VSKDS220/030P Vishay High Power Products Schottky Rectifier, 110 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • UL pending ADD-A-PAK • Totally lead (Pb)-free, RoHS compliant • Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) 110 A MECHANICAL DESCRIPTION DESCRIPTION The Generation 5 of ADD-A-PAK module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of ADD-A-PAK module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. The VSKDS220.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 µs sine VF 110 Apk, TJ = 125 °C TJ Range VALUES UNITS 110 A 30 V 18 000 A 0.42 V - 55 to 150 °C VSKDS220/030P UNITS 30 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Document Number: 94446 Revision: 24-Apr-08 SYMBOL VR VRWM For technical questions, contact: [email protected] www.vishay.com 1 VSKDS220/030P Vishay High Power Products Schottky Rectifier, 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS 50 % duty cycle at TC = 95 °C, rectangular waveform VALUES UNITS 110 Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 15 Amps, L = 1 mH 99 mJ IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 22 A TEST CONDITIONS VALUES UNITS 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Repetitive avalanche current Following any rated load condition and with rated VRRM applied 18 000 A 2000 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 110 A VFM (1) Maximum forward voltage drop 220 A 110 A 220 A Maximum reverse leakage current IRM (1) TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated VR RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted (1 s) 0.54 0.72 V 0.49 0.74 10 650 mA 7400 pF 7.0 nH 10 000 V/µs 3500 V VALUES UNITS - 55 to 150 °C Note (1) Pulse width < 500 µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation 0.6 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.1 °C/W Approximate weight Mounting torque ± 10 % Case style www.vishay.com 2 110 g 4 oz. to heatsink 5 busbar 4 JEDEC For technical questions, contact: [email protected] Nm TO-240AA Document Number: 94446 Revision: 24-Apr-08 VSKDS220/030P Schottky Rectifier, 110 A 10000 Reverse Current - IR (mA) 1000 Tj = 150°C 100 1000 150°C 125°C 100 100°C 10 75°C 1 50°C 0.1 25°C 0.01 0 5 10 15 20 25 Reverse Voltage - VR (V) 30 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 Tj = 125°C 10 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Vishay High Power Products Tj = 25°C T =25°C J 1 0.0 0.5 1.0 1.5 Forward Voltage Drop - VFM (V) 1000 0 5 10 15 20 25 30 35 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 1E+01 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94446 Revision: 24-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 VSKDS220/030P Vishay High Power Products Schottky Rectifier, 110 A 100 Square wave (D=0.50) 80% rated Vr applied 140 Average Power Loss - (Watts) Allowable Case Temperature (°C) 160 120 100 DC 80 60 40 20 see note (1) 180° 120° 90° 60° 30° 80 60 DC 40 20 0 0 0 50 100 150 200 250 0 300 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM (A) Average Forward Current - IF(AV) (A) 100000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94446 Revision: 24-Apr-08 VSKDS220/030P Schottky Rectifier, 110 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS KD S 22 0 1 2 3 4 5 1 - Vishay HPP 2 - Circuit configuration: / 030 P 6 7 KC = ADD-A-PAK - 2 diodes in series 3 - S = Schottky diode 4 - Average rating (x 10) 5 - Product silicon identification 6 - Voltage rating (030 = 30 V) 7 - Lead (Pb)-free CIRCUIT CONFIGURATION (1) + (2) - (3) - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94446 Revision: 24-Apr-08 http://www.vishay.com/doc?95174 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1