NCV8716 80 mA Ultra-Low Iq, Wide Input Voltage Low Dropout Regulator The NCV8716 is 80 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. Features • MARKING DIAGRAMS 1 WDFN6 CASE 511BR • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: • • • • • • • www.onsemi.com 1.5 V to 5.0 V Ultra Low Quiescent Current: Max. 4.7 mA over Temperature ±2% Accuracy over Full Load, Line and Temperature Variations PSRR: 60 dB at 100 kHz Noise: 200 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit Protection Available in wDFN6, 2x2x0.8 mm Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to +125°C Ambient Operating Temperature Range These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant XX M XX = Specific Device Code M = Date Code PIN CONNECTIONS 1 2 3 6 EXP 5 4 WDFN6 2x2 mm (Top View) ORDERING INFORMATION Typical Applications See detailed ordering, marking and shipping information on page 16 of this data sheet. • Portable Equipment • Communication Systems Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 5 1 Publication Order Number: NCV8716/D NCV8716 IN UVLO BANDGAP REFERENCE THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 6 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to assure stability. 2 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 3, EXP GND Power supply ground. Exposed pad EXP must be tied with GND pin 3. 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Output Voltage Output Short Circuit Duration Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 6 V tSC Indefinite s TJ(MAX) 150 °C TA −40 to 125 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Maximum Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latch up Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS Rating Thermal Characteristics, wDFN6, 2 mm x 2 mm Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 120 °C/W Table 4. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Input Voltage VIN 2.5 24 V Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCV8716 Table 5. ELECTRICAL CHARACTERISTICS Voltage version 1.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Test Conditions Symbol Min Operating Input Voltage IOUT ≤ 10 mA VIN 2.5 Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.455 Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Parameter 10 mA < IOUT < 80 mA Typ 3.0 Max Unit 24 V 24 1.5 1.545 V RegLINE 20 25 mV IOUT = 0 mA to 80 mA RegLOAD 20 25 mV (Note 6) IOUT Dropout voltage (Note 3) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 4) Thermal Shutdown Hysteresis (Note 4) 0 < IOUT < 80 mA, VIN = 24 V 110 mA 3.4 56 dB VOUT = 1.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 120 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH f = 100 kHz − 25 5.8 mA IGND PSRR VIN = 3.0 V, VOUT = 1.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 80 mA 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Respect SOA www.onsemi.com 3 NCV8716 Table 6. ELECTRICAL CHARACTERISTICS Voltage version 1.8 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9) Test Conditions Symbol Min Operating Input Voltage IOUT ≤ 10 mA VIN 2.8 Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.746 Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Parameter 10 mA < IOUT < 80 mA Typ 3.0 Max Unit 24 V 24 1.8 1.854 V RegLINE 15 20 mV IOUT = 0 mA to 80 mA RegLOAD 15 20 mV (Note 10) IOUT Dropout voltage (Note 7) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) 0 < IOUT < 80 mA, VIN = 24 V 110 mA 3.4 60 dB VOUT = 1.8 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 140 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH f = 100 kHz − 25 5.8 mA IGND PSRR VIN = 3.0 V, VOUT = 1.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Not Characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 80 mA 8. Guaranteed by design and characterization. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 10. Respect SOA www.onsemi.com 4 NCV8716 Table 7. ELECTRICAL CHARACTERISTICS Voltage version 2.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT = 80 mA VIN 3.5 2.45 Typ Max Unit 24 V Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.5 2.55 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1mA RegLINE 15 20 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 15 20 mV VDO = VIN – (VOUT(NOM) – 125 mV) IOUT = 80 mA VDO 640 mV (Note 14) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VN 160 mVrms Dropout voltage (Note 11) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 12) Thermal Shutdown Hysteresis (Note 12) VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz VOUT = 2.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz 400 Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 110 mA 5.8 °C 155 − 25 mA − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Characterized when VOUT falls 125 mV below the regulated voltage and only for devices with VOUT = 2.5 V 12. Guaranteed by design and characterization. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Respect SOA www.onsemi.com 5 NCV8716 Table 8. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 4.0 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.94 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Dropout voltage (Note 15) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 16) Thermal Shutdown Hysteresis (Note 16) Max Unit 24 V 3.0 3.06 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 580 mV (Note 18) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 58 dB VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 190 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Typ 370 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 3.0 V 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Respect SOA www.onsemi.com 6 NCV8716 Table 9. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 4.3 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 3.234 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Dropout voltage (Note 19) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 20) Thermal Shutdown Hysteresis (Note 20) Max Unit 24 V 3.3 3.366 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV VDO = VIN – (VOUT(NOM) – 165 mV) IOUT = 80 mA VDO 560 mV (Note 22) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 200 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Typ 350 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 19. Characterized when VOUT falls 165 mV below the regulated voltage and only for devices with VOUT = 3.3 V 20. Guaranteed by design and characterization. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22. Respect SOA www.onsemi.com 7 NCV8716 Table 10. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 6.0 Output Voltage Accuracy 6.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 4.9 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Dropout voltage (Note 23) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 24) Thermal Shutdown Hysteresis (Note 24) Max Unit 24 V 5.0 5.1 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV VDO = VIN – (VOUT(NOM) – 250 mV) IOUT = 80 mA VDO 500 mV (Note 26) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 54 dB VOUT = 5.0 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 220 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz Typ 310 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 23. Characterized when VOUT falls 250 mV below the regulated voltage and only for devices with VOUT = 5.0 V 24. Guaranteed by design and characterization. 25. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26. Respect SOA www.onsemi.com 8 NCV8716 TYPICAL CHARACTERISTICS 1.514 2.514 IOUT = 1 mA CIN = COUT = 1 mF 2.510 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.512 1.51 1.508 VIN = (5 V − 24 V) VIN = 3.0 V 1.506 1.504 IOUT = 1 mA CIN = COUT = 1 mF VIN = 3.5 V 2.506 VIN = (5 V − 24 V) 2.502 2.498 2.494 1.502 2.490 −40 −20 1.5 −40 −20 0 20 40 60 80 100 120 60 80 100 120 Figure 3. NCV8716x15xxx Output Voltage vs. Temperature Figure 4. NCV8716x25xxx Output Voltage vs. Temperature OUTPUT VOLTAGE (V) 4.995 OUTPUT VOLTAGE (V) 3.304 VIN = (4.3 V − 24 V) 3.300 3.296 3.292 IOUT = 1 mA CIN = COUT = 1 mF 3.288 −20 0 20 40 60 IOUT = 1 mA CIN = COUT = 1 mF VIN = (8 V − 24 V) 4.985 VIN = 6.0 V 4.975 4.965 4.955 80 100 4.945 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. NCV8716x33xxx Output Voltage vs. Temperature Figure 6. NCV8716x50xxx Output Voltage vs. Temperature 1.510 2.52 20 V 15 V 1.508 20 V 10 V 5.0 V 2.51 OUTPUT VOLTAGE (V) VIN = 3.0 V OUTPUT VOLTAGE (V) 40 TEMPERATURE (°C) 5.005 1.506 1.504 24 V 1.502 TA = 25°C CIN = COUT = 1 mF 1.500 20 TEMPERATURE (°C) 3.308 3.284 −40 0 VIN = 3.5 V 24 V 10 V 15 V 5.0 V 2.50 2.49 2.48 TA = 25°C CIN = COUT = 1 mF 2.47 2.46 1.498 0 10 20 30 40 50 60 OUTPUT CURRENT (mA) 70 0 80 10 20 30 40 50 60 70 OUTPUT CURRENT (mA) Figure 7. NCV8716x15xxx Output Voltage vs. Output Current Figure 8. NCV8716x25xxx Output Voltage vs. Output Current www.onsemi.com 9 80 NCV8716 3.304 5.000 3.300 4.995 3.296 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS VIN = 4.3 V 5.0 V 3.292 3.288 10 V TA = 25°C CIN = COUT = 1 mF 3.284 15 V 20 V VIN = 6.0 V 4.985 8.0 V 10 V 4.980 20 V 24 V 15 V 24 V 4.970 0 10 20 30 40 50 60 70 80 0 20 30 40 50 60 70 80 OUTPUT CURRENT (mA) Figure 9. NCV8716x33xxx Output Voltage vs. Output Current Figure 10. NCV8716x50xxx Output Voltage vs. Output Current 0.6 TA = 125°C DROPOUT VOLTAGE (V) CIN = COUT = 1 mF 0.5 10 OUTPUT CURRENT (mA) 0.6 DROPOUT VOLTAGE (V) 4.990 4.975 3.280 TA = 25°C 0.4 0.3 TA = −40°C 0.2 0.1 0 TA = 125°C CIN = COUT = 1 mF 0.5 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 11. NCV8716x25xxx Dropout Voltage vs. Output Current Figure 12. NCV8716x33xxx Dropout Voltage vs. Output Current 80 30 0.6 CIN = COUT = 1 mF 0.5 QUIESCENT CURRENT (mA) DROPOUT VOLTAGE (V) TA = 25°C CIN = COUT = 1 mF TA = 125°C 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 TA = 25°C CIN = COUT = 1 mF 25 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 0 10 20 30 40 50 60 70 0 80 0 5 10 15 20 OUTPUT CURRENT (mA) INPUT VOLTAGE (V) Figure 13. NCV8716x50xxx Dropout Voltage vs. Output Current Figure 14. NCV8716x15xxx Ground Current vs. Input Voltage www.onsemi.com 10 25 NCV8716 TYPICAL CHARACTERISTICS 40 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 30 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 30 25 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 0 5 10 15 20 25 0 5 10 15 20 25 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Figure 15. NCV8716x25xxx Ground Current vs. Input Voltage Figure 16. NCV8716x50xxx Ground Current vs. Input Voltage 5.5 30 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) TA = 25°C CIN = COUT = 1 mF 35 20 15 10 IOUT = 80 mA 5 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.0 V 3.0 IOUT = 0 0 0 5 10 15 20 2.5 −40 25 0 20 40 60 80 100 120 INPUT VOLTAGE (V) TEMPERATURE (°C) Figure 17. NCV8716x33xxx Ground Current vs. Input Voltage Figure 18. NCV8716x15xxx Quiescent Current vs. Temperature 5.5 5.5 IOUT = 0 CIN = COUT = 1 mF 5.0 4.5 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) −20 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.5 V 3.0 2.5 −40 −20 0 20 40 60 80 100 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 4.3 V 3.0 2.5 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 19. NCV8716x25xxx Quiescent Current vs. Temperature Figure 20. NCV8716x33xxx Quiescent Current vs. Temperature www.onsemi.com 11 NCV8716 TYPICAL CHARACTERISTICS 100 IOUT = 0 CIN = COUT = 1 mF 5.0 VIN = 24 V 4.5 4.0 VIN = 10 V 3.5 VIN = 6.0 V IOUT = 10 mA 60 40 IOUT = 80 mA 20 3.0 2.5 −40 0 −20 0 20 40 60 80 100 120 0.1 1.0 10.0 100.0 TEMPERATURE (°C) FREQUENCY (kHz) Figure 21. NVP716x50xxx Quiescent Current vs. Temperature Figure 22. NCV8716x15xxx PSRR vs. Frequency 1000.0 100 100 VIN = 3.5 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 60 40 60 IOUT = 1 mA 40 IOUT = 10 mA IOUT = 80 mA IOUT = 80 mA 20 VIN = 4.3 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 80 PSRR (dB) 80 PSRR (dB) VIN = 3.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 80 PSRR (dB) QUIESCENT CURRENT (mA) 5.5 20 IOUT = 10 mA 0 0 0.1 1 10 100 1000 0.1 10 100 FREQUENCY (kHz) FREQUENCY (kHz) Figure 23. NCV8716x25xxx PSRR vs. Frequency Figure 24. NCV8716x33xxx PSRR vs. Frequency 1000 1.6 100 VIN = 6.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 1.2 60 IOUT = 1 mA IOUT = 10 mA 40 1.0 0.8 0.6 0.4 IOUT = 80 mA 20 IOUT = 80 mA TA = 25°C VIN = 3.0 V 1.4 mV/sqrt (Hz) 80 PSRR (dB) 1 COUT = 4.7 mF 0.2 0 0.1 1 10 100 1000 COUT = 10 mF 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 25. NCV8716x50xxx PSRR vs. Frequency Figure 26. NCV8716x15xxx Output Spectral Noise Density vs. Frequency www.onsemi.com 12 NCV8716 TYPICAL CHARACTERISTICS 4.0 5.0 4.0 3.5 mV/sqrt (Hz) mV/sqrt (Hz) 3.0 IOUT = 80 mA TA = 25°C VIN = 4.3 V 4.5 IOUT = 80 mA TA = 25°C VIN = 3.5 V 3.5 2.5 2.0 1.5 3.0 2.5 2.0 1.5 1.0 COUT = 4.7 mF 0.5 1.0 COUT = 10 mF 0 0.01 0.1 1 10 COUT = 4.7 mF 0.5 0 100 1000 COUT = 10 mF 0.01 0.1 1 10 100 FREQUENCY (kHz) FREQUENCY (kHz) Figure 27. NCV8716x25xxx Output Spectral Noise Density vs. Frequency Figure 28. NCV8716x33xxx Output Spectral Noise Density vs. Frequency 8 IOUT = 80 mA TA = 25°C VIN = 6.0 V 7 6 mV/sqrt (Hz) 1000 5 4 3 2 COUT = 4.7 mF 1 COUT = 10 mF 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 29. NCV8716x50xxx Output Spectral Noise Density vs. Frequency Figure 30. Load Transient Response Figure 31. Load Transient Response Figure 32. Load Transient Response www.onsemi.com 13 NCV8716 TYPICAL CHARACTERISTICS Figure 33. Load Transient Response Figure 34. Line Transient Response Figure 35. Line Transient Response Figure 36. Line Transient Response Figure 37. Line Transient Response Figure 38. Input Voltage Turn−On Response www.onsemi.com 14 NCV8716 TYPICAL CHARACTERISTICS Figure 40. Input Voltage Turn−On Response Figure 39. Input Voltage Turn−On Response www.onsemi.com 15 NCV8716 APPLICATIONS INFORMATION Power Dissipation and Heat sinking The NCV8716 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCV8716 can handle is given by: Input Decoupling (CIN) It is recommended to connect at least 0.1 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. P D(MAX) + ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCV8716 for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Output Decoupling (COUT) The NCV8716 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 0.47 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. V IN(MAX) [ P D(MAX) ) ǒV OUT I OUTǓ I OUT ) I GND (eq. 3) For reliable operation, junction temperature should be limited to +125°C maximum. Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8716, and make traces as short as possible. ORDERING INFORMATION Device Voltage Option Marking NCV8716MT15TBG 1.5 V 7C NCV8716MT18TBG 1.8 V 7D NCV8716MT25TBG 2.5 V 7E NCV8716MT28TBG (In Development) 2.8 V 7J NCV8716MT30TBG 3.0 V 7F NCV8716MT33TBG 3.3 V 7G NCV8716MT50TBG 5.0 V 7H Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 16 NCV8716 PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511BR ISSUE B D ÇÇ ÉÉ A B A1 0.10 C 0.10 C MOLD CMPD ALTERNATE B−2 DETAIL B ALTERNATE CONSTRUCTIONS E L L TOP VIEW ALTERNATE A−1 ALTERNATE A−2 DETAIL A A3 ALTERNATE CONSTRUCTIONS A 6X 0.05 C A1 NOTE 4 C SIDE VIEW SEATING PLANE 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.90 1.10 0.65 BSC 0.40 0.20 --0.15 RECOMMENDED MOUNTING FOOTPRINT* D2 DETAIL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. FOR DEVICES CONTAINING WETTABLE FLANK OPTION, DETAIL A ALTERNATE CONSTRUCTION A-2 AND DETAIL B ALTERNATE CONSTRUCTION B-2 ARE NOT APPLICABLE. DIM A A1 A3 b D D2 E E2 e L L1 L1 DETAIL B 0.05 C ÉÉ ÇÇ EXPOSED Cu ALTERNATE B−1 ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE A3 1.72 L 3 6X 0.45 E2 1.12 6 4 6X e BOTTOM VIEW 2.30 b 0.10 M C A 0.05 M C B PACKAGE OUTLINE NOTE 3 6X 1 0.40 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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