BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PTOT Power Dissipation TJ Junction Temperature TS Value BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 @ TC = 25° Storage Temperature Unit 80 125 120 160 V V 10 V 25 A 6 A BDY57 BDY58 175 Watts BDY57 BDY58 -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY57 BDY58 COMSET SEMICONDUCTORS Value Unit 1 °C/W 1/3 BDY57 – BDY58 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 BDY57 BDY58 80 125 - - V VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=1.0 A BDY57 BDY58 - 0.5 1.4 V BDY57 120 - - V(BR)CBO Collector-Base Breakdown Voltage (*) IC=5.0mA, IE=0 BDY58 160 - - V(BR)EBO Emitter-Base Breakdown Voltage (*) IE=5.0 A, IC=0 BDY57 BDY58 - 0.5 1.4 ICBO Collector-Base Cutoff Current VCB=120 V IE=0 V BDY57 BDY58 - 0.5 ICER Collector-Emitter Cutoff Current VCE=80 V RBE=10 Ω TCASE=100°C BDY57 BDY58 - - 10 mA IEBO Emitter-Base Cutoff Current I EB C=0 V V =10 V BDY57 BDY58 - 0.25 0.5 mA 20 - 60 - 15 - 10 - - VCE=4 V, IC=10 A, TCASE=30°C BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 VCE=4 V, IC=10 A h21E Static Forward Current transfer ratio (*) V VCE=4 V, IC=20 A V 1.0 mA 0.5 V fT Transition Frequency VCE=15 V, IC=1.0 A, f=10 MHz BDY57 BDY58 10 30 - MHz td + tr Turn-on time IC=15 A, IB=1.5 A BDY57 BDY58 - 0.25 1 µs COMSET SEMICONDUCTORS 2/3 BDY57 – BDY58 Symbol ts + tf Ratings Test Condition(s) IC=15 A, IB1=1.5 A, IB2=-1.5 A Turn-off time BDY57 BDY58 Min Typ Mx Unit - 1 2 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 3/3 µs