Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2300 MHz 16.0 31.9 6.1 --37.1 2350 MHz 16.3 30.9 6.4 --37.9 2400 MHz 16.6 31.2 6.3 --37.5 2300--2400 MHz, 28 W AVG., 28 V LTE LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW (1) Output Power (2 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. CASE 465--06, STYLE 1 NI--780 MRF8S23120HR3 CASE 465A--06, STYLE 1 NI--780S MRF8S23120HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (2,3) TJ 225 °C CW 109 0.52 W W/°C Symbol Value (3,4) Unit CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 28 W CW, 28 Vdc, IDQ = 800 mA, 2400 MHz Case Temperature 80°C, 120 W CW(1), 28 Vdc, IDQ = 800 mA, 2400 MHz RθJC 0.50 0.47 °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S23120HR3 MRF8S23120HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 172 μAdc) VGS(th) 1.0 1.8 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) VGS(Q) 1.8 2.6 3.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.72 Adc) VDS(on) 0.1 0.15 0.3 Vdc Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 14.5 16.0 17.5 dB Drain Efficiency ηD 29.0 31.9 — % PAR 5.7 6.1 — dB ACPR — --37.1 --35.0 dBc IRL — --12 --7 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2300 MHz 16.0 31.9 6.1 --37.1 --12 2350 MHz 16.3 30.9 6.4 --37.9 --19 2400 MHz 16.6 31.2 6.3 --37.5 --18 1. Part internally matched both on input and output. (continued) MRF8S23120HR3 MRF8S23120HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2300--2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 107 — — 13 — W IMD Symmetry @ 84 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 62 — MHz Gain Flatness in 100 MHz Bandwidth @ Pout = 28 W Avg. GF — 0.6 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.002 — dB/°C ∆P1dB — 0.008 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (1) MHz 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 3 B1 C11 + C9 C16 C8 C14 C6* C2 C5 C13 R1 C1 C15 C3 CUT OUT AREA C4 C7* C10 C12 MRF8S23120H/S Rev. 0 *C6 and C7 are mounted vertically. Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead MPZ2012S300A TDK C1, C4 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C2, C15 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC C3 1.8 pF Chip Capacitor ATC100B1R5BT500XT ATC C5, C6, C7 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C8 3.3 μF, 100 V Chip Capacitor C5750X7R2A335MT TDK C9, C10, C11, C12, C14 10 μF, 50 V Chip Capacitors C5750X7R1H106KT TDK C13 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp C16 330 nF, 100 V Chip Capacitor C3225JB2A334KT TDK R1 4.75 Ω, 1/4 W Chip Resistor CRCW12064R75FNEA Vishay PCB 0.030″, εr = 2.55 AD255A Arlon MRF8S23120HR3 MRF8S23120HSR3 4 RF Device Data Freescale Semiconductor 32 31 16.4 30 Gps PARC --34 --10 16 --35 --15 15.8 --36 16.2 IRL 15.6 --37 ACPR 15.4 15.2 2290 2305 --38 2320 2335 2350 2365 2380 2395 --39 2410 --20 --25 --30 --35 --1 --1.2 --1.4 --1.6 --1.8 PARC (dB) ηD 16.6 33 ACPR (dBc) Gps, POWER GAIN (dB) 16.8 34 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 800 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 17 IRL, INPUT RETURN LOSS (dB) 17.2 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg. --10 VDD = 28 Vdc, Pout = 84 W (PEP), IDQ = 800 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz --20 IM3--U --30 IM3--L IM5--U --40 IM5--L --50 IM7--L IM7--U --60 1 10 100 TWO--TONE SPACING (MHz) 16.6 0 16.2 15.8 15.4 15 14.6 VDD = 28 Vdc, IDQ = 800 mA, f = 2350 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --1 --1 dB = 26.5 W ACPR --4 --5 25 --25 Gps PARC 20 --3 dB = 48.5 W Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15 50 30 --2 dB = 36.5 W --3 --20 40 ηD --2 60 35 45 55 --30 --35 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing --40 10 --45 0 --50 65 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 15.5 ηD 2300 MHz 2350 MHz 2300 MHz VDD = 28 Vdc, IDQ = 800 mA 2400 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 13.5 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2400 MHz 2350 MHz ACPR 1 50 --10 30 2300 MHz 11.5 0 40 14.5 12.5 60 20 10 0 100 10 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 2350 MHz 2400 MHz 16.5 Gps ηD, DRAIN EFFICIENCY (%) 17.5 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 24 VDD = 28 Vdc Pin = 0 dBm IDQ = 800 mA 10 Gain 16 0 12 --10 IRL 8 --20 4 --30 0 1800 1900 2000 2100 2200 2300 2400 2500 IRL (dB) GAIN (dB) 20 --40 2600 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S23120HR3 MRF8S23120HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg. f MHz Zsource Ω Zload Ω 2290 8.41 -- j0.97 1.86 -- j4.43 2305 8.58 -- j0.55 1.83 -- j4.28 2320 8.78 -- j0.14 1.80 -- j4.14 2335 8.99 + j0.29 1.77 -- j4.01 2350 9.21 + j0.72 1.74 -- j3.88 2365 9.45 + j1.17 1.72 -- j3.77 2380 9.71 + j1.62 1.69 -- j3.66 2395 9.99 + j2.10 1.66 -- j3.54 2410 10.28 + j2.60 1.65 -- j3.43 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 57 Pout, OUTPUT POWER (dBm) 56 Ideal 2300 MHz 2400 MHz 55 54 2350 MHz 53 52 Actual 51 2300 MHz 50 2400 MHz 2350 MHz 49 48 47 46 29 30 31 32 33 35 34 36 37 38 39 40 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2300 152 51.8 185 52.7 2350 150 51.8 181 52.6 2400 147 51.7 177 52.5 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2300 P1dB 4.03 -- j5.45 2.24 + j0.08 2350 P1dB 4.63 -- j6.15 2.21 + j0.35 2400 P1dB 5.57 -- j5.96 2.36 + j0.47 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S23120HR3 MRF8S23120HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 9 MRF8S23120HR3 MRF8S23120HSR3 10 RF Device Data Freescale Semiconductor MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 11 MRF8S23120HR3 MRF8S23120HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2010 Description • Initial Release of Data Sheet MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S23120HR3 MRF8S23120HSR3 Document Number: MRF8S23120H Rev. 0, 11/2010 14 RF Device Data Freescale Semiconductor