1,550nm Modulator Integrated DFB Laser FLD5F20NP-D FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Available at C Band ITU-T grid wavelengths between 1529.55 - 1563.05nm • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection • Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler APPLICATION This MI laser is intended for intermediate reach applications (≤40km) at 10Gb/s. DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified) Rating Parameter Symbol Condition Operating Case Temperature Top Storage Temperature Unit Min. Max. - -20 +70 Tstg - -40 +85 °C °C Optical Output Power Pf CW - 5 mW Laser Forward Current IF CW - 150 mA Laser Reverse Voltage VR CW - 2 V Modulator Forward Voltage Vm CW -5 +1 V Photodiode Forward Current - - - 1 mA Photodiode Reverse Voltage VDR - - 10 V Cooling Heating Cooling Heating -2.5 -0.9 +2.5 +1.4 - Tth ATC Operation -20 +70 °C - 260°C - 10 sec TEC Voltage Vc TEC Current Ic Thermistor Temperature Lead Soldering Time Edition 1.3 July 2004 1 V A 1,550nm Modulator Integrated DFB Laser FLD5F20NP-D OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise specified) Parameter Limits Type Max. Note (4) Symbol Test Condition Note (2) Threshold Current λp Ith CW, Vm=Vo - - 30 mA Operating Current Iop - 40 - 100 mA Forward Voltage VF CW, IF=Iop, Vm=Vo - 1.4 2.0 V Optical Output Power (Avg. Power) Pf Note (2) -2.0 - - dBm Dispersion Penalty dP Note (1) - - 2 dB Sidemode Suppression Ratio SSR Note (2) 35 - - dB Laser Set Temperature (BOL) Tset 15 - 35 °C Wavelength Drift (after 20 years) - -0.1 - 0.1 nm Wavelength Stability with Case Temperature - - - ±0.5 pm/°C Optical Isolation Is Tc=-20 to +70°C 25 35 - dB On Level Modulation Vo - -0.7 - 0 V Vmod (Vo-Vmod)≥-3.3V, Rext=10dB f=10Gb/s, IF=Iop, Vm=Vo/(Vo-Vmod) - - 2.6 V 10 - - dB - 20 20 25 25 ps ps 10 - - GHz 8 - - dB 5 - - dB 0.04 - 1.5 mA - - ±1.0 dB Peak Wavelength Modulator Drive Voltage Extinction Ratio Rise Time Fall Time Rext Tr Tf Note (2), 20 to 80% -3dB bandwidth, Vm=Vo-0.5|Vmod|, IF=Iop f=DC-5GHz, 50Ω Test Set, Vm=Vo, IF=Iop f=5-10GHz, 50Ω Test Set, Vm=Vo, IF=Iop Min. Unit Cut-off Frequency S21 RF Return Loss S11 RF Return Loss S11 Monitor Current Im In-Band Ripple ∆G Relative Intensity Noise RIN f=10 MHz to 8.5 GHz, Vm=Vo, IF=Iop, 8% Reflection - - -120 dB/Hz TEC Capacity ∆T PTEC=3.3W, IF=Iop 70-Tset - - °C TEC Current Ic IF=Iop, ∆T=(70-Tset)[°C] - - 1.3 A TEC Voltage Vc IF=Iop, ∆T=(70-Tset)[°C] - - 2.5 V TEC Power Dissipation Pc IF=Iop - - 3.3 W Thermistor B Constant (Note 3) Thermal Resistance B Rth TL=25°C , Tc=+25°C 3,270 9.5 3,450 10.0 3,630 10.5 K kΩ Note (2), VDR=5V IF=Iop, f=0.1-10GHz, Vm=Vo-0.5|Vmod| Note (1) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=800ps/nm, Dispersion penalty at Bit Error Rate = 1.0E-10 Note (3) Relation between resistance and temperature (°K) is: Rth (T) = Rth (25°C)*exp[B(1/T-1/298)] Note (4) Reference Figure 7 for Wavelength Table Note (2) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) 2 1,550nm Modulator Integrated DFB Laser FLD5F20NP-D Relative Intensity (10 dB/div.) Fig. 1 Lasing Spectrum 10Gb/s PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) Wavelength (Span=1 nm/div, Res.=0.1nm) Output Power, Pf (mW) 4 1.0 Vo=-0.3V TLD=25°C 3 0.75 Pf Im 2 0.25 1 0 0.5 0 20 40 60 80 Forward Current, IF (mA) 3 0 100 Monitor Current, Im (mA) Fig. 2 Output Power & Monitor Current vs. Forward Current 1,550nm Modulator Integrated DFB Laser FLD5F20NP-D Fig. 3 Extinction Ratio vs. Modulation Applied Voltage Fig. 4 Cut-off Frequency (S21) Relative Output (dB) -5 -10 -15 12 9 6 3 0 -3 -6 -9 -12 0 -20 0 0.5 1.0 1.5 2.0 5 2.5 10 15 20 Frequency, f (GHz) Modulation Applied Voltage (V) Fig. 6 Transmission Characteristics Fig. 5 RF Return Loss (S11) 0 10-4 9.95328Gb/s PRBS=223-1 0 km 800ps/nm -10 Bit Error Rate Return Loss (dB) Extinction Ratio (dB) 0 -20 10-6 10-8 10-10 -30 0 5 10 15 20 10-12 Frequency, f (GHz) -15 -10 Average Received Optical Power (dBm) 4 1,550nm Modulator Integrated DFB Laser FLD5F20NP-D Figure 7 Wavelength Table Part Number Wavelength (nm) (TL=Tset) (in vacuum) Frequency (THz) FLD5F20NP-D60 FLD5F20NP-D59 FLD5F20NP-D58 FLD5F20NP-D57 FLD5F20NP-D56 FLD5F20NP-D55 FLD5F20NP-D54 FLD5F20NP-D53 FLD5F20NP-D52 FLD5F20NP-D51 FLD5F20NP-D50 FLD5F20NP-D49 FLD5F20NP-D48 FLD5F20NP-D47 FLD5F20NP-D46 FLD5F20NP-D45 FLD5F20NP-D44 FLD5F20NP-D43 FLD5F20NP-D42 FLD5F20NP-D41 FLD5F20NP-D40 FLD5F20NP-D39 FLD5F20NP-D38 FLD5F20NP-D37 FLD5F20NP-D36 FLD5F20NP-D35 FLD5F20NP-D34 FLD5F20NP-D33 FLD5F20NP-D32 FLD5F20NP-D31 FLD5F20NP-D30 FLD5F20NP-D29 FLD5F20NP-D28 FLD5F20NP-D27 FLD5F20NP-D26 FLD5F20NP-D25 FLD5F20NP-D24 FLD5F20NP-D23 FLD5F20NP-D22 FLD5F20NP-D21 FLD5F20NP-D20 FLD5F20NP-D19 FLD5F20NP-D18 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 1544.53 1545.32 1546.12 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.56 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 196.00 195.90 195.80 195.70 195.60 195.50 195.40 195.30 195.20 195.10 195.00 194.90 194.80 194.70 194.60 194.50 194.40 194.30 194.20 194.10 194.00 193.90 193.80 193.70 193.60 193.50 193.40 193.30 193.20 193.10 193.00 192.90 192.80 192.70 192.60 192.50 192.40 192.30 192.20 192.10 192.00 191.90 191.80 5 Tolerance (nm) ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 1,550nm Modulator Integrated DFB Laser FLD5F20NP-D “NP” PACKAGE UNIT: mm 17.24±0.25 15.24±0.25 7-0.5 2.54±0.20 PIN 7 8.17±0.25 7-0.15±0.05 5.41±0.25 7 4.83±0.20 ø0.9±0.1 1.25 8.89±0.15 12.7±0.25 8.25±0.20 ø5.2±0.25 PIN 1 6 TOP VIEW 5 4 3 TEC 2 1 TH 10KΩ 50Ω 4-ø2.67±0.2 ø4.16 5.08±0.25 10.0±0.25 8 20.83±0.25 22.00±0.25 26.04±0.25 29.97±0.25 *L 25.0±0.5 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 Thermistor Thermistor LD Anode Power Monitor Anode Power Monitor Cathode Thermoelectirc Cooler (+) Thermoelectric Cooler (-) Modulator Anode (-) Case Ground: LD Cathode 0.5±0.2 PIN 8 5.47±0.2 * Pigtail length (L) and connector type are specified in the detail (individual) specification. CONNECTOR For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6