B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement • Middle surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. ~ TO-269AA (MBS) PRIMARY CHARACTERISTICS MECHANICAL DATA Package TO-269AA (MBS) IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 30 A IR 5 μA VF at IF = 0.5 A 1.0 V TJ max. 150 °C Diode variations Quad Case: TO-269AA (MBS) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B2S B2 B4 B6 Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V 200 400 600 V Device marking code B4S B6S UNIT Maximum DC blocking voltage VDC Maximum average forward output rectified current on glass-epoxy PCB (fig. 1) IF(AV) 0.5 (1) A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A I2t 5.0 A2s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Note (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 0.5 A Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 °C Typical junction capacitance per diode 4.0 V, 1 MHz Revision: 19-Aug-13 TA = 25 °C SYMBOL VALUES UNIT VF 1.0 V IR CJ 5.0 100 13 μA pF Document Number: 88893 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B2S, B4S, B6S www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) B2S B4S RJA 90 RJL 40 B6S UNIT °C/W Note (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.22 80 3000 13" diameter paper tape and reel B2S-E3/80 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 0.8 0.7 0.6 0.5 Glass Epoxy PCB 0.4 0.3 0.2 0.1 Resistive or Inductive Load 0 0 20 40 60 80 100 120 140 TJ = 150 °C 1 0.1 0.01 0.4 160 0.5 Ambient Temperature (°C) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve for Output Rectified Current Fig. 3 - Typical Forward Voltage Characteristics Per Diode 1000 Instantaneous Reverse Leakage Current (µA) 35 Peak Forward Surge Current (A) TJ = 25 °C TJ = 125 °C 30 25 f = 50 Hz 20 15 10 5 1.0 Cycle TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 1 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 19-Aug-13 Document Number: 88893 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Junction Capacitance (pF) 100 10 1 0.1 10 1 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.029 (0.74) 0.017 (0.43) TO-269AA (MBS) Mounting Pad Layout 0.023 MIN. (0.58 MIN.) 0.161 (4.10) 0.144 (3.65) 0.272 (6.90) 0.252 (6.40) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0 to 8° 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.106 (2.70) 0.090 (2.30) 0.114 (2.90) 0.094 (2.40) Revision: 19-Aug-13 0.0075 (0.19) 0.0065 (0.16) 0.038 (0.96) 0.019 (0.48) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.105 (2.67) 0.095 (2.41) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) Document Number: 88893 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000