NTE NTE365 Silicon npn transistor rf power output po = 15w @ 512mhz Datasheet

NTE365
Silicon NPN Transistor
RF Power Output
PO = 15W @ 512MHz
Description:
The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 15 Watts
Minimum Gain = 7.8dB
Efficiency = 55%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line
and Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
IC = 20mA, IB = 0
16
–
–
V
V(BR)CES
IC = 20mA, VBE = 0
36
–
–
V
V(BR)EBO
IE = 5mA, IC = 0
4
–
–
V
VCE = 15V, VBE = 0, TC = +25°C
–
–
5.0
mA
ICES
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
hFE
VCE = 5V, IC = 1A
30
70
150
Cob
VCB = 12.5V, IE = 0, f = 1MHz
–
40
60
pF
GPE
POUT = 15W, VCC = 12.5V, f = 470MHz
7.8
8.5
–
dB
Collector Efficiency
η
POUT = 15W, VCC = 12.5V, f = 470MHz
55
60
–
%
Output Mismatch Stress
ψ
VCC = 16V, Pin = 3W, f = 470MHz,
VSWR = 20:1, All Phase Angles
Dynamic Characteristics
Output Capacitance
Functional Test
Common–Emitter Amplifier Power Gain
No Degradation in
Output Power
.215 (5.48)
.205 (5.18)
.122 (3.1) Dia
E
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)
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