MUR820(F) THRU MUR860(F) HD TO84 TO-220 Plastic-Encapsulate Diodes Super Fast Rectifier Features ●Io 8A ITO- 220 AC TO- 220 AC ●VRRM 200V-600V ●High surge current capability Applications ● Rectifier Marking 1 ● MUR8XX(F) XX : From 20 To 60 1 2 1 Item Symbol Unit 2 2 MUR8-(F) Test Conditions 20 40 60 200 400 600 Repetitive Peak Reverse Voltage VRRM V Average Rectified Output Current Io A 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 8.0 IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 120 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Surge(Non-repetitive)Forward Current Junction Temperature Storage Temperature Electrical Characteristics (Ta=25℃ Unless otherwise specified) MUR8-(F) Item Peak Forward Voltage Peak Reverse Current Reverse Recovery Time Thermal Resistance(Typical) (Note1) Typical Junction Capacitance(Note2) Symbol Unit VF V IRRM1 IRRM2 uA Test Condition IF =8.0A V RM=VRRM 20 40 60 0.98 1.3 1.7 Ta =25℃ Ta =125℃ IF=0.5A IRM=1A IRR=0.25A 10 500 Trr ns RθJ-A ℃/W 30 Cj pF 150 50 NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 12 10 210 180 8.3ms Single Half Sine Wave JEDEC Method 150 8 120 6 90 4 60 2 30 0 50 70 90 110 130 150 Tc(℃) 0 1 10 100 Number of Cycles IR(uA) IF(A) FIG3:Instantaneous Forward Voltage 60 40 FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 20 100 MUR820(F) 10 Tj=125℃ 10 5.0 Tj=100℃ MUR840(F) 1.0 1.0 MUR860(F) Tj=25℃ 0.1 0.5 0.2 0.1 0.01 0 Ta=25℃ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.2 2.0 20 40 60 80 2.4 VF(V) 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D t rr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 TO- 220 TO- 220 AC 0.185(4.70) 0.175(4.44) 0.412(10.5) MAX 0.113(2.87) 0.103(2.62) 0.055(1.40) 0.045(1.14) 0.270(6.86) 0.230(5.84) Φ 0.154(3.91) Φ 0.148(3.74) 0.594(15.1) 0.587(14.9) 1 2 0.16(4.06) 0.14(3.56) 0.025(0.64) 0.014(0.35) 0.037(0.94) 0.027(0.68) 0.56(14.22) 0.53(13.46) 0.11(2.79) 0.10(2.54) 0.210(5.34) 0.190(4.82) Unit inch ( mm ) ITO- 220 AC JSHD JSHD High Diode Semiconductor 3