INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL530N，IIRL530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±16 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.9 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL530N，IIRL530N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 100 VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 1 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 2 V VGS=10V; ID=9.0A 0.1 Ω Gate-Source Leakage Current VGS=±16V ±0.1 μA IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V 25 μA VSD Diode forward voltage IS=9A;VGS = 0V 1.3 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark