NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS (Units in mm) NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 +0.1 0.3 -0 3 1 +0.1 0.2 -0 DESCRIPTION NEC's NE687M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE687 is also available in six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE687M03 2SC5436 M03 UNITS MIN TYP GHz GHz 9 7 14 12 fT Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz NF Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz dB dB Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz dB dB |S21E|2 hFE2 Forward Current Gain at VCE = 2 V, IC = 20 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 μA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μA CRE3 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz pF 1.3 1.3 8.5 6 MAX 2 2 10 9.0 70 130 0.1 0.1 0.4 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE687M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 30 IC Collector Current mA PT Total Power Dissipation mW 90 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER QUANTITY NE687M03-A NE687M03-T1-A Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 20 200 µA 180 µA 160 µA 15 140 µA 120 µA 10 100 µA 80 µA 60 µA 5 D.C. CURRENT GAIN vs. COLECTOR CURRENT 500 DC Current Gain, hFE Collector Current, IC (mA) 25 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 200 100 VCE = 2 V VCE = 1 V 50 20 40 µA IB = 20 µA 0 0 2.2 2.4 10 2.6 Collector to Emmiter Voltage, VCE (V) Collector Current, IC (mA) VCE = 2V 40 30 20 10 0 0.5 Base to Emmiter Voltage, VBE (V) 2 5 10 20 Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 1 1.0 50 100 NE687M03 NE687M03 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS 302.3e-18 MJC 0.53 BF 104 XCJC 0.27 NF 1.038 CJS 0 VAF 10 VJS 0.75 IKF 0.370 MJS 0 ISE 1e-6 FC 0.37 NE 31.19 TF 5e-12 BR 17.54 XTF 8 NR 1.023 VTF 0.06 VAR 30 ITF 1.0 IKR 8.369e-3 PTF 69.1 ISC 81.93e-12 TR 1.e-9 NC 4.986 EG 1.11 RE 0.80 XTB 0 RB 11.10 XTI 3 RBM 2.46 KF 0 IRB 17e-3 AF 1 RC 4.477 CJE 0.415e-12 VJE 0.68 MJE 0.53 CJC 0.102e-12 VJC 0.8 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX 687M03 0.26e-12 0.19e-12 0.4e-9 0.7e-9 0.08e-12 0.08e-12 0.12e-9 LCX LEX 0.10e-9 0.12e-9 MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 30 mA Date: 11/98 hFE = 108 at 2 V, 20 mA (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/26/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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