ON MBRB30H30CT-1 Switchmode power rectifier 30 v, 30 a Datasheet

MBRB30H30CT−1
SWITCHMODE™
Power Rectifier
30 V, 30 A
Features and Benefits
•
•
•
•
•
•
http://onsemi.com
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
30 VOLTS
1
Applications
2, 4
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
MARKING
DIAGRAM
4
Mechanical Characteristics:
•
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.5 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
This is a Pb−Free Device
MAXIMUM RATINGS
I2PAK (TO−262)
CASE 418D
PLASTIC
AYWW
B30H30G
AKA
12
3
B30H30
A
Y
WW
AKA
G
= Device Code
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Device
Please See the Table on the Following Page
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 0
1
Device
Package
Shipping
MBRB30H30CT−1G
TO−262
(Pb−Free)
50 Units/Rail
Publication Order Number:
MBRB30H30CT−1/D
MBRB30H30CT−1
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR) TC = 138°C
IF(AV)
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
260
A
TJ
−55 to +150
°C
Storage Temperature
Tstg
*55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
250
mJ
> 400
> 8000
V
2.0
70
°C/W
Operating Junction Temperature (Note 1)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
V
0.48
0.40
0.55
0.53
mA
0.8
130
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBRB30H30CT−1
100
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.1
0.2
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.1
1.0E−01
TJ = 125°C
0.6
0.7
0.8
0.9
1.0
TJ = 125°C
1.0E−02
1.0E−03
1.0E−03
TJ = 25°C
1.0E−04
5
10
15
1.0E−04
25
20
30
1.0E−05
0
TJ = 25°C
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
30
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
0.5
1.0E−01
1.0E−02
dc
25
SQUARE WAVE
15
10
5
0
100
0.4
1.0E−00
IR, REVERSE CURRENT (AMPS)
1.0E−00
20
0.3
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
1.0E−05
0
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
110
120
130
140
150
160
16
14
12
SQUARE
10
8
DC
6
4
2
0
0
5
10
15
20
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
30
25
MBRB30H30CT−1
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Case
http://onsemi.com
4
10
100
1000
MBRB30H30CT−1
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
S1
ID
ID
IL
DUT
VDD
t0
Figure 9. Test Circuit
t1
t2
t
Figure 10. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
–V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
http://onsemi.com
5
Ǔ
MBRB30H30CT−1
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE B
C
E
V
−B−
4
A
W
1
2
3
F
−T−
SEATING
PLANE
K
S
J
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.88
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
G
D
3 PL
0.13 (0.005)
M
T B
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MBRB30H30CT−1/D
Similar pages