ON Semiconductor MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage VEBO 5.0 6.0 Vdc Collector Current — Continuous 3 1 2 IC 600 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318–08, STYLE 6 SOT–23 (TO–236) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 — — Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX — 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO — — — — 0.01 0.01 10 10 µAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO — 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL — 20 nAdc 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 35 50 75 35 100 50 30 40 — — — — 300 — — — MMBT2222 MMBT2222A — — 0.4 0.3 MMBT2222 MMBT2222A — — 1.6 1.0 MMBT2222 MMBT2222A — 0.6 1.3 1.2 MMBT2222 MMBT2222A — — 2.6 2.0 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) only (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) hFE MMBT2222A MMBT2222 MMBT2222A Collector–Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) — VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) http://onsemi.com 2 Vdc MMBT2222LT1 MMBT2222ALT1 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz 250 300 — — — 8.0 — — 30 25 2.0 0.25 8.0 1.25 — — 8.0 4.0 50 75 300 375 5.0 25 35 200 — 150 — 4.0 Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A pF hie kΩ X 10–4 hre hfe — mhos hoe rb, Cc ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td — 10 tr — 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts — 225 tf — 60 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 3 ns ns MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 0 0 -2 V 1 kΩ < 2 ns CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% -14 V < 20 ns 200 1k CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 4 3.0 20 30 50 MMBT2222LT1 MMBT2222ALT1 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time 6.0 500 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 8.0 200 Figure 6. Turn–Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25°C Figure 9. Capacitances 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current–Gain Bandwidth Product http://onsemi.com 5 MMBT2222LT1 MMBT2222ALT1 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -2.5 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 6 500 MMBT2222LT1 MMBT2222ALT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total interface between the board and the package. With the design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when be the correct size to insure proper solder connection subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = • • TJ(max) – TA RθJA • The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. 150°C – 25°C PD = 556°C/W • = 225 milliwatts • The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. • • The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 100°C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. The soldering temperature and time shall not exceed 260°C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 7 MMBT2222LT1 MMBT2222ALT1 PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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