to AEC-Q101 Standards for High Reliability increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Mechanical Data Applications DC-DC Converters Battery Management Load Switch ESD PROTECTED TO 3kV Case: U-WLB1515-9 Terminal Connections: See Diagram Below G S S S S S D D D Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 3) Part Number DMP1018UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information EW = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M or M = Month (ex: 9 = September) EW YM Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMP1018UCB9 Document number: DS36149 Rev. 3 - 2 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D November 2014 © Diodes Incorporated DMP1018UCB9 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION Continuous Drain Current (Note 5) VGS = -4.5V Steady State Steady State Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%) Continuous Drain Current (Note 6) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -12 -6 -7.6 -6.0 ID Units V V A -5.5 -4.3 -60 ID IDM A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD PD RθJA RθJA TJ, TSTG Value 1.0 1.8 126.8 69 -55 to +150 Units W W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage @TC = +25°C Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1 -100 V μA nA VGS = 0V, ID = -250μA VDS = -9.6V, VGS = 0V VGS = -6.0V, VDS = 0V VGS(th) -0.4 — |Yfs| VSD Qrr trr — — — — -1.3 18 22 — -1 — — V RDS (ON) -0.8 12 15 5.5 -0.7 30.2 71.4 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2A VGS = -2.5V, ID = -2A VDS = -6V, ID = -2A VGS = 0V, IS = -2A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 457 272 120 21.23 4.9 0.6 1.1 4.45 12 100 93 — — — — — — — — — — — m S V nC ns pF pF pF Ω nC nC nC ns ns ns ns Test Condition Vdd = -5V, IF = -2A, di/dt = 200A/μs VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -6V, ID = -2A VDD = -6V, VGS = -4.5V, IDS = -2A, RG = 2Ω, 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz (0.071-mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1018UCB9 Document number: DS36149 Rev. 3 - 2 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP1018UCB9 20 10 VGS = -3.0V VGS = -2.5V VDS = -5.0V 8 VGS = -1.8V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 15 10 VGS = -1.5V 5 6 4 TA = 150C T A = 125C 2 TA = 85 C T A = 25C VGS = -1.2V 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3.0 0.025 0.020 VGS = -2.5V VGS = -4.5V 0.010 VGS = -6.0V 0.005 0 1 2 3 4 5 6 7 8 9 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V ID = -5A 1.5 1.3 VGS = -2.5V ID = -1A 1.1 0.9 0.7 0.5 -50 Document number: DS36149 Rev. 3 - 2 0.5 1.0 1.5 2.0 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics TA = 150C TA = 125C 0.015 TA = 85 C TA = 25 C 0.010 TA = -55C 0.005 0 0 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.030 0.025 VGS = -2.5V ID = -1A 0.020 0.015 VGS = -4.5V ID = -5A 0.010 0.005 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP1018UCB9 0 VGS = -4.5V 10 1.7 TA = -55 C 0.020 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.030 0.015 0 RDS(on), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION VGS = -2.0V 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2014 © Diodes Incorporated DMP1018UCB9 10 VGS(TH), GATE THRESHOLD VOLTAGE (V) -IS, SOURCE CURRENT (A) 1.2 1.0 0.8 -ID = 1mA 0.6 -ID = 250µA 0.4 8 TA= 25C 6 4 2 0.2 0 -50 0 10,000 100 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current -IGSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 1,000 Ciss C oss 100 10 Crss 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 10 TA = 150°C 1 TA = 125°C TA = 85°C 0.1 0.01 12 6 TA = 25°C T A = -55°C 2 3 4 5 6 -VGS, GATE-SOURCE VOLTAGE (V) Figure 10 Typical Gate-Source Leakage Current vs. Voltage 1 100 5 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION 1.4 VDS = -6V ID = -2A 4 3 2 10 1 0.1 1 0 0.01 0 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP1018UCB9 Document number: DS36149 Rev. 3 - 2 8 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 4 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP1018UCB9 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * RJA D = 0.005 RJA = 70°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D 6X-Ø b PIN ID e E e e A3 A2 e U-WLB1515-9 Dim Min Max Typ A 0.62 A2 0.36 0.36 A3 0.020 0.030 0.025 b 0.27 0.37 0.32 D 1.47 1.51 1.49 E 1.47 1.51 1.49 e 0.50 All Dimensions in mm A SEATING PLANE Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D Dimensions C1 C C1 C2 D C C Value (in mm) 0.50 1.00 1.00 0.25 C2 DMP1018UCB9 Document number: DS36149 Rev. 3 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP1018UCB9 IMPORTANT NOTICE NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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