IRLS3813PbF HEXFET® Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters VDSS D ID (Silicon Limited) 30V 1.60m 1.95m 247A ID (Package Limited) 160A RDS(on) typ. max G S D S G Benefits Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant Base part number D2-Pak IRLS3813PbF G D S Gate Drain Source Standard Pack Package Type IRLS3813PbF D2Pak Form Quantity Tube Tape and Reel Left 50 800 Orderable Part Number IRLS3813PbF IRLS3813TRLPbF Absolute Maximum Rating Symbol VDS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA TSTG 1 www.irf.com © 2014 International Rectifier Max. 30 247 156 160 850 195 1.6 ± 20 Units V A W W/°C V -55 to + 150 °C 300 Max. 177 148 Typ. ––– ––– Submit Datasheet Feedback Units mJ A Max. 0.64 40 Units °C/W January 23, 2014 IRLS3813PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG Min. Typ. Max. Units ––– ––– ––– ––– 1.35 23 1.60 ––– ––– mV/°C Reference to 25°C, ID = 1mA 1.95 m VGS = 10V, ID = 148A 2.35 V VDS = VGS, ID = 150µA ––– ––– 1 ––– ––– ––– ––– ––– ––– ––– 0.9 100 100 -100 ––– V Conditions 30 µA nA VGS = 0V, ID = 250µA VDS =30V, VGS = 0V VDS =30V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 428 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 55 28 11 32 202 33 102 8020 1250 570 ––– 83 ––– ––– ––– ––– ––– ––– ––– ––– ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1560 ––– Coss eff.(TR) Output Capacitance (Time Related) ––– 1750 ––– VGS = 0V, VDS = 0V to 24V Min. Typ. Max. Units ––– ––– 247 ––– ––– 850 Conditions MOSFET symbol showing the integral reverse p-n junction diode. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) S nC ns pF A VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time ––– ––– 2.2 32 ––– ––– Qrr Reverse Recovery Charge ––– ––– ––– 33 24 26 ––– ––– ––– IRRM Reverse Recovery Current ––– 1.2 ––– V VDS = 10V, ID =148A ID = 148A VDS = 15V VGS = 4.5V VDD = 20V ID = 148A RG= 4.5 VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 24V TJ= 25°C,IS = 148A,VGS = 0V V/ns TJ = 150°C,IS =148A,VDS = 30V ns nC A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C VDD = 26V IF = 148A, di/dt = 100A/µs TJ = 25°C Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 16µH, RG = 50, IAS = 148A, VGS =10V. ISD 148A, di/dt 865A/µs, VDD V(BR)DSS, TJ 150°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf Pulse drain current is limited at 640A by source bonding technology. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014 IRLS3813PbF 1000 1000 100 BOTTOM 10 2.5V BOTTOM 100 2.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 10 Fig 2. Typical Output Characteristics 1000 TJ = 150°C 100 TJ = 25°C 10 VDS = 15V 60µs PULSE WIDTH ID = 148A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1 2 3 4 5 6 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) ID= 148A Coss = Cds + Cgd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 100 12 VDS = 24V 10 VDS = 15V 8 6 4 2 0 0.1 1 10 100 0 VDS , Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 40 80 120 160 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.7V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.7V 2.5V Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback January 23, 2014 IRLS3813PbF 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 1 VGS = 0V 0.4 0.8 1.2 1.6 100 1msec 10 1 Limited by Package 0.1 2.0 V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 280 Limited by Package ID, Drain Current (A) 240 200 160 120 80 40 0 75 100 1 125 36 Id = 1.0mA 35 34 33 32 31 30 -60 -40 -20 0 150 Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 800 EAS , Single Pulse Avalanche Energy (mJ) 0.6 0.5 0.4 Energy (µJ) 20 40 60 80 100 120 140 160 TJ , Temperature ( °C ) TC , Case Temperature (°C) 0.3 0.2 0.1 ID 17A 38A BOTTOM 148A TOP 600 400 200 0 0.0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 10 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 50 10msec VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 25 DC Tc = 25°C Tj = 150°C Single Pulse 0.1 0.1 0.0 100µsec www.irf.com © 2014 International Rectifier 30 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy Vs. Drain Current Submit Datasheet Feedback January 23, 2014 IRLS3813PbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Single Avalanche Current vs. pulse Width 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014 IRLS3813PbF RDS(on), Drain-to -Source On Resistance (m) 6 3.0 VGS(th), Gate threshold Voltage (V) ID = 148A 5 4 3 TJ = 125°C 2 1 TJ = 25°C 2.5 2.0 ID = 150µA ID = 250µA 1.5 ID = 1.0mA ID = 1A 1.0 0 0.5 2 4 6 8 10 12 14 16 18 20 -75 -50 -25 VGS, Gate -to -Source Voltage (V) Fig 15. Typical On-Resistance vs. Gate Voltage 75 100 125 150 IF = 148A VR = 26V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4 IRRM (A) 4 3 3 2 2 1 1 0 100 200 300 400 500 600 0 100 200 diF /dt (A/µs) 300 400 500 600 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Typical Recovery Current vs. dif/dt 90 140 120 IF = 99A VR = 26V 80 70 100 TJ = 25°C TJ = 125°C QRR (nC) QRR (nC) 50 5 IF = 99A VR = 26V 5 80 60 IF = 148A VR = 26V TJ = 25°C TJ = 125°C 60 50 40 40 30 20 20 0 100 200 300 400 500 600 0 100 Fig 19. Typical Stored Charge vs. dif/dt www.irf.com © 2014 International Rectifier 200 300 400 500 600 diF /dt (A/µs) diF /dt (A/µs) 6 25 Fig 16. Threshold Voltage vs. Temperature 6 IRRM (A) 0 TJ , Temperature ( °C ) Fig 20. Typical Stored Charge vs. dif/dt Submit Datasheet Feedback January 23, 2014 IRLS3813PbF Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs VD Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback January 23, 2014 IRLS3813PbF D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014 IRLS3813PbF D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial Qualification Level D2Pak MSL1 RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014