BZG03C-Series Vishay Semiconductors Zener Diodes Features • • • • • • • Glass passivated junction High reliability e3 Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads Wave and reflow solderable Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 15811 Applications Mechanical Data Voltage stabilization Case: DO-214AC Weight: approx. 77 mg Packaging Codes/Options: TR / 1.5 k 7 " reel TR3 / 6 k 13 " reel 6 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA < 25 K/W, Tamb = 100 °C Pdiss 3 W RthJA < 100 K/W, Tamb = 50 °C Pdiss 1.25 W Non repetitive peak surge power tp = 100 µs sq.pulse, Tj = 25 °C dissipation prior to surge PZSM 600 W Power dissipation Junction temperature Storage temperature range Tj 150 °C Tstg - 65 to + 150 °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJL 25 K/W mounted on epoxy-glass hard tissue, Fig. 1a RthJA 150 K/W mounted on epoxy-glass hard tissue, Fig. 1b RthJA 125 K/W mounted on Al-oxid-ceramic (Al2O3), Fig. 1b RthJA 100 K/W Junction lead Junction ambient Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85593 Rev. 1.7, 15-Sep-05 Test condition IF = 0.5 A Symbol VF Min Typ. Max Unit 1.2 V www.vishay.com 1 BZG03C-Series Vishay Semiconductors Electrical Characteristics BZG03C... Partnumber Zener Voltage Range Dynamic Resistance VZ @ IZT V min max Temperature Coefficient of Zener Voltage rzj and TKVZ @ IZT IZT TKVZ@ IZT Ω mA %/K typ max Reverse Leakage Current IR @ V R µA min max max V BZG03C10 9.4 10 10.6 2 4 50 0.05 0.09 10 7.5 BZG03C11 10.4 11 11.6 4 7 50 0.05 0.1 4 8.2 BZG03C12 11.4 12 12.7 4 7 50 0.05 0.1 3 9.1 BZG03C13 12.4 13 14.1 5 10 50 0.05 0.1 2 10 BZG03C15 13.8 15 15.6 5 10 50 0.05 0.1 1 11 BZG03C16 15.3 16 17.1 6 15 25 0.06 0.11 1 12 BZG03C18 16.8 18 19.1 6 15 25 0.06 0.11 1 13 BZG03C20 18.8 20 21.2 6 15 25 0.06 0.11 1 15 BZG03C22 20.8 22 23.3 6 15 25 0.06 0.11 1 16 BZG03C24 22.8 24 25.6 7 15 25 0.06 0.11 1 18 BZG03C27 25.1 27 28.9 7 15 25 0.06 0.11 1 20 BZG03C30 28 30 32 8 15 25 0.06 0.11 1 22 BZG03C33 31 33 35 8 15 25 0.06 0.11 1 24 BZG03C36 34 36 38 21 40 10 0.06 0.11 1 27 BZG03C39 37 39 41 21 40 10 0.06 0.11 1 30 BZG03C43 40 43 46 24 45 10 0.07 0.12 1 33 BZG03C47 44 47 50 24 45 10 0.07 0.12 1 36 BZG03C51 48 51 54 25 60 10 0.07 0.12 1 39 BZG03C56 52 56 60 25 60 10 0.07 0.12 1 43 BZG03C62 58 62 66 25 80 10 0.08 0.13 1 47 BZG03C68 64 68 72 25 80 10 0.08 0.13 1 51 BZG03C75 70 75 79 30 100 10 0.08 0.13 1 56 BZG03C82 77 82 87 30 100 10 0.08 0.13 1 62 BZG03C91 85 91 96 60 200 5 0.09 0.13 1 68 BZG03C100 94 100 106 60 200 5 0.09 0.13 1 75 BZG03C110 104 110 116 80 250 5 0.09 0.13 1 82 BZG03C120 114 120 127 80 250 5 0.09 0.13 1 91 BZG03C130 124 130 141 110 300 5 0.09 0.13 1 100 BZG03C150 138 150 156 130 300 5 0.09 0.13 1 110 BZG03C160 158 160 171 150 350 5 0.09 0.13 1 120 BZG03C180 168 180 191 180 400 5 0.09 0.13 1 130 BZG03C200 188 200 212 200 500 5 0.09 0.13 1 150 BZG03C220 208 220 233 350 750 2 0.09 0.13 1 160 BZG03C240 228 240 256 400 850 2 0.09 0.13 1 180 BZG03C270 251 270 289 450 1000 2 0.09 0.13 1 200 www.vishay.com 2 typ Test Current Document Number 85593 Rev. 1.7, 15-Sep-05 BZG03C-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) a) b) 3.0 2.0 I F – Forward Current (A ) 5.0 2.0 1.5 10.0 2.5 2.0 1.5 1.0 0.5 1.0 25.0 0 0 25.0 94 9313 Figure 1. Boards for RthJA definition (copper overlay 35µ) PZSM – Non-Repetitive Surge Power Dissipation (W) Ptot –Total PowerDissipation(W ) 3 RthJA=25K/W 2 RthJA=100K/W 1 80 120 160 100 10 0.01 0.1 1 10 100 tp – Pulse Length ( ms ) 94 9582 Figure 2. Total Power Dissipation vs. Ambient Temperature Z thp–Thermal Resistance for Pulse Cond.(K/W 2.0 1000 200 Tamb – Ambient Temperature(°C ) 94 9580 1.5 10000 0 40 1.0 Figure 3. Forward Current vs. Forward Voltage 4 0 0.5 V F – Forward Voltage ( V ) 94 9581 Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length 1000 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10–5 tp/T=0.01 10–4 94 9583 10–3 10–2 10–1 100 101 102 tp – Pulse Length ( s ) Figure 5. Thermal Response Document Number 85593 Rev. 1.7, 15-Sep-05 www.vishay.com 3 BZG03C-Series Vishay Semiconductors Package Dimensions in mm (Inches) 19628 www.vishay.com 4 Document Number 85593 Rev. 1.7, 15-Sep-05 BZG03C-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85593 Rev. 1.7, 15-Sep-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1