N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description Features The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) < 0.85Ω @VGS = 10V MDP9N50 is suitable device for SMPS, HID and general purpose applications. Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit VDSS 500 V Drain-Source Voltage Gate-Source Voltage VGSS ±30 V 9.0 A 5.5 A 36 A 120 0.95 W W/ oC Dv/dt 4.5 V/ns EAS 300 mJ TJ, Tstg -55~150 TC=25oC Continuous Drain Current ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation PD Derate above 25 oC Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case(1) Dec 2009. Version 1.1 1 Symbol Rating RθJA 62.5 RθJC 1.05 Unit o C/W MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V MDP9N50 Part Number Temp. Range Package Packing RoHS Status MDP9N50TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA 0.72 0.85 Ω 7 - S Drain-Source ON Resistance Forward Transconductance RDS(ON) VGS = 10V, ID = 4.5A gfs VDS = 30V, ID = 4.5A - V Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 7.6 Input Capacitance Ciss - 780 VDS = 400V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz - 19 - 5.7 Reverse Transfer Capacitance Crss - 4.0 Output Capacitance Coss - 100 Turn-On td(on) - 18 tr - 34 - 38 - 27 - 9.0 Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25Ω(3) tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source IS Diode Forward Current Source-Drain Diode Forward VSD Voltage Body Diode Reverse Recovery trr Time Body Diode Reverse Recovery Qrr Charge IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3) - nC pF ns - A 1.4 V - 272 ns - 2.0 µC Note : 1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=6.7mH, IAS=9.0A, Dec 2009. Version 1.1 VDD=50V, , Rg =25Ω, Starting TJ=25°C 2 MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V Ordering Information Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V 1.2 1.1 RDS(ON) [Ω ] ID,Drain Current [A] 10 1 1.0 VGS=10.0V 0.9 0.8 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 0.1 0.1 0.7 0.6 1 10 0 5 VDS,Drain-Source Voltage [V] 10 15 20 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 1.8 ※ Notes : 1. VGS = 10 V 2. ID = 5 A 1.6 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance VGS=20V 1.4 VGS=10V 1.2 VGS=4.5V 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ IDR Reverse Drain Current [A] * Notes ; 1. VDS=30V ID [A] 10 150℃ 25℃ 150℃ 10 25℃ 1 -55℃ 0.1 0.0 1 4 5 6 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] 8 VGS [V] Fig.5 Transfer Characteristics Dec 2009. Version 1.1 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V 1.3 100V 250V 400V 1200 8 Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 1400 ※ Note : ID = 9.0A MDP9N50 N-channel MOSFET 500V 10 6 4 Ciss 1000 800 600 400 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 0 2 4 6 8 10 12 14 16 18 20 0 0.1 22 1 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics -ID, Drain Current [A] 10 Fig.8 Capacitance Characteristics 10 2 Operation in This Area is Limited by R DS(on) 10 µs 8 100 µs 1 ms 1 ID, Drain Current [A] 10 10 ms 100 ms DC 10 10 10 VDS, Drain-Source Voltage [V] 0 6 4 -1 2 Single Pulse TJ=Max rated TC=25℃ 10 0 -2 25 10 -1 10 0 10 1 10 50 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 10000 0 10 single Pulse RthJC = 1.05℃/W TC = 25℃ D=0.5 8000 0.2 Power (W) Zθ JC(t), Normalized Thermal Response 75 2 0.1 -1 10 0.05 0.02 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=1.05℃/W 0.01 single pulse 6000 4000 2000 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec 2009. Version 1.1 1E-4 4 MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V Physical Dimension TO220, 3L Dimensions are in millimeters, unless otherwise specified Dec 2009. Version 1.1 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec 2009. Version 1.1 6 MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V Worldwide Sales Support Locations