CYSTEKEC MBR20200E3 20amp. schottky barrier rectifier Datasheet

CYStech Electronics Corp.
20Amp. Schottky Barrier Rectifiers
MBR20200E3
IF(AV)
VRRM
Tj
VF
Spec. No. : C459E3
Issued Date : 2008.11.07
Revised Date :2009.10.23
Page No. : 1/4
2 × 10A
200V
175°C
0.68V
Features
• 175℃ operating junction temperature
• Low VF and low IR type
• Metal silicon junction, major carrier conduction
• 20A total (10A per diode leg)
• Guardring for over voltage protection
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed : 260℃/10s, 0.25”(6.35mm) from case
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
• RoHS compliant package
Mechanical Data
• Case: JEDEC TO-220AB molded plastic
• Mounting Position: Any
• Weight: 0.08 ounce, 2.24 grams
• Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026
• Epoxy: UL 94V-0 rate flame retardant
• Mounting Torque : 5 in-lbs max
Equivalent Circuit
MBR20200E3
Outline
TO-220AB
AKA
MBR20200E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C459E3
Issued Date : 2008.11.07
Revised Date :2009.10.23
Page No. : 2/4
Maximum Ratings and Electrical Characteristics (Per Diode Leg)
(Rating at 25°C ambient temperature unless otherwise specified.
resistive or inductive load.
Single phase, half wave, 60Hz,
For capacitive load, derate current by 20%.)
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
IF=10A, TC=25℃
Maximum instantaneous
IF=10A, TC=125℃
forward voltage at
IF=20 A, TC=25℃
Max.
200
140
200
Units
V
V
V
0.90
0.80
1.00
0.90
V
IF(AV)
10
20
A
IFRM
20
A
IFSM
150
A
Peak repetitive reverse surge current (Note 1 ), TJ<175℃
VR=200 V, TC=25℃
Maximum instantaneous
reverse current at
VR=200 V, TC=125℃
IRRM
Voltage rate of change, (rated VR)
dV/dt
2.5
10
5
10,000
A
μA
mA
V/μs
(Note 1)
Symbol
VRRM
VRMS
VDC
Min.
Typ.
0.68
VF
IF=20A, TC=125℃
Maximum Average forward rectified Per Diode
current @ TC=161℃
Per Device
Peak repetitive forward current
(square wave, 20kHz, TC=158℃)
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Typical junction capacitance @ f=1MHz and applied
5V reverse voltage
ESD susceptibility (Note 2)
Storage temperature range
Operating junction temperature range
IR
CJ
pF
130
Tstg
TJ
8000
+175
+175
-65
-65
V
℃
℃
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case
Maximum Thermal Resistance, Junction-to-ambient
Symbol
Rth,j-c
Rth,j-a
Value
2
60
Unit
°C/W
°C/W
Ordering Information
Device
MBR20200E3
MBR20200E3
Package
TO-220AB
(RoHS compliant package)
Shipping
Marking
50 pcs / Tube, 40 Tubes/Box
20200
CYStek Product Specification
Spec. No. : C459E3
Issued Date : 2008.11.07
Revised Date :2009.10.23
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Maximum Non-Repetitive Forward Surge Current
Forward Current Derating Curve
200
Peak Forward Surge Current---IFSM (A)
Average Forward Current---Io(A)
25
20
resistive or inductive load
15
10
5
Tj=150℃, 8.3ms Single
Half Sine Wave, JEDEC
method, Per leg
150
100
50
0
0
0
25
50
75
100
125
150
1
175
Case Temperature---TC(℃)
10
100
Number of Cycles at 60Hz
Forward Current vs Forward Voltage
Junction Capacitance vs Reverse Voltage
100000
1000
Junction Capacitance---C J(pF)
Instantaneous Forward Current---IF(mA)
Per leg
10000
Tj=150℃
1000
Tj=25℃
100
10
Pulse width=300μs,
1% Duty cycle
100
Tj=25℃, f=1.0MHz
Per Leg
10
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage---VF(V)
0.1
1
10
Reverse Voltage---VR(V)
Reverse Leakage Current vs Reverse Voltage
Reverse Leakage Current---I R(μA)
1000
Per leg
Tj=125℃
100
10
Tj=75℃
1
0.1
Tj=25℃
0.01
0
MBR20200E3
20
40
60
80
100
120
Percent of Rated Peak Reverse Voltage---(%)
140
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C459E3
Issued Date : 2008.11.07
Revised Date :2009.10.23
Page No. : 4/4
TO-220AB Dimension
Marking:
A
B
D
E
C
CYS
20200
Device
Name
□□
H
K
M
I
Date Code
3
G
N
2
1
4
O
P
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Style: Pin
1.Anode 2.Cathode 3.Anode
*: Typical
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295 0.0374
0.0449 0.0551
*0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MBR20200E3
CYStek Product Specification
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