UNISONIC TECHNOLOGIES CO., LTD BC856/BC857/BC858 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846/BC847/BC848 *Pb-free plating product number: BC856L/BC857L/BC858L ORDERING INFORMATION Order Number Normal Lead Free Plating BC856-x-AE3-R BC856L-x-AE3-R BC857-x-AE3-R BC857L-x-AE3-R BC858-x-AE3-R BC858L-x-AE3-R Note: x: Rank Package SOT-23 SOT-23 SOT-23 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel MARKING BC856 BC857 BC858 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-028,B BC856/BC857/BC858 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT -80 V Collector-Base Voltage VCBO -50 V -30 V -65 V Collector-Emitter Voltage VCEO -45 V -30 V Emitter-Base Voltage VEBO -5 V Collector Dissipation PD 310 mW Collector Current (DC) IC -100 mA Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC856 BC857 BC858 BC856 BC857 BC858 ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current DC Current Gain SYMBOL TEST CONDITIONS ICBO VCB=-30V, IE=0 hFE VCE=-5V, IC=-2mA IC=-10mA,IB=-0.5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA,IB=-5mA IC=-10mA,IB=-0.5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-100mA,IB=-5mA VCE=-5V,IC=-2mA Base-Emitter On Voltage VBE(ON) VCE=-5V,IC=-10mA Current Gain Bandwidth Product fT VCE=-5V,IC=-10mA, f=100MHz Output Capacitance Cob VCB=-10V,IE=0,f=1MHz Noise Figure NF VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ MIN 110 -600 TYP MAX UNIT -15 nA 800 -90 -300 mV -250 -700 -900 -660 150 2 -650 mV mV mV -750 mV -800 mV MHz 6 pF 10 dB CLASSIFICATION OF hFE RANK RANGE A 110-220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 200-450 C 420-800 2 of 4 QW-R206-028,B BC856/BC857/BC858 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current, IC (mA) Saturation Voltage, VBE(SAT). VEC(SAT) (V) DC Current Gain, hFE Collector Current, IOUT(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-028,B BC856/BC857/BC858 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-028,B