INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 820 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 0.5 ℃/W 62 ℃/W Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=150μA 2 RDS(on) Drain-Source On-Resistance VGS=10V; ID=75A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 4 V 3.4 mΩ ±100 nA VDS=60V; VGS= 0V 20 μA IS =75A; VGS = 0 V 1.3 V 2 isc & iscsemi is registered trademark