BSS 124 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type BSS 124 Ordering Code Q67000-S172 S Tape and Reel Information E6288 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage Values 400 V DGR RGS = 20 kΩ 400 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 37 °C A 0.12 IDpuls DC drain current, pulsed TA = 25 °C 0.48 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1 1 12/05/1997 BSS 124 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 400 - - 1.5 2 2.5 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = 400 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 400 V, VGS = 0 V, Tj = 125 °C - 8 50 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 0.12 A Semiconductor Group nA - 2 16 28 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance 0.1 pF - 90 120 - 10 15 - 4 6 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.19 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω Rise time - 5 8 - 10 15 - 18 25 - 15 20 tr VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.12 - - 0.48 VSD VGS = 0 V, IF = 0.24 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.85 1.3 12/05/1997 BSS 124 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 1.2 0.13 W A 0.11 1.0 Ptot ID 0.9 0.10 0.09 0.8 0.08 0.7 0.07 0.6 0.06 0.5 0.05 0.4 0.04 0.3 0.03 0.2 0.02 0.1 0.01 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 124 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.28 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 90 Ptot = 1W A l h i kj gf e d 0.24 ID a Ω c 0.22 VGS [V] a 2.5 0.20 0.18 0.16 0.14 0.12 0.10 b 0.08 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 b RDS (on) 70 60 50 40 30 c d ef g ikh j 20 0.06 0.04 10 VGS [V] = a 0.02 0.00 0 2 4 6 8 10 V 0 0.00 14 a 2.5 3.0 b 3.5 c 4.0 0.04 d 4.5 e f 5.0 5.5 0.08 0.12 g 6.0 h i 7.0 8.0 0.16 j 9.0 k 10.0 0.20 VDS A 0.26 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.32 0.30 A S ID gfs 0.24 0.20 0.20 0.16 0.15 0.12 0.10 0.08 0.05 0.04 0.00 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0.00 0.00 0.05 0.10 0.15 A 0.25 ID 6 12/05/1997 BSS 124 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.12 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 70 4.6 Ω V 60 4.0 RDS (on) 55 VGS(th) 50 3.6 3.2 45 2.8 40 2.4 98% 35 98% typ 30 2.0 25 1.6 2% typ 20 1.2 15 0.8 10 0.4 5 0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 10 0 pF A IF C 10 2 10 -1 Ciss 10 1 10 -2 Coss Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 12/05/1997