AMD AM29F016B-1 16 megabit (2 m x 8-bit) cmos 5.0 volt-only, sector erase flash memory-die revision 1 Datasheet

SUPPLEMENT
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
■ Manufactured on 0.35 µm process technology
■ High performance
— 120 ns access time
■ Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current (standard access
time to active mode)
■ Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■ Embedded Algorithms
■ Minimum 100,000 write/erase cycles guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■ Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■ Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
2/17/98
Publication# 21551 Rev: A Amendment/+1
Issue Date: February 1998
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F016B in Known Good Die (KGD) form is a
16 Mbit, 5.0 volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. A sector is typically
erased and verified within one second. The device is
erased when shipped from the factory.
Am29F016B Features
The hardware sector group protection feature disables
both program and erase operations in any combination
of the eight sector groups of memory. A sector group
consists of four adjacent sectors.
The Am29F016B is a 16 Mbit, 5.0 volt-only Flash
memory organized as 2,097,152 bytes of 8 bits each.
The 2 Mbytes of data are divided into 32 sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F016B is manufactured using AMD’s 0.35 µm process technology.
This device is designed to be programmed in-system
with the standard system 5.0 volt VCC supply. A 12.0
volt V P P is n ot required for program or erase
operations. The device can also be programmed in
standard EPROM programmers.
The standard device offers an access time of 120 ns,
allowing high-speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), write enable
(WE#), and output enable (OE#) controls.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 volt Flash or EPROM devices.
The device is programmed by executing the program
command sequence. This invokes the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The device is erased by executing
the erase command sequence. This invokes the
Embedded Erase algorithm—an internal algorithm that
automatically preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from,
or program data to, a sector that is not being erased.
True background erase can thus be achieved.
The device requires only a single 5.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the program
and erase operations. A low VCC detector automatically
inhibits write operations during power transitions. The
host system can detect whether a program or erase
cycle is complete by using the RY/BY# pin, the DQ7
(Data# Polling) or DQ6 (toggle) status bits. After a
program or erase cycle has been completed, the
device automatically returns to the read mode.
A hardware RESET# pin terminates any operation in
progress. The internal state machine is reset to the
read mode. The RESET# pin may be tied to the system
reset circuitry. Therefore, if a system reset occurs
during either an Embedded Program or Embedded
Erase algorithm, the device is automatically reset to the
read mode. This enables the system’s microprocessor
to read the boot-up firmware from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
hi g h e st leve l s o f q u a li ty, r e li a bi li t y, a n d co s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F016B data sheet, PID 21444, for full
electrical specifications on the Am29F016B in KGD
form.
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F016B KGD
Speed Option (VCC = 5.0 V ± 10%)
-120
Max Access Time, tACC (ns)
120
Max CE# Access, tCE (ns)
120
Max OE# Access, tOE (ns)
50
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2/17/98
S U P P L E M E N T
DIE PHOTOGRAPH
Orientation relative
to leading edge of
tape and reel
Orientation
relative to top
left corner of
Gel-Pak
DIE PAD LOCATIONS
8
7
6
5
4
3
2
1
37 36
35 34 33
32 31 30
29
9
AMD logo location
10
28
1112 13 14 15 16 17 18 19
2/17/98
20 21 22 23 24 25 26 27
Am29F016B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
VCC
DQ4
DQ5
DQ6
DQ7
RY/BY#
OE#
WE#
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE#
VCC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
Pad Center (mils)
X
Y
0.00
0.00
–10.60
0.00
–24.00
0.00
–37.20
0.00
–50.50
0.00
–68.90
0.00
–84.20
0.00
–111.80
0.00
–119.30
–8.50
–119.30
–245.30
–109.10
–258.20
–100.20
–258.20
–88.20
–258.20
–79.00
–258.20
–67.00
–258.20
–57.80
–258.20
–45.80
–258.20
–36.60
–258.20
–27.20
–258.20
45.00
–258.20
57.20
–258.20
69.20
–258.20
78.40
–258.20
90.60
–258.20
99.80
–258.20
112.00
–258.20
121.10
–258.20
131.20
–245.30
131.20
–8.50
123.80
0.00
111.90
0.00
102.40
0.00
74.40
0.00
61.20
0.00
47.90
0.00
34.70
0.00
21.70
0.00
Pad Center (millimeters)
X
Y
0.00
0.00
–0.27
0.00
–0.61
0.00
–0.94
0.00
–1.28
0.00
–1.75
0.00
–2.14
0.00
–2.84
0.00
–3.03
–0.22
–3.03
–6.23
–2.77
–6.56
–2.55
–6.56
–2.24
–6.56
–2.01
–6.56
–1.70
–6.56
–1.47
–6.56
–1.16
–6.56
–0.93
–6.56
–0.69
–6.56
1.14
–6.56
1.45
–6.56
1.76
–6.56
1.99
–6.56
2.30
–6.56
2.53
–6.56
2.84
–6.56
3.08
–6.56
3.33
–6.23
3.33
–0.22
3.14
0.00
2.84
0.00
2.60
0.00
1.89
0.00
1.55
0.00
1.22
0.00
0.88
0.00
0.55
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F016B
-120
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C
=
Commercial (0°C to +70°C)
I
=
Industrial (–40°C to +85°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP =
Waffle Pack
100 die per 5 tray stack
DG =
Gel-Pak® Die Tray
294 die per 6 tray stack
DT =
Surftape™ (Tape and Reel)
1600 per 7-inch reel
DW =
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order
quantity
SPEED OPTION
See Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Read, Program, and Erase
Valid Combinations
Am29F016B-120
2/17/98
DPC 1, DPI 1,
DGC 1, DGI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F016B Known Good Die
5
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F016B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition,
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1.
6
AMD KGD Product Test Flow
Am29F016B Known Good Die
2/17/98
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions, X x Y . . . . . . . . . 267 mils x 280 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . 6.78 mm x 7.11 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Manufacturing ID . . . . . . . . . . . . . . . . . . . . . 98163DK
Bond Pad Size . . . . . . . . . . . . . X3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 µm x 100 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Pad Area Free of Passivation . . . . . . . . . .15.52 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm 2
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Fabrication Process . . . . . . . . . . . . . . . . . . . . . . CS39
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
SPECIAL HANDLING INSTRUCTIONS
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Processing
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Junction Temperature Under Bias . .TJ (max) = 130°C
Storage
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
2/17/98
Am29F016B Known Good Die
7
S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does not
extend to die which has been affixed onto a board or
substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F.O.B. AMD’s factory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The aforementioned provisions do not extend the
original warranty period of any article which has either
been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD
ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE
REMEDY FOR THE FURNISHING OF DEFECTIVE
OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN AN Y EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF
USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD Products which are the subject hereof, AMD assumes no
responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as components in life support appliances, devices or
systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale.
REVISION SUMMARY FOR AM29F016B KGD
Valid Combinations
Physical Specifications
Deleted designators in base part number to top and
bottom boot.
Clarified X and Y die dimensions
Manufacturing Information
Deleted references to top and bottom boot
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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