DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification Supersedes data of 1999 May 28 1999 Sep 01 Philips Semiconductors Product specification NPN general purpose double transistor BC846S FEATURES • Two transistors in one package • Reduces number of components and board space handbook, halfpage • No mutual interference between the transistors. 6 6 5 5 4 4 TR2 APPLICATIONS TR1 • General purpose switching and small signal amplification. 1 2 3 1 Top view 2 3 MAM340 DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. Fig.1 Simplified outline (SC-88) and symbol. PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MARKING TYPE NUMBER MARKING CODE BC846S 4Ft LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 65 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Refer to SC-88 (SOT363) standard mounting conditions. 1999 Sep 01 2 Philips Semiconductors Product specification NPN general purpose double transistor BC846S THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 416 K/W note 1 Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor − − ICBO collector cut-off current IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V 110 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 100 mV IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 770 − mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Sep 01 3 15 nA Philips Semiconductors Product specification NPN general purpose double transistor MGL738 103 handbook, halfpage BC846S MGL739 1200 handbook, halfpage VBE (mV) VCEsat (mV) 1000 (1) 800 (2) 102 (1) 600 (2) (3) (3) 400 10 10−1 1 102 10 IC (mA) 200 10−1 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 Collector-emitter saturation voltage as a function of collector current; typical values. 10 1 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MGL740 400 handbook, full pagewidth hFE (1) 300 (2) 200 (3) 100 0 10−1 VCE = 5 V. (1) Tamb = 150 °C. 1 10 102 (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. 1999 Sep 01 4 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose double transistor BC846S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 Sep 01 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose double transistor BC846S DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Sep 01 6 Philips Semiconductors Product specification NPN general purpose double transistor NOTES 1999 Sep 01 7 BC846S Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/02/pp8 Date of release: 1999 Sep 01 Document order number: 9397 750 06102