Eudyna FLC107WG C-band power gaas fet Datasheet

FLC107WG
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
7.5
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Limit
Typ. Max.
Unit
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
VDS = 5V, VGS = 0V
-
400
600
mA
Transconductance
gm
VDS = 5V, IDS = 250mA
-
200
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 20mA
-1.0
-2.0
-3.5
V
-5
-
-
V
28.5
30.0
-
dBm
7.0
8.0
-
dB
-
36
-
%
-
16
20
°C/W
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Thermal Resistance
Rth
IGS = -20µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8 GHz
Channel to Case
CASE STYLE: WG
Edition 1.1
July 1999
G.C.P.: Gain Compression Point
1
FLC107WG
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
500
6
4
VGS =0V
400
Drain Current (mA)
8
-0.5V
300
-1.0V
200
-1.5V
100
2
-2.0V
50
100
150
0
200
2
50
Pout
6 GHz
23
21
P1dB (dBm)
8 GHz
25
10
f=8GHz
IDS ≈ 0.6 IDSS
6 GHz
8 GHz
ηadd
40
30
20
ηadd (%)
27
8
P1dB & ηadd vs. VDS
OUTPUT POWER vs. INPUT POWER
29
6
Drain-Source Voltage (V)
Case Temperature (°C)
VDS=10V
31 IDS ≈ 0.6 IDSS
4
50
31
P1dB
30
40
ηadd
30
29
10
19
8
12 14 16 18 20 22
9
10
Drain-Source Voltage (V)
Input Power (dBm)
2
ηadd (%)
0
Output Power (dBm)
Total Power Dissipation (W)
10
FLC107WG
C-Band Power GaAs FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
2GHz
10
9
8
+j250
7
+j10
3
6
5 10
10
4
3
-j10
25
50Ω
100
180°
250
9
2GHz
4
3
2
1
SCALE FOR |S21|
8
7
.02
SCALE FOR |S12|
0
2GHz
6
5
-j250
4 3
-j25
-j100
-j50
4
5
6
2GHz
7 3
9 4
10
9
7
10
0°
.04
.06
.08
-90°
S11
S-PARAMETERS
VDS = 10V, IDS = 250mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
500
.945
-80.8
10.188
131.0
.024
1000
.912
-121.7
6.711
103.4
2000
.901
-154.5
3.629
3000
.897
-168.3
4000
.894
5000
S22
MAG
ANG
44.6
.260
-61.5
.031
21.6
.277
-91.4
73.4
.033
.3
.368
-114.0
2.404
54.1
.031
-10.1
.469
-124.2
-176.5
1.817
38.7
.029
-14.0
.548
-131.8
.890
174.8
1.494
24.1
.029
-16.6
.601
-139.3
6000
.884
164.2
1.288
8.7
.029
-17.9
.640
-148.9
7000
.871
152.7
1.117
-7.3
.030
-22.5
.676
-160.1
8000
.851
143.1
.968
-21.1
.030
-15.8
.708
-168.9
9000
.841
135.2
.875
-32.8
.034
-12.8
.737
-175.2
10000
.831
126.5
.854
-44.2
.044
-10.3
.759
179.6
Download S-Parameters, click here
3
FLC107WG
C-Band Power GaAs FET
2-Ø1.6±0.01
(0.063)
1.0 Min.
(0.039)
Case Style "WG"
Metal-Ceramic Hermetic Package
2.8
(0.11)
0.1±0.05
(0.004)
2
2.5±0.15
(0.098)
1
3
0.03
8.5±0.2
(0.335)
0.6
0.8±0.1
(0.031)
1.0 Min.
(0.039)
0.5
(0.020)
6.1±0.1
(0.240)
2.5 Max.
(0.098)
1.
2.
3.
4.
Gate
Source
Drain
Source
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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