BD675 SERIES NPN SILICON POWER DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER TO-126 CASE BD675 MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A Collector-Base Voltage VCBO 45 Collector-Emitter Voltage VCEO 45 Emitter-Base Voltage ICEO BD683 120 UNITS V 80 100 120 V 4.0 A IB PD 100 mA 40 W TJ, Tstg ΘJC -65 to +150 °C 3.13 °C/W Power Dissipation ELECTRICAL SYMBOL ICBO ICBO BD681 100 5.0 Continuous Base Current Thermal Resistance 60 BD679 BD679A 80 VEBO IC Continuous Collector Current Operating and Storage Junction Temperature BD677 BD677A 60 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=Rated VCBO VCB=Rated VCBO, TC=100°C V MAX 200 UNITS µA 2.0 mA IEBO VCE=½Rated VCEO VEB=5.0V BVCEO IC=50mA (BD675, BD675A) 45 V BVCEO IC=50mA (BD677, BD677A) 60 V BVCEO IC=50mA (BD679, BD679A) 80 V BVCEO IC=50mA (BD681) 100 V BVCEO IC=50mA (BD683) 120 VCE(SAT) IC=1.5A, IB=30mA (Non-A) IC=2.0A, IB=40mA (A) VCE=3.0V, IC=1.5A (Non-A) VCE(SAT) VBE(ON) VBE(ON) hFE hFE hfe VCE=3.0V, VCE=3.0V, IC=2.0A (A) IC=1.5A (Non-A) VCE=3.0V, IC=2.0A (A) VCE=3.0V, IC=1.5A, f=1.0MHz 500 µA 2.0 mA V 2.5 V 2.8 V 2.5 V 2.5 V 750 750 1.0 R1 (14-June 2010) BD675 SERIES NPN SILICON POWER DARLINGTON TRANSISTOR TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (14-June 2010) w w w. c e n t r a l s e m i . c o m