DMTH6010LPS Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI ADVANCED INFORMATION Product Summary Features BVDSS RDS(ON) 60V 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID TC = +25°C (Note 8) 100A 85A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. Mechanical Data Applications Rated to +175°C – Ideal for High Ambient Temperature Environments High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6010LPSQ) Notebook Battery Power Management DC-DC Converters Load Switch ® Case: POWERDI 5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) ® POWERDI 5060-8 Pin1 Top View Bottom View S D S D S D G D Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMTH6010LPS-13 Notes: Case ® POWERDI 5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D =Manufacturer’s Marking H6010LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 14 = 2014) WW = Week Code (01 to 53) H6010LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMTH6010LPS Document number: DS37354 Rev. 5 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6010LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C (Note 8) TC = +100°C ADVANCED INFORMATION Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Value 60 ±20 13.5 10.4 ID A 100 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Unit V V A IS IDM IAS EAS 75 100 140 20 20 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.6 57 136 1.1 -55 to +175 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — 5.4 8.3 0.8 3 8 12 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — 0.2 — — — — — — — — — — 2,090 746 38.5 0.59 19.3 41.3 6 8.8 5.7 4.3 23.4 9.7 35.4 38.2 — — — 1.5 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω ns nC IF = 20A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMTH6010LPS Document number: DS37354 Rev. 5 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6010LPS 30 30.0 VGS=3.5V 25 ID, DRAIN CURRENT (A) VGS=3.0V VGS=4.5V 15.0 VGS=10V 10.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS=4.5V 0.008 0.007 VGS=10V 0.006 0.005 0.004 2 1.6 1.2 VGS=10V, ID=10A 0.8 VGS=5V, ID=5A 0.4 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 0.02 VGS= 4.5V 0.018 150℃ 0.016 125℃ 175℃ 0.014 0.012 85℃ 0.01 25℃ 0.008 -55℃ 0.006 0.004 0.002 0 20 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25℃ 0 5 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 85℃ 150℃ -55℃ 0.009 2 125℃ 10 0 0.01 0 15 175℃ VGS=2.2V 0.0 20 5 VGS=2.5V 5.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) VDS= 5V VGS=4.0V 20.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION 25.0 5 0.02 0.018 0.016 0.014 0.012 VGS=5V, ID=5A 0.01 0.008 0.006 VGS=10V, ID=10A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature DMTH6010LPS Document number: DS37354 Rev. 5 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature November 2015 © Diodes Incorporated DMTH6010LPS 30 1.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.8 ID=1mA 1.4 1.2 1 ID=250μA 0.8 0.6 25 VGS=0V, TJ=125℃ 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=175℃ VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 0.4 VGS=0V, TJ=-55℃ 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. junction Temperature 175 0 10000 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 1.5 10 f=1MHz 9 Ciss 8 Coss 1000 7 VDS=30V, ID=20A 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) 100 Crss 5 4 3 10 2 1 0 1 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 40 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 10. Gate Charge 40 45 1000 PW = 10µs R DS(on) Limited PW = 1µs 100 I D, DRAIN CURRENT (A) ADVANCED INFORMATION 2 PW = 1s 10 PW = 100ms PW = 10ms 1 PW = 1ms T J (m ax ) = 175°C 0.1 PW = 100µs T C = 25°C V GS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMTH6010LPS Document number: DS37354 Rev. 5 - 2 100 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6010LPS ADVANCED INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=1.05℃ /W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 DMTH6010LPS Document number: DS37354 Rev. 5 - 2 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 November 2015 © Diodes Incorporated DMTH6010LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ® ADVANCED INFORMATION POWERDI 5060-8 ® D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI 5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10º 12º 11º θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ® POWERDI 5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH6010LPS Document number: DS37354 Rev. 5 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 November 2015 © Diodes Incorporated DMTH6010LPS IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMTH6010LPS Document number: DS37354 Rev. 5 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated