SeCoS BAV70W Dual chips common cathode surface mount switching diode Datasheet

BAV70W
Dual Chips Common Cathode
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
.
.
.
.
A
Fast Switching Speed
L
Surface Mount Package Ideally Suited for
Automatic Insertion
3
For General Purpose Switching Applications
1
Top View
B S
2
High Conductance
V
G
ANODE
1
C
3
2
CATHODE
ANODE
H
D
J
K
MAXIMUM RATINGS (EACH DIODE)
Symbol
Value
Unit
Reverse Voltage
VR
70
V dc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Rating
Peak Forward Surge Current
SOT-323(SC-70)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD
200
mW
1.6
Thermal Resistance, Junction to Ambient
R θJ A
Total Device Dissipation
Alumina S ubstrate,(2) AT=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
0.625
300
PD
Dim
Min
Max
A
1.800
2.200
B
1.150
1.350
C
0.800
1.000
D
0.300
0.400
G
1.200
1.400
mW/°C
H
0.000
0.100
°C/W
J
0.100
0.250
mW
K
0.350
0.500
L
0.590
0.720
2.4
mW/°C
S
2.000
2.400
R θJ A
417
°C /W
V
0.280
0.420
T J , Tstg
–55to+150
°C
All Dimension in mm
DEVICE MARKING
B AV70W = A 4, KJA
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V (B R )
70
—
V dc
—
—
5.0
100
—
1.5
—
—
—
—
715
855
1000
1250
OFF CHARACTERISTICS
Revers e B reakdown Voltage
(I( BR) = 100 .Adc)
R evers e Voltage Leakage C urrent
IR
(V R = 70 V dc)
(V R = 70 V dc, T J = 150°C )
uAdc
Diode C apacitance
(V R = 0, f = 1.0 MHz)
CD
F orward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
VF
R evers e R ecovery Time
(I F = I R = 10 mAdc, I R (R E C ) = 1.0 mAdc) (F igure 1) R L = 100
trr
—
6.0
ns
VR F
—
1.75
V
F orward R ecovery T ime
(I F = 10 mAdc, t r = 20 ns ) (F igure 2)
pF
mV dc
1. FR…5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
BAV70W
Dual Chips Common Cathode
Surface Mount Switching Diode
Elektronische Bauelemente
BAV70
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
RL = 50 Ω
IF
tr
tp
I
10%
+IF
trr
10%ĂOFĂ
90%
VR
OUTPUT PULSE
VR
100ĂW
INPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
1 KΩ
450 Ω
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
RL = 50 Ω
BAV70
I
V
90%
VFR
10%
t
tr
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
tp
INPUT PULSE
Figure 2.
OUTPUT PULSE
t
Any changing of specification will not be informed individual
Page 2 of 3
BAV70W
Dual Chips Common Cathode
Surface Mount Switching Diode
Elektronische Bauelemente
IF, FORWARD CURRENT (mA)
100
10
O
TA = 855C
O
TA= 255 C
1.0
O
TA= - 405C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
Figure 3. Forward Voltage
10
O
IR , REVERSE CURRENT (µA)
TA =1505 C
O
TA = 1255 C
1.0
TA = 855C
O
0.1
O
TA = 555C
0.01
O
TA = 255C
0.001
0
10
20
30
40
VR, REV ERSE VOLTAGE (VOLTS)
50
Figure 4. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REV ERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 3 of 3
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