Micross LS5911 PDIP N-channel jfet Datasheet

LS5911
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5911
FEATURES
Improved Direct Replacement for SILICONIX & NATIONAL 2N5911
LOW NOISE (10KHz)
en~ 4nV/√Hz
HIGH TRANSCONDUCTANCE (100MHz)
gfs ≥ 4000µS
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
The LS5911 are monolithic dual JFETs. The monolithic
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The LS5911 is a direct replacement for
discontinued Siliconix and National 2N5911.
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS5911 Applications:
ƒ
Wideband Differential Amps
ƒ
High-Speed,Temp-Compensated SingleEnded Input Amps
ƒ
High-Speed Comparators
ƒ
Impedance Converters and vibrations
detectors.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|VGS1 – VGS2 |
Differential Gate to Source Cutoff Voltage
∆|VGS1 – VGS2 | / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
IDSS1 / IDSS2
Gate to Source Saturation Current Ratio
‐65°C to +150°C
‐55°C to +135°C
500mW
50mA
‐25V
‐25V
MIN
‐‐
‐‐
TYP
‐‐
‐‐
MAX
10
20
UNITS
mV
µV/°C
CONDITIONS
VDG = 10V, ID = 5mA
VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
VDS = 10V, VGS = 0V
0.95
‐‐
1
%
‐‐
‐‐
20
nA
0.95
‐‐
1
%
VDG = 10V, ID = 5mA
TA = +125°C
VDS = 10V, ID = 5mA, f = 1kHz
‐‐
85
‐‐
dB
VDG = 5V to 10V, ID = 5mA
Click To Buy
|IG1 – IG2 |
gfs1 / gfs2
CMRR
Differential Gate Current
Forward Transconductance Ratio2
Common Mode Rejection Ratio
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Gate to Source Breakdown Voltage
‐25
VGS(off)
Gate to Source Cutoff Voltage
‐1
VGS(F)
Gate to Source Forward Voltage
‐‐
VGS
Gate to Source Voltage
‐0.3
IDSS
Gate to Source Saturation Current3
7
IGSS
Gate Leakage Current3
‐‐
IG
Gate Operating Current
‐‐
gfs
Forward Transconductance
gos
Output Conductance
CISS
CRSS
NF
en
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Equivalent Input Noise Voltage
4000
4000
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐‐
‐1
‐1
MAX.
UNITS
‐5
‐‐
‐4
40
‐50
‐50
V
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
7
4
10000
10000
100
150
5
1.2
1
20
10
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
3. Assumes smaller value in numerator
pA
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
IG = 1mA, VDS = 0V
VDG = 10V, IG = 5mA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
µS
VDG = 10V, ID= 5mA
pF
VDG = 10V, ID = 5mA, f = 1MHz
dB
nV/√Hz
VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ
VDG = 10V, ID = 5mA, f = 100Hz
VDG = 10V, ID = 5mA, f = 10kHz
mA
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
Available Packages:
Please contact Micross for full package and die dimensions:
LS5911 in PDIP
LS5911 available as bare die
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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