CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9N50FP Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 1/ 9 BVDSS : 500V RDS(ON) : 0.78Ω typ. ID : 8.5A Description The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Ballast • Inverter Ordering Information Device MTN9N50FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Symbol Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 2/ 9 Outline TO-220FP MTN9N50FP G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 500 ±30 8.5* 5.1* 34* 290 8 12.5 3.5 V V A A A mJ A mJ V/ns TL 300 °C 38.5 0.3 -55~+150 W W/°C °C PD Tj, Tstg *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=8A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. 4. IAS=8A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. MTN9N50FP CYStek Product Specification Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 3/ 9 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.25 62.5 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 500 2.0 - 0.6 5 0.78 4.0 ±100 1 25 0.85 V V/°C V S nA Ω VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=4A VGS=±30 VDS =500V, VGS =0 VDS =400V, VGS =0, Tj=125°C VGS =10V, ID=4A 30 5 16 14 23 49 20 1411 117 26 - nC ID=8A, VDD=250V, VGS=10V ns VDD=250V, ID=8A, VGS=10V, RG=10Ω pF VGS=0V, VDS=25V, f=1MHz 460 4.2 1.5 8 32 - V IS=8A, VGS=0V A VD=VG=0, VS=1.3V ns μC VGS=0, IF=8A, dI/dt=100A/μs *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 4/ 9 Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 2 20 15V 10V 9V Static Drain-Source On-state Resistance-RDS(on)(Ω) Drain Current - ID(A) 16 1.8 7V 12 6V 8 5.5V 4 1.6 1.4 1.2 1 0.8 0.6 0.2 0 -100 0 0 10 20 30 40 Drain-Source Voltage -VDS(V) 50 ID=4A, VGS=10V 0.4 5V VGS=4.5V 60 -50 200 20 1.5 VDS=30V Ta=25°C VGS=10V Drain Current-ID(on)(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) 150 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 1 0.5 16 12 VDS=10V 8 4 0 0 0.1 1 10 Drain Current-ID(A) 0 100 5 10 15 Gate-Source Voltage-VGS(V) 20 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Ta=25°C VGS=0V Forward Current-IF(A) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 0 50 100 Ambient Temperature-Ta(°C) ID=4A 10 Ta=150°C Ta=25°C 1 0.1 0 MTN9N50FP 2 4 6 8 10 Gate-Source Voltage-VGS(V) 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 Drain-Source Breakdown Voltage BVDSS(V) 650 Capacitance-(pF) Ciss 1000 Coss 100 Crss 600 550 500 ID=250μA, VGS=0V f=1MHz 10 0 5 10 15 20 25 Drain-to-Source Voltage-VDS(V) 450 -100 30 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) Gate Charge Characteristics Maximum Safe Operating Area 12 100 10μs 10 100μs 1ms 1 10ms Operation in this area is limited by RDS(ON) 0.1 100ms DC Tc=25°C, Tj=150°C Single pulse Gate-Source Voltage---VGS(V) Drain Current --- ID(A) VDS=90V 10 VDS=250V 8 VDS=360V 6 4 2 ID=8A 0 0.01 1 10 100 Drain-Source Voltage -VDS(V) 1000 0 6 12 18 24 30 36 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature 10 Maximum Drain Current---ID(A) 9 8 7 6 5 4 3 2 1 0 25 50 75 100 125 150 175 Case Temperature---TC(°C) MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 6/ 9 Characteristic Curves(Cont.) Transient Thermal Response Curves 10 D=0.5 ZθJC(t), Thermal Response 1 0.2 0.1 0.05 0.1 1.ZθJC(t)=3.25 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 7/ 9 Test Circuit and Waveforms MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 8/ 9 Test Circuit and Waveforms(Cont.) MTN9N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 9/ 9 TO-220FP Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN9N50FP CYStek Product Specification