ES5A THRU ES5J SURFACE MOUNT SUPER FAST RECTIFIER Forward Current - 3.0 Amperes Reverse Voltage - 50 to 600 Volts FEATURES DO-214AB/SMC The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Glass passivated chip junction 0.245(6.22) 0.220(5.59) 0.126 (3.20) 0.114 (2.90) 0.280(7.11) 0.260(6.60) 0.012(0.305) 0.006(0.152) MECHANICAL DATA 0.103(2.62) 0.079(2.06) 0.060(1.52) 0.030(0.76) Case : JEDEC DO-214AB molded plastic body over passivated chip Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.007 ounce, 0.25grams 0.008(0.203)MAX. 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. YFW Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS VRRM VRMS VDC 50 35 50 100 70 100 150 105 150 ES5D ES5E 200 140 200 ES5G ES5J UNITS 400 280 400 600 420 600 VOLTS VOLTS VOLTS 300 210 300 I(AV) 5.0 Amps IFSM 150 Amps VF 0.95 1.25 1.7 Volts IR 5.0 150 µA trr 35 ns CJ RθJA TJ,TSTG 25 47.0 -50 to +150 pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.yfwdiode.com ES5A ES5B ES5C RATINGS AND CHARACTERISTIC CURVES ES5A THRU ES5J Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 10 ohm Noninductive 50 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 6 300 5 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 4 3 2 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 1 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0 25 50 75 100 125 150 175 0 80 60 100 Fig.5 Typical Junction Capacitance 150 10 T J =25°C 1.0 ES5A ~ES5D ES5E -- ES5G 0.1 ES5J 0.01 0.001 0 0.5 1.5 1.0 2.0 2.5 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 175 ES5A ~ES5D 150 ES5E --ES5J 125 100 75 50 25 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 www.yfwdiode.com 10 125 100 75 50 T J =25°C f = 1.0MHz V sig = 50mV p-p 25 0.1 1 10 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 40 20 % of PIV.VOLTS Junction Capacitance ( pF) Instaneous Forward Current (A) Lead Temperature (°C) Fig.4 Typical Forward Characteristics 100 100