DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • 30V • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • Backlighting Power Management Functions DC-DC Converters • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) POWERDI3333-8 Pin 1 S S S G D D D D Top View Bottom View 1 8 2 7 3 6 4 5 Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3024SFG-7 DMN3024SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW ADVANCE INFORMATION Product Summary N34 N34 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 1 of 7 www.diodes.com May 2012 © Diodes Incorporated ADVANCE INFORMATION DMN3024SFG Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 7) Repetitive Avalanche Energy (Note 7) ID Value 30 ±25 7.5 6.0 ID 10.5 8.5 A ID 6.3 5.0 A 8.5 7.6 60 9 12 ID IDM IAS EAS Units V V A A A A mJ Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 0.9 0.5 145 74 2.2 1.4 58 31 11 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7 .UIS in production with L = 0.3mH, TJ = 25°C POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 2 of 7 www.diodes.com May 2012 © Diodes Incorporated DMN3024SFG Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250 μA VDS = 30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.3 15 24 11 0.69 2.4 23 33 1 V Static Drain-Source On-Resistance 1.0 - VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 10.0A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf 0.4 - 479 97 61 1.1 5.0 10.5 1.8 1.6 2.9 7.9 14.6 3.1 1.6 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 10A VGS = 10V, VDS = 15V, RG = 3Ω, RL= 1.5Ω, 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 20 30 VGS = 10V VDS = 5V 25 VGS = 4.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics TA = 25°C unless otherwise specified VGS = 4.0V VGS = 3.5V 15 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 3 of 7 www.diodes.com May 2012 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0.04 VGS = 10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 1.7 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 20 2.0 18 1.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN3024SFG 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 14 12 TA = 25°C 10 8 6 4 0.8 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 4 of 7 www.diodes.com May 2012 © Diodes Incorporated DMN3024SFG 10 1,000 VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 4 2 0 30 VDS = 15V ID = 10A 6 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 12 100 P(PK), PEAK TRANSIENT POIWER (W) 90 Single Pulse RθJA = 61° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Ciss D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 54°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 5 of 7 www.diodes.com May 2012 © Diodes Incorporated DMN3024SFG ADVANCE INFORMATION Package Outline Dimensions POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMN3024SFG Document number: DS35439 Rev. 3 - 2 6 of 7 www.diodes.com May 2012 © Diodes Incorporated DMN3024SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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