CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E D N Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. C .110 TAB .250 TAB F G M R P BvP BuP BwP EvP v EuP u BuN EwP w BvN EuN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (150ns) Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking BwN EvN EwN N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.21 107.0 K 0.79 20.0 B 3.66±0.01 93.0±0.3 L 0.71 18.0 C 3.19 81.0 M 0.69±0.02 17.5±0.5 D 1.77 45.0 N 0.69 17.5 E 1.18 30.0 P 0.63 16.0 F 1.04 26.5 Q 0.55 14.0 G 1.01 25.6 R 0.30 7.5 H 0.85 21.5 S 0.22 Dia. Dia. 5.5 J 0.83 21.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM30TF-12H is a 600V (VCES), 30 Ampere SixIGBT IGBTMOD™ Power Module. Type Current Rating Amperes (30) VCES Volts (x 50) CM 30 12 303 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM30TF-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 30 Amperes ICM 60* Amperes Collector Current Peak Collector Current Diode Forward Current IF 30 Amperes Diode Forward Surge Current IFM 60* Amperes Power Dissipation Pd 150 Watts – 17 in-lb – 260 Grams VRMS 2500 Volts Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units mA Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 3mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 30A, VGE = 15V – 2.1 2.8** Volts IC = 30A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 30A, VGS = 15V – 90 – nC Diode Forward Voltage VFM IE = 30A, VGS = 0V – – 2.8 Volts Min. Typ. Max. Units – – 3.0 nF – – 1.1 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz Reverse Transfer Capacitance Cres – – 0.6 nF Resistive td(on) – – 120 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 300V, IC = 30A, – – 300 ns td(off) VGE1 = VGE2 = 15V, RG = 21Ω – – 200 ns – – 300 ns Diode Reverse Recovery Time trr tf IE = 30A, diE/dt = –60A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 30A, diE/dt = –60A/µs – 0.08 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 304 Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.80 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 2.00 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.058 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts 60 VGE = 20V 15 50 40 11 30 10 20 9 10 7 50 40 30 20 10 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 20 0 10 20 30 40 50 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 10 IC = 60A 6 IC = 30A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 8 101 100 Cies Coes 10-1 VGE = 0V f = 1MHz IC = 12A 100 8 12 16 0 20 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) 103 tf td(off) 102 td(on) VCC = 300V VGE = ±15V RG = 21Ω Tj = 125°C tr 101 100 0.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 100 t rr di/dt = -60A/µsec Tj = 25°C 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 101 102 GATE CHARGE, VGE 101 102 Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 10-2 10-1 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 0 60 101 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 8 0 SWITCHING TIME, (ns) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 60 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 16 VCC = 200V 12 VCC = 300V 8 4 0 0 20 40 60 80 100 120 GATE CHARGE, QG, (nC) 305 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 306 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.8°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 2.0°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3