Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Main Product Characteristics General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF (AV) 2×10A VRRM 60V TJ 150oC VF (max) 0.75V MBR2060C is available in TO-220-3, TO-220-3 (2) and TO-220F-3 packages. Mechanical Characteristics Features · · · · · · · · High Surge Capacity 150oC Operating Junction Temperature 20A Total (10A Each Diode Leg) Guard-ring for Stress Protection Pb-free Package · · · Applications · · · Power Supply Output Rectification Power Management Instrumentation TO-220F-3 Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximumfor 10 Seconds TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR2060C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Pin Configuration T Package (TO-220-3 (2)) (TO-220-3) (Optional) 3 A2 3 A2 2 K 2 K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2 K 1 A1 Figure 2. Pin Configuration of MBR2060C (Front View) A1 K A2 Figure 3. Internal Structure of MBR2060C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Ordering Information MBR2060C Package Circuit Type E1: Lead Free G1: Green Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Lead Free TO-220-3 (2) MBR2060CT-E1 TO-220F-3 - Marking ID Green MBR2060CT-G1 MBR2060CTF-E1 MBR2060CTF-G1 Lead Free MBR2060CT-E1 Green MBR2060CT-G1 MBR2060CTF-E1 MBR2060CTF-G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC=136oC IF (AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=131oC IFRM 20 A Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 150 A TJ 150 o Storage Temperature Range TSTG -50 to 150 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA. Thermal Characteristics Parameter Symbol θJC Condition Junction to Case Maximum Thermal Resistance θJA Junction to Ambient Mar. 2011 Rev. 1. 3 Value TO-220-3/ TO-220-3 (2) 2.5 TO-220F-3 4.5 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 Unit o C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Electrical Characteristics (Each Diode Leg) Parameter Maximum Instantaneous Voltage Drop (Note 3) Condition Forward IF=10A, TC=25oC Maximum Instantaneous Reverse Current (Note 3) IF=10A, TC=125oC Rated DC Voltage, TC=25oC Rated DC Voltage, TC=125oC Symbol VF Value 0.85 0.75 Unit V 0.15 IR mA 150 Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 0.1 O 25 C O 125 C O 150 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 0.1 IR, Reverse Current (A) 0.01 1E-3 1E-4 1E-5 O 25 C O 125 C O 150 C 1E-6 1E-7 0 10 20 30 40 50 60 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Typical Performance Characteristics (Continued) 20 Average Forward Current (A) 18 16 14 12 10 8 6 4 2 0 100 105 110 115 120 125 130 135 140 145 150 155 160 o Case Temperature ( C) Figure 6. Average Forward Current vs. Case Temperature (Per Diode) Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 9.660(0.380) 10.660(0.420) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) φ1.500(0.059) 1.160(0.046) 1.760(0.069) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 14.230(0.560) 16.510(0.650) 1.850(0.073) φ3.560(0.140) 4.060(0.160) 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 3 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) ∅ 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 11.100(0.437) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 6.300(0.248) 6.700(0.264) 1.620(0.064) 1.820(0.072) 9.000(0.354) 9.400(0.370) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 0.700(0.028) 0.900(0.035) 2.540(0.100) REF 12.600(0.496) 13.600(0.535) 1.170(0.046) 1.390(0.055) 9.600(0.378) 10.600(0.417) 3.000(0.118) REF 3° 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2060C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) ∅ٛ 3.000(0.119) 3.550(0.140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 3 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788