NPC CF5010EA1-1 Crystal oscillator module ic Datasheet

SM5010 series
Crystal Oscillator Module ICs
OVERVIEW
The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits,
employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the
need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for
design and application optimization.
FEATURES
■
7 types of oscillation circuit structure
For fundamental oscillator
• 5010A×× :Simple structure with low frequency variation
• 5010B×× :Low crystal current type with RD built-in
oscillation circuit
• 5010CL× :Oscillation stop function built-in
• 5010DN× :External capacitors, CG and CD required
• 5010EA× :Low current consumption type
For 3rd overtone oscillator
• 5010F×× :Suitable for round blank
• 5010H×× :External resistor, Rf required
■
■
■
■
■
■
■
■
■
2.7 to 5.5V operating supply voltage
Capacitors CG, CD built-in
Inverter amplifier feedback resistor built-in
Output duty level
• TTL level: AK×, BK×, HK×
• CMOS level: AN×, AH×, BN×, BH×, CL×, DN×,
EA×, FN×, FH×, HN×
Oscillator frequency output (fO, fO/2, fO/4, fO/8, fO/16
determined by internal connection)
Standby function
Pull-up resistor built-in
8-pin SOP (SM5010×××S)
Chip form (CF5010×××)
SERIES CONFIGURATION
For Fundamental Oscillator
Version1
CF5010AN1
CF5010AN2
CF5010AN3
CF5010AN4
CF5010AK1
CF5010AH1
CF5010AH2
CF5010AH3
CF5010AH4
CF5010BN1
CF5010BN2
CF5010BN3
CF5010BN4
CF5010BN5
CF5010BK1
CF5010BH1
CF5010BH2
CF5010BH3
CF5010BH4
CF5010CL1
CF5010CL2
CF5010CL3
CF5010CL4
CF5010CL5
CF5010DN1
CF5010EA1
CF5010EA2
Operating
supply
voltage range
[V]
Built-in
capacitance
CG
CD
[pF]
[pF]
RD
[Ω]
Output
current
Output duty
(VDD = 5V)
level
[mA]
CMOS
2.7 to 5.5
29
29
–
16
4.5 to 5.5
29
29
–
16
TTL
2.7 to 5.5
29
29
–
4
CMOS
CMOS/TTL
CMOS
2.7 to 5.5
22
22
820
16
4.5 to 5.5
22
22
820
16
TTL
2.7 to 5.5
22
22
820
4
CMOS
2.7 to 5.5
18
18
–
16
CMOS
2.7 to 5.5
–
–
820
16
CMOS
2.7 to 5.5
10
15
820
4
CMOS
CMOS/TTL
Output
frequency
fO
fO/2
fO/4
fO/8
fO
fO
fO/2
fO/4
fO/8
fO
fO/2
fO/4
fO/8
fO/16
fO
fO
fO/2
fO/4
fO/8
fO
fO/2
fO/4
fO/8
fO/16
fO
fO
fO/2
INHN input
level
(VDD = 5V)
Standby mode
Oscillator
stop function
Output state
TTL
No
High impedance
TTL
No
High impedance
TTL
No
High impedance
TTL
No
High impedance
TTL
No
High impedance
TTL
No
High impedance
CMOS
Yes
High impedance
TTL
No
High impedance
TTL
Yes
LOW
1. Package devices have designation SM5010×××S.
SEIKO NPC CORPORATION —1
SM5010 series
SERIES CONFIGURATION
For 3rd Overtone Oscillator
Operating
supply voltage
range [V]
Version
Built-in capacitance
gm ratio
CG [pF]
CF5010FNA
CF5010FNC
2.7 to 5.5
CF5010FND
CF5010FNE
1.00
CD [pF]
Rf
[kΩ]
13
15
4.2
11
17
3.1
13
17
2.2
8
15
2.2
4.5 to 5.5
CF5010FHA
13
15
4.2
CF5010FHC
11
17
3.1
13
17
2.2
8
15
2.2
4.5 to 5.5
CF5010FHD
1.00
CF5010FHE
Output current
(VDD = 5V)
[mA]
Output duty
level
16
CMOS
4
CMOS
CF5010HN1
4.5 to 5.5
1.17
13
17
200
16
CMOS
CF5010HK1
4.5 to 5.5
1.17
13
17
200
16
TTL
ORDERING INFORMATION
Device
Package
SM5010×××S
8-pin SOP
CF5010×××–1
Chip form
PACKAGE DIMENSIONS
(Unit: mm)
• 8-pin SOP
0.4 0.2
6.2 0.3
4.4 0.2
0.15 + 0.1
− 0.05
0.695typ
1.5
0.1
0.05 0.05
5.2 0.3
1.27
0 to 10
0.10
0.4 0.1
0.12 M
SEIKO NPC CORPORATION —2
SM5010 series
PAD LAYOUT
PINOUT
(Unit: µm)
(Top view)
VDD
Q
(920,1180)
HA5010
Y
(0,0) INHN XT XTN VSS
INHN
1
8
VDD
XT
2
7
NC
XTN
3
6
NC
VSS
4
5
Q
X
Chip size: 0.92 × 1.18mm
Chip thickness: 300 ± 30µm
Chip base: VDD level
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [µm]
Number
Name
I/O
Description
X
Y
1
INHN
I
Output state control input. Standby mode when LOW, pull-up resistor built in. In
the case of the 5010CL×, the oscillator stops and Power-saving pull-up resistor is
built-in to reduce current consumption at standby mode.
195
174.4
2
XT
I
Amplifier input.
385
174.4
3
XTN
O
Amplifier output.
575
174.4
4
VSS
–
Ground
765
174.4
5
Q
O
Output. Output frequency (fO, fO/2, fO/4, fO/8, fO/16) determined by internal
connection
757.6
1017.6
6
NC
–
No connection
–
–
7
NC
–
No connection
–
–
8
VDD
–
Supply voltage
165.4
1014.6
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XTN
SEIKO NPC CORPORATION —3
SM5010 series
BLOCK DIAGRAM
For Fundamental Oscillator
■
5010A××, B××, CL×, DN×, EA× series
VDD VSS
XTN
CG
Rf
CD
RD
XT
1/2
1/2
1/2
1/2
Q
INHN
For 3rd Overtone Oscillator
■
5010F××, H×× series
VDD VSS
XTN
CG
XT
Rf
CD
Q
INHN
SEIKO NPC CORPORATION —4
SM5010 series
FUNCTIONAL DESCRIPTION
Standby Function
5010AH×, AK×, AN×, BH×, BK×, BN×, DN×, FN×, FH×, HN×, HK× series
When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
5010CL× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
5010EA× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW.
Version
INHN
Q
Oscillator
AH×, AK×, AN×, BH×,
BK×, BN×, DN×, FH×,
FH×, HN×, HK× series
HIGH (or open)
Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency
Normal operation
LOW
High impedance
Normal operation
HIGH (or open)
Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency
Normal operation
LOW
High impedance
Stopped
HIGH (or open)
Either fO or fO/2 output frequency
Normal operation
LOW
LOW
Stopped
CL× series
EA× series
Power-saving Pull-up Resistor (CL series only)
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
SEIKO NPC CORPORATION —5
SM5010 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter
Symbol
Condition
Rating
Unit
Supply voltage range
VDD
−0.5 to +7.0
V
Input voltage range
VIN
−0.5 to VDD + 0.5
V
Output voltage range
VOUT
−0.5 to VDD + 0.5
V
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
Tstg
Output current
Power dissipation
Chip form
−65 to +150
8-pin SOP
−55 to +125
°C
AH×, BH×, FH×, EA×
10
IOUT
AN×, AK×, BN×, BK×, CL×, DN×,
FN×, HN×, HK×
25
PD
8-pin SOP
500
mW
Rating
Unit
mA
Recommended Operating Conditions
3V operation
VSS = 0V
Parameter
Symbol
Version
Condition
Operating supply voltage
VDD
All version
2.7 to 3.6
V
Input voltage
VIN
All version
VSS to VDD
V
5010AN×
5010AH×
−10 to +70
5010BN×
5010BH×
Operating temperature
TOPR
−20 to +80
5010CL×
°C
5010DN1
−10 to +70
5010EA×
5010FN×
5010AN×
2 to 30
5010AH×
2 to 16
5010BN×
2 to 30
5010BH×
Operating frequency
f
5010CL×
5010DN1
CL ≤ 15pF
2 to 16
MHz
2 to 30
5010EA×
5010FN×
22 to 40
SEIKO NPC CORPORATION —6
SM5010 series
5V operation
VSS = 0V
Parameter
Symbol
Version
Operating supply voltage
VDD
Input voltage
VIN
Condition
Rating
Unit
All version
4.5 to 5.5
V
All version
VSS to VDD
V
5010AN×
5010AK×
5010AH×
5010BN×
−40 to +85
5010BK×
5010BH×
5010CL×
5010DN1
Operating temperature
TOPR
5010EA×
5010FN×
5010FH×
CL ≤ 15pF, f = 2 to 40MHz
−10 to +70
CL ≤ 50pF, 30MHz ≤ f ≤ 50MHz
−20 to +80
CL ≤ 15pF, 50MHz ≤ f ≤ 70MHz
−15 to +75
CL ≤ 15pF, 30MHz ≤ f ≤ 50MHz
−20 to +80
CL ≤ 15pF, 50MHz ≤ f ≤ 60MHz
−15 to +75
5010HN1
−40 to +85
5010HK1
5010AN×
5010AK×
5010AH×
5010BN×
5010BK×
5010BH×
5010CL×
Operating frequency
f
5010DN1
5010EA×
5010FN×
5010FH×
°C
CL ≤ 15pF, f = 2 to 30MHz
CL ≤ 50pF
CL ≤ 15pF
CL ≤ 50pF
2 to 30
CL ≤ 15pF
CL ≤ 50pF
MHz
CL ≤ 15pF, Ta = − 40 to + 85°C
2 to 40
CL ≤ 50pF, Ta = − 20 to + 80°C
30 to 50
CL ≤ 15pF, Ta = − 15 to + 75°C
50 to 70
CL ≤ 15pF, Ta = − 20 to + 80°C
30 to 50
CL ≤ 15pF, Ta = − 15 to + 75°C
50 to 60
5010HN1
CL ≤ 50pF
5010HK1
CL ≤ 15pF
22 to 50
SEIKO NPC CORPORATION —7
SM5010 series
Electrical Characteristics
5010AN×, BN×, DN× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
Unit
min
typ
max
2.1
2.4
–
V
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.5
V
Output leakage current
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
VOH = VDD
–
–
10
VOL = VSS
–
–
10
Current consumption
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010×N1
–
5
10
5010×N2
–
3.5
7
5010×N3
–
2.5
5
5010×N4
–
2
4
5010×N5
–
2
4
µA
mA
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
5010B××
690
820
940
Ω
5010A××
26
29
32
5010B××
20
22
24
5010A××
26
29
32
5010B××
20
22
24
INHN pull-up resistance
CG
Built-in capacitance
Design value. A monitor pattern on a
wafer is tested.
CD
pF
5010AN×, AK×, BN×, BK×, DN× series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
HIGH-level input voltage
VIH
INHN
LOW-level input voltage
VIL
INHN
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
Output leakage current
Current consumption
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 50pF, f = 30MHz
Measurement cct 3, load cct 2,
INHN = open, CL = 15pF, f = 30MHz
INHN pull-up resistance
Unit
min
typ
max
3.9
4.2
–
V
–
0.3
0.4
V
2.0
–
–
V
V
–
–
0.8
VOH = VDD
–
–
10
VOL = VSS
–
–
10
5010×N1
–
15
30
5010×N2
–
9
18
5010×N3
–
6
12
5010×N4
–
5
10
5010×N5
–
5
10
5010×K1
–
10
20
µA
mA
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
5010B××
690
820
940
Ω
5010A××
26
29
32
5010B××
20
22
24
5010A××
26
29
32
5010B××
20
22
24
CG
Built-in capacitance
CD
Design value. A monitor pattern on a
wafer is tested.
pF
SEIKO NPC CORPORATION —8
SM5010 series
5010AH×, BH× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA
2.1
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA
–
0.3
0.5
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
V
Output leakage current
Current consumption
IZ
IDD
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 16MHz
–
–
0.5
VOH = VDD
–
–
10
VOL = VSS
–
–
10
5010×H1
–
3
6
µA
5010×H2
–
2
4
5010×H3
–
1.5
3
5010×H4
–
1.5
2.5
mA
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
5010B××
690
820
940
Ω
5010A××
26
29
32
5010B××
20
22
24
5010A××
26
29
32
5010B××
20
22
24
INHN pull-up resistance
CG
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
CD
pF
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA
3.9
4.2
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA
–
0.3
0.5
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.8
V
VOH = VDD
–
10
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
–
Output leakage current
VOL = VSS
–
–
10
5010×H1
–
9
18
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010×H2
–
6
12
5010×H3
–
5
10
5010×H4
–
4
8
Current consumption
IDD
µA
mA
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
5010B××
690
820
940
Ω
5010A××
26
29
32
5010B××
20
22
24
5010A××
26
29
32
5010B××
20
22
24
INHN pull-up resistance
CG
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
CD
pF
SEIKO NPC CORPORATION —9
SM5010 series
5010CL× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
2.2
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
VOH = VDD
–
10
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
–
Output leakage current
VOL = VSS
–
–
10
5010CL1
–
5
10
5010CL2
–
3.5
7
5010CL3
–
2.5
5
5010CL4
–
2
4
5010CL5
–
2
4
–
–
5
µA
2
4
15
MΩ
40
100
250
kΩ
80
200
500
kΩ
16
18
20
16
18
20
Current consumption
Standby current
INHN pull-up resistance
IDD
IST
RUP1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
Measurement cct 6, INHN = LOW
Built-in capacitance
Rf
CG
mA
Measurement cct 4
RUP2
Feedback resistance
µA
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
CD
pF
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
4.0
4.2
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
VOH = VDD
–
10
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
–
Output leakage current
VOL = VSS
–
–
10
5010CL1
–
15
30
5010CL2
–
9
18
5010CL3
–
6
12
5010CL4
–
5
10
5010CL5
–
5
10
–
–
10
µA
1
2
8
MΩ
40
100
250
kΩ
80
200
500
kΩ
16
18
20
16
18
20
Current consumption
Standby current
INHN pull-up resistance
IDD
IST
RUP1
Measurement cct 3, load cct 1,
INHN = open, CL = 50pF, f = 30MHz
Measurement cct 6, INHN = LOW
Built-in capacitance
Rf
CG
CD
mA
Measurement cct 4
RUP2
Feedback resistance
µA
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
pF
SEIKO NPC CORPORATION —10
SM5010 series
5010EA× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA
2.1
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA
–
0.3
0.5
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.5
V
–
4
8
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
Current consumption
5010EA2
–
2.5
5
INHN pull-up resistance
mA
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
690
820
940
Ω
9
10
11
13
15
17
Built-in capacitance
CG
Design value. A monitor pattern on a wafer is tested.
CD
pF
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA
3.9
4.2
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.8
V
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
–
6
12
IDD1
5010EA2
–
5
10
5010EA1
–
9
18
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 40MHz
5010EA2
–
6
12
RUP2
Measurement cct 4
40
100
250
kΩ
Feedback resistance
Rf
Measurement cct 5
80
200
500
kΩ
Oscillator amplifier output
resistance
RD
Design value
690
820
940
Ω
9
10
11
13
15
17
mA
Current consumption
INHN pull-up resistance
Built-in capacitance
CG
CD
Design value. A monitor pattern on a wafer is tested.
pF
SEIKO NPC CORPORATION —11
SM5010 series
5010FN× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
2.2
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.5
V
VOH = VDD
–
10
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
–
Output leakage current
VOL = VSS
–
–
10
5010FNA, FNC
f = 30MHz
–
8
16
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
5010FND
f = 40MHz
–
10
20
40
100
250
5010FNA
3.57
4.2
4.83
5010FNC
2.63
3.1
3.57
5010FND
1.87
2.2
2.53
5010FNA
11.7
13
14.3
5010FNC
9.9
11
12.1
5010FND
11.7
13
14.3
5010FNA
13.5
15
16.5
5010FNC
15.3
17
18.7
5010FND
15.3
17
18.7
Current consumption
INHN pull-up resistance
Feedback resistance
RUP
Rf
CG
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
CD
mA
Measurement cct 4
Measurement cct 5
µA
kΩ
kΩ
pF
SEIKO NPC CORPORATION —12
SM5010 series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
3.9
4.2
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.8
V
VOH = VDD
–
10
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
–
Output leakage current
VOL = VSS
–
–
10
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
5010FNE
f = 70MHz
–
25
50
5010FNA, FNC
f = 40MHz
–
23
45
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 50pF
5010FND
f = 50MHz
–
25
50
40
100
250
5010FNA
3.57
4.2
4.83
5010FNC
2.63
3.1
3.57
5010FND
1.87
2.2
2.53
5010FNE
1.87
2.2
2.53
5010FNA
11.7
13
14.3
5010FNC
9.9
11
12.1
5010FND
11.7
13
14.3
5010FNE
7.2
8
8.8
5010FNA
13.5
15
16.5
5010FNC
15.3
17
18.7
5010FND
15.3
17
18.7
5010FNE
13.5
15
16.5
Current consumption
INHN pull-up resistance
Feedback resistance
RUP
Rf
Measurement cct 4
Measurement cct 5
CG
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
CD
µA
mA
kΩ
kΩ
pF
SEIKO NPC CORPORATION —13
SM5010 series
5010FH× series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA
HIGH-level input voltage
VIH
INHN
LOW-level input voltage
VIL
INHN
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
IZ
IDD
RUP
Rf
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
Measurement cct 5
CG
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
CD
typ
max
3.9
4.2
–
V
–
0.3
0.5
V
2.0
–
–
V
V
–
–
0.8
VOH = VDD
–
–
10
VOL = VSS
–
–
10
5010FHA, FHC
f = 40MHz
–
13
26
5010FHD
f = 50MHz
–
15
30
5010FHE
f = 60MHz
–
17
34
40
100
250
5010FHA
3.57
4.2
4.83
5010FHC
2.63
3.1
3.57
5010FHD
1.87
2.2
2.53
5010FHE
1.87
2.2
2.53
5010FHA
11.7
13
14.3
Measurement cct 4
Unit
min
5010FHC
9.9
11
12.1
5010FHD
11.7
13
14.3
5010FHE
7.2
8
8.8
5010FHA
13.5
15
16.5
5010FHC
15.3
17
18.7
5010FHD
15.3
17
18.7
5010FHE
13.5
15
16.5
µA
mA
kΩ
kΩ
pF
5010HN×, HK× series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Rating
Condition
min
typ
max
Unit
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
3.9
4.2
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
2.0
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.8
V
Output leakage current
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
VOH = VDD
–
–
10
VOL = VSS
–
–
10
IDD1
Measurement cct 3, load cct 2,
INHN = open, CL = 15pF, f = 50MHz
5010HK1
–
20
40
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 50pF, f = 50MHz
5010HN1
–
25
50
RUP
Measurement cct 4
40
100
250
kΩ
Rf
Measurement cct 5
80
200
500
kΩ
Current consumption
INHN pull-up resistance
Feedback resistance
Built-in capacitance
CG
CD
µA
mA
Design value. A monitor pattern on a wafer is tested.
11.7
13
14.3
15.3
17
18.7
pF
SEIKO NPC CORPORATION —14
SM5010 series
Switching Characteristics
5010AN×, BN×, DN× series
3V operation/Duty level: CMOS
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Output rise time
tr1
Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD
–
3.0
6.0
ns
Output fall time
tf1
Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD
–
3.0
6.0
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF, f = 30MHz
40
–
60
%
–
–
100
ns
–
–
100
ns
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
5010AN×, AK×, BN×, BK×, DN× series
5V operation/Duty level: CMOS (5010AN×, BN×, DN1)
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
2.0
4.0
CL = 50pF
–
4.0
8.0
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
2.0
4.0
CL = 50pF
–
4.0
8.0
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 50pF, f = 30MHz
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level: TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5)
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Output rise time
tr3
Measurement cct 6, load cct 2, CL = 15pF, 0.4V to 2.4V
–
1.5
3.0
ns
Output fall time
tf3
Measurement cct 6, load cct 2, CL = 15pF, 2.4V to 0.4V
–
1.5
3.0
ns
Output duty cycle1
Duty
Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C,
CL = 15pF, f = 30MHz
45
–
55
%
Output disable delay time
tPLZ
–
–
100
ns
Output enable delay time
tPZL
–
–
100
ns
Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —15
SM5010 series
5010AH×, BH× series
3V operation/Duty level: CMOS
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Output rise time
tr1
Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD
–
8
16
ns
Output fall time
tf1
Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD
–
8
16
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF, f = 16MHz
40
–
60
%
–
–
100
ns
–
–
100
ns
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
5
10
CL = 50pF
–
13
26
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
5
10
CL = 50pF
–
13
26
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF, f = 30MHz
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —16
SM5010 series
5010CL× series
3V operation/Duty level: CMOS
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr4
Output fall time
tf1
tf4
Output duty cycle1
Duty
Output disable delay time2
tPLZ
Output enable delay time2
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
2.0
4.0
CL = 30pF
–
3.0
6.0
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
2.0
4.0
CL = 30pF
–
3.0
6.0
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF, f = 30MHz
Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time2
tPLZ
Output enable delay time2
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
4.0
8.0
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
4.0
8.0
40
–
60
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 50pF, f = 30MHz
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —17
SM5010 series
5010EA× series
3V operation/Duty level: CMOS
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Output rise time
tr1
Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD
–
8
16
ns
Output fall time
tf1
Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD
–
8
16
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF, f = 30MHz
40
–
60
%
–
–
100
ns
–
–
100
ns
Output duty cycle1
Duty
Output disable delay time2
tPLZ
Output enable delay time2
tPZL
Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty1
Duty2
Output disable delay time2
tPLZ
Output enable delay time2
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
5
10
CL = 50pF
–
13
26
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
5
10
CL = 50pF
–
13
26
Measurement cct 6, load cct 1,
VDD = 5.0V, Ta = 25°C, CL = 15pF
f = 30MHz
45
–
55
f = 40MHz
40
–
60
–
–
100
ns
–
–
100
ns
ns
ns
%
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —18
SM5010 series
5010FN× series
3V operation/Duty level: CMOS
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Output rise time
tr1
Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD
–
3.0
6.0
ns
Output fall time
tf1
Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD
–
3.0
6.0
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF, f = 40MHz
40
–
60
%
–
–
100
ns
–
–
100
ns
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
3.0
6.0
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
3.0
6.0
CL = 50pF
f = 50MHz
45
–
55
CL = 15pF
f = 70MHz
40
–
60
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1,
VDD = 5.0V, Ta = 25°C
ns
ns
%
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —19
SM5010 series
5010FH× series
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
4
8
CL = 50pF
–
11
21
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
4
8
CL = 50pF
–
11
21
Measurement cct 6, load cct 1,
VDD = 5.0V, Ta = 25°C, CL = 15pF
f = 50MHz
45
–
55
f = 60MHz
40
–
60
–
–
100
ns
–
–
100
ns
ns
ns
%
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
1. The duty cycle characteristic is checked the sample chips of each production lot.
5010HN× series
5V operation/Duty level: CMOS
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
3.0
6.0
Measurement cct 6, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
1.5
3.0
CL = 50pF
–
3.0
6.0
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 50pF, f = 50MHz
Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —20
SM5010 series
5010HK× series
5V operation/Duty level: TTL
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
tr3
Output rise time
tr5
tf3
Output fall time
tf5
Output duty cycle1
Duty
Output disable delay time
tPLZ
Output enable delay time
tPZL
Condition
Unit
min
typ
max
Measurement cct 6, load cct 2,
0.4V to 2.4V
CL = 15pF
–
1.2
2.4
CL = 50pF
–
2.0
5.0
Measurement cct 6, load cct 2,
2.4V to 0.4V
CL = 15pF
–
1.2
2.4
CL = 50pF
–
2.0
5.0
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C,
CL = 15pF, f = 50MHz
Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C,
CL = 15pF
ns
ns
1. The duty cycle characteristic is checked the sample chips of each production lot.
Current consumption and Output waveform with NPC’s standard crystal
for Fundamental oscillator
Cb
f [MHz]
R [Ω]
L [mH]
Ca [fF]
Cb [pF]
30
17.2
4.36
6.46
2.26
40
16.8
2.90
5.47
2.08
for 3rd overtone oscillator
L
Ca
R
f [MHz]
R [Ω]
L [mH]
Ca [fF]
Cb [pF]
30
18.62
16.24
1.733
5.337
40
20.53
11.34
1.396
3.989
50
22.17
7.40
1.370
4.105
60
15.37
3.83
1.836
5.191
70
25.42
4.18
1.254
5.170
SEIKO NPC CORPORATION —21
SM5010 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
VDD
VDD
C1
Signal
Generator
XT
RUP1 =
Q
VDD
IPR
(VIL = 0V)
R2
R1
VSS
INHN
VSS
RUP2 = VDD VIH (V IH = 0.7V DD)
IPR
V
VIH
VIL
VOH
0V
Q output
2.0VP−P , 10MHz sine wave input signal (3V operation)
3.5VP−P , 10MHz sine wave input signal (5V operation)
C1 : 0.001µF
R1 : 50Ω
R2 : 5010AN×, BN×, DN×, AK×, BK×
3V operation: 263Ω
5V operation: 245Ω
5010FN×, HN×, HK×
3V operation: 275Ω
5V operation: 245Ω
5010CL×
3V operation: 275Ω
5V operation: 250Ω
5010EA×, AH×, BH×
3V operation: 1050Ω
5010EA×, AH×, BH×, FH×
5V operation: 975Ω
A
IPR
Measurement cct 5
VDD
XT
Rf =
XTN
VDD
IRf
VSS
A
IRf
Measurement cct 2
Measurement cct 6
IZ, IOL
VDD
IZ
A
Q
CG
VDD
XT
INHN VSS
IST
A
V VOL
Rfo
X'tal
Q
XTN
INHN
CD
Measurement cct 3
VSS
Crystal oscillation
CG, CD: 22pF (5010DN×)
Rfo: 3.0kΩ (5010H××)
A
IDD
Measurement cct 7
VDD
C1
Signal
Generator
XT
R1
Q
VSS
VDD
Signal
Generator
XT
R1
Q
VSS INHN
2.0VP−P , 30MHz sine wave input signal (3V operation)
3.5VP−P , 30MHz sine wave input signal (5V operation)
C1 : 0.001µF
R1 : 50Ω
R1 : 50Ω
SEIKO NPC CORPORATION —22
SM5010 series
Load cct 1
Load cct 2
Q output
R
CL
Q output
(Including probe
capacitance)
CL
(Including probe
capacitance)
CL = 15pF : DUTY , IDD , tr1 , tf1
CL = 30pF : tr4 , tf4
CL = 50pF : tr2 , tf2
CL = 15pF : DUTY, IDD , tr3 , tf3
CL = 50pF : tr5 , tf5
R = 400Ω
Switching Time Measurement Waveform
Output duty level (CMOS)
0.9VDD
Q output
0.9VDD
0.1VDD
0.1VDD
DUTY measurement
voltage (0.5V DD )
TW
tr
tf
Output duty level (TTL)
Q output
2.4V
2.4V
0.4V
0.4V
DUTY measurement
voltage (1.4V )
TW
tr
tf
Output duty cycle (CMOS)
DUTY measurement
voltage (0.5V DD)
Q output
TW
T
DUTY= TW/ T
100 (%)
Output duty cycle (TTL)
DUTY measurement
voltage (1.4V )
Q output
TW
T
DUTY= TW/ T
100 (%)
SEIKO NPC CORPORATION —23
SM5010 series
Output Enable/Disable Delay
INHN
VIH
VIL
tPLZ
tPZL
Q output
INHN input waveform tr = tf
10ns
Note (CL×/EA× series only): when the device is in standby, the oscillator stops. When standby is released, the
oscillator starts and stable oscillator output occurs after a short delay.
SEIKO NPC CORPORATION —24
SM5010 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: [email protected]
NC0015DE
2006.04
SEIKO NPC CORPORATION —25
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