HSMC HM669A Npn epitaxial planar transistor Datasheet

HI-SINCERITY
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 1/4
MICROELECTRONICS CORP.
HM669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HM649A
SOT-89
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ....................................................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 160 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current (DC) ................................................................................................................................... 1.5 A
IC Collector Current (Pulse) ................................................................................................................................... 3 A
Thermal Characteristic
Symbol
Characteristic
Max.
o
Unit
Rθja
Thermal Resistance, junction to ambient (TA=25 C)
125
o
Rθjc
Thermal Resistance, junction to case (TC=25oC)
12.5
o
C/W
C/W
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
BVCBO
180
-
-
V
IC=1mA, IE=0
BVCEO
160
-
-
V
IC=10mA, IB=0
BVEBO
5
-
-
V
IE=1mA, IC=0
ICBO
-
-
10
uA
VCB=160V, IE=0
*VCE(sat)
-
-
1
V
IC=500mA, IB=50mA
VBE(on)
-
-
1.5
V
IC=150mA, VCE=5V
*hFE1
100
-
320
IC=150mA, VCE=5V
*hFE2
30
-
-
IC=500mA, VCE=5V
fT
-
140
-
MHz
Test Conditions
IC=150mA , VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
C
D
Range
100-200
180-320
HM669A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Saturation Voltage & Collector Current
Current Gain & Collector Current
1000
1000
Saturation Voltage (mV)
VCE(s at) @ IC=10IB
o
hFE
125 C
o
25 C
100
o
75 C
hFE @ VCE=5V
o
125 C
o
75 C
100
o
25 C
10
10
1
10
100
1000
10000
10
100
Collector Current-IC (mA)
1000
10000
Collector Current-IC (mA)
Saturation Voltage & Collector Current
ON Voltage & Collector Current
1000
1000
o
25 C
o
25 C
o
125 C
Saturation Voltage (mV)
o
o
75 C
ON Voltage (mV)
75 C
VBE(sat) @ IC=10IB
100
o
125 C
VBE(ON) @ VCE=5V
100
1
10
100
1000
10000
Collector Current-IC (mA)
1
10
100
1000
10000
Collector Current-IC (mA)
Safe Operating Area
10
Collector Current-IC (A)
PT=1mS
1
PT=100mS
PT=1S
0.1
0.01
1
HM669A
10
100
Forward Voltage (V)
1000
HSMC Product Specification
HI-SINCERITY
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 3/4
MICROELECTRONICS CORP.
SOT-89 Dimension
C
DIM
A
B
C
D
E
F
G
H
I
Marking:
H
Date Code
Control Code
Pb Free Mark
H 6 6 9 A
D
B
1
2
Pb-Free: " " (Note)
Normal: None
3
Note: Green label is used for pb-free packing
E
J
F
G
A
I
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Min.
4.40
4.05
1.50
2.40
0.36
*1.50
*3.00
1.40
0.35
Max.
4.60
4.25
1.70
2.60
0.51
1.60
0.41
*: Typical, Unit: mm
3-Lead SOT-89 Plastic
Surface Mounted Package
HSMC Package Code: M
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HM669A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HM669A
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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