CTLDM7003-M621 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7003-M621 is a silicon N-Channel enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. MARKING CODE: CS TLM621 CASE FEATURES: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment • • • • • • MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IDM PD TJ, Tstg ΘJA • Device is Halogen Free by design APPLICATIONS: ESD Protection up to 2kV Low rDS(ON) Low Threshold Voltage Fast Switching Logic Level Compatible Small TLMTM 2x1mm Package ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=5.0V IGSSF, IGSSR VGS=10V IGSSF, IGSSR VGS=12V IDSS VDS=50V, VGS=0 BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=115mA rDS(ON) VGS=1.8V, ID=50mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA gFS VDS=10V, ID=200mA Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Qg(tot) VDS=25V, VGS=4.5V, ID=100mA Qgs VDS=25V, VGS=4.5V, ID=100mA Qgd VDS=25V, VGS=4.5V, ID=100mA 50 50 12 280 1.5 0.9 -65 to +150 139 otherwise noted) MIN TYP 50 0.49 1.6 1.3 1.1 MAX 100 2.0 2.0 50 1.0 1.4 3.0 2.5 2.0 200 5.0 50 25 0.764 0.148 0.156 UNITS V V V mA A W °C °C/W UNITS nA μA μA nA V V V Ω Ω Ω mS pF pF pF nC nC nC Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2.h R2 (9-February 2015) CTLDM7003-M621 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TLM621 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) R0 *Exposed pad P connects pins 1, 2, 5, and 6. PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Gate 4) Source 5) Drain 6) Drain MARKING CODE: CS R2 (9-February 2015) w w w. c e n t r a l s e m i . c o m CTLDM7003-M621 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R2 (9-February 2015) w w w. c e n t r a l s e m i . c o m CTLDM7003-M621 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SERVICES • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) • Bare Die Available for Hybrid Applications LIMITATIONS AND DAMAGES DISCLAIMER: In no event shall Central be liable for any collateral, indirect, punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order or contract or the use of products provided hereunder, regardless of whether Central has been advised of the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than two (2) years after the related cause of action has occurred. In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the total amount paid to Central for the specific products sold under a purchase order or contract with respect to which losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to Buyer under a purchase order or contract shall not enlarge or extend this limit. Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order or contract and that in the absence of such limitations, the material and economic terms of the purchase order or contract would be substantially different. R2 (9-February 2015) w w w. c e n t r a l s e m i . c o m