TriQuint AH314 2.3-2.9 ghz wimax 2w driver amplifier Datasheet

AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
• EVM <2.5 %@ 24 dBm Pout
• Internal Active Bias
Vpd2
Vcc2
Applications
• 802.16 WiMAX infrastructure
• WiBro infrastructure
RF OUT
GND / NC
RF OUT
RF IN
GND / NC
RF OUT
RF IN
GND / NC
GND / NC
GND / NC
• Lead-free/RoHS-compliant
5x5 mm QFN SMT package
AH314 uses a high reliability +5V InGaP/GaAs HBT
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
AH314 to operate directly off a commonly available +5V
supply. The RoHS-compliant/Lead-free 5x5mm QFN
package is surface mountable to allow for low
manufacturing costs to the end user.
GND / NC
GND / NC
• +33 dBm P1dB
The AH314 is targeted for use in a configuration for the
driver stage amplifier in 802.16 WiMAX or WiBro
basestations where high linearity and medium power is
required.
Specifications (1)
Operational Bandwidth
Output Channel Power
Power Gain
EVM(2)
Efficiency
Output P1dB
Noise Figure
PIN_VPD Current, Ipd
Quiescent Current, Icq(3)
Icc @ 24dBm
Device Voltage, Vcc
Vpd1
Vbias1
• +5V Single Supply Voltage
Parameter
Vbias2
• 23 dB Gain
The AH314 is a high dynamic range broadband driver
amplifier in a surface mount package. The two-stage
amplifier has 23 dB of gain, while achieving +24 dBm of
linear output power for 2.3–2.9 GHz WiMAX/WiBro
applications.
GND / NC
• 2.3 – 2.9 GHz
Functional Diagram
Vcc1
Product Description
GND / NC
Product Features
Typical Performance (4)
Units Min
GHz
dBm
dB
%
%
dBm
dB
mA
mA
mA
V
Typ
2.3
Max
2.9
+24
23
2.0
6.6
+33
6.4
36
600
700
+5
2.5
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, in 2.5-2.7GHz tuned application circuit
shown in page 3.
2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels.
3. This corresponds to the quiescent current or operating current under small-signal conditions with
bias resistor R1=68Ω off pin 1 and R2=150Ω off pin 16.
4. This corresponds to the quiescent current or operating current under small signal conditions into
pins 1, 2, 15 and 17. Pin 1 and 16 is used a reference voltage for the internal biasing circuitry. It is
expected that PIN_VPD1 and PIN_VPD2 will pull 36 mA of current when used with series
resistors (i.e. Total device current typically will be 636 mA).
Parameter
Frequency
Output Channel Power
Power Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
EVM
Efficiency
Noise Figure
Quiescent Current
Vpd, Vbias
Units
Vcc=5V
Vcc=6V
GHz
dBm
dB
dB
dB
dBm
%
%
dB
mA
V
2.6
+25
23.1
-8.2
-16.7
33
1.8
8.2
6.4
600
+5
2.6
+26.5
23.1
-8.6
-26
34.5
2.2
8.5
6.4
650
+6
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
Collector Current, Icc ( Icc1+Icc2)
RF Input Power into a 50Ω Load
Device Voltage
Device Power
Thermal Resistance, Rth
Junction Temperature
-55 to +125 ºC
1.6 A
19 dBm
+8 V
8W
14.4 °C / W
150 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AH314-G
AH314-PCB
2.3-2.9 GHz WiMAX 2W Driver Amplifier
2.4-2.7 GHz Evaluation Board
Standard T/R size = 500 pieces on a 7” reel.
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 1 of 6 September 2008
AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, calibrated to device leads)
1.0
0.8
Swp Max
4GHz
0.
4
0
4.
20
0
3.
0
0
4.
5.0
0
5.0
0.2
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0.2
10.0
15
0
Gain (dB)
4
3.
0.
25
2.
2.
0
0.
6
0.8
0.
6
DB(|S(2,1)|)
S22
Swp Max
4GHz
1.0
S11
Gain
30
10
-10.0
4
-3
.
0
-0.8
S(2,2)
-1.0
Swp Min
0GHz
-
.6
-0
-1.0
S(1,1)
-0.8
-0
.6
-2
.0
.
-0
0
2.
.0
5
-3
0
4
-4
Frequency (GHz)
4
- 5.
3
.0
2
-4
1
.0
0
2
0
.
-0
0
- 0.
- 5.
2
-10.0
- 0.
5
Swp Min
0GHz
Notes:
The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0 – 4000 MHz, with markers
placed at 0-4GHz in 0.5GHz increments.
S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq ( MHz ) S11(dB)
S11(ang)
S21(dB)
S21(ang)
S12(dB)
S12(ang)
S22(dB)
2200
-6.45
-120.54
23.31
-145.39
-48.04
60.39
-2.33
2250
-6.78
-130.36
23.13
-158.46
-47.97
52.65
-2.65
2300
-7.13
-138.36
22.99
-170.95
-48.01
45.37
-2.98
2350
-7.45
-144.94
22.95
177.21
-48.10
38.67
-3.31
2400
-7.81
-150.37
22.95
165.61
-48.27
31.91
-3.65
2450
-8.23
-154.71
23.00
154.08
-48.56
24.85
-4.01
2500
-8.68
-158.06
23.09
142.57
-48.96
17.33
-4.39
2550
-9.18
-160.55
23.28
131.04
-49.41
8.81
-4.78
2600
-9.69
-161.94
23.51
119.35
-49.99
-0.931
-5.19
2650
-10.16
-162.13
23.78
107.23
-50.72
-12.17
-5.65
2700
-10.53
-161.30
24.11
94.68
-51.59
-26.06
-6.17
2750
-10.73
-159.84
24.53
81.54
-52.51
-43.81
-6.8
2800
-10.68
-158.59
25.03
67.41
-53.25
-67.29
-7.77
2850
-10.36
-158.56
25.69
52.45
-53.15
-96.50
-9.09
2900
-9.90
-161.62
26.43
35.26
-51.90
-128.68
-11.10
2950
-9.64
-169.83
27.14
14.38
-49.90
-160.49
-12.82
3000
-10.22
175.73
27.49
-10.77
-48.05
168.76
-9.754
S22(ang)
157.17
156.54
156.14
155.90
155.85
155.98
156.31
156.65
157.1
157.78
158.54
159.55
161.17
164.03
172.59
-160.65
-129.23
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu, εr = 2.45 Microstrip line details: width = .042”, spacing = .050”. The silkscreen
markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as place markers for the input and output tuning.
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 2 of 6 September 2008
AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
Application Circuit Schematic (AH314-PCB) for 2.5-2.7 GHz.
(The Amplifier can be tuned across any 200MHz band over the 2.3-2.9 GHz BW.)
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 3 of 6 September 2008
AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
Typical Performance Plots for AH314-PCB, Vpd, Vbias, Vcc = 5V, +25°C
Gain
EVM vs Pout vs Temperature
Return Loss
(Freq = 2.6GHz, Vcc=5V)
0
25
S11
Gain
23
22
21
-10
-15
-20
20
2.5
2.6
2.7
2.8
2.9
2.5
2.6
2.7
2.8
Gain vs Pout vs Temperature
(+25°C, Vcc=5V)
(Freq = 2.6GHz, Vcc=5V)
2.9
14
25
24
24
23
22
22
24
22
24
2.6GHz
2.7GHz
23
22
26
28
30
32
34
20
22
Pout (dBm)
Pout (dBm)
24
26
28
Current vs Pout vs Frequency
IM3 vs. Pout
( Freq = 2.6GHz, Vcc=5V )
( +25°C, Vcc=5V )
(2.5GHz, 1MHz tone spacing, +25° C)
-20
1000
+25C
-40C
+85C
2.5GHz
900
2.6GHz
2.7GHz
-30
700
IM3 (dBc)
Current (mA)
900
800
800
700
600
600
20
22
24
26
28
-40
-50
-60
OFDM, QAM-64,54Mb/S
OFDM, QAM-64,54Mb/S
500
30
Pout (dBm)
Current vs Pout vs Temperature
1000
26
20
20
26
24
OFDM, QAM-64,54Mb/S
20
0
22
21
+25C
-40C
+85C
OFDM, QAM-64,54Mb/S
OFDM, QAM-64,54Mb/S
20
( +25°C, Vcc=5V )
25
21
1
20
18
Gain vs Pout vs Frequency
Gain (dB)
Gain (dB)
2
18
16
2.5GHz
3
16
OFDM, QAM-64,54Mb/S
2.7GHz
4
14
2
Pout (dBm)
EVM vs Pout vs Frequency
2.6GHz
3
Frequency (GHz)
5
+85C
0
2.4
Frequency (GHz)
2.5GHz
-40C
1
-25
2.4
EVM (%)
+25C
4
EVM (%)
S11 & S22 (dB)
Gain(dB)
S22
-5
24
Current (mA)
5
500
-70
20
30
22
Pout (dBm)
24
26
28
30
14
Pout (dBm)
16
18
20
22
24
26
Output Power / Tone (dBm)
Typical Performance Plots for AH314-PCB, Vpd, Vbias = 5V, Vcc = 6V, +25°C
EVM vs Pout vs Frequency
Current vs Pout vs Frequency
( +25°C, Vcc=6V )
Gain
(+25°C, Vcc=6V)
25
5
2.5GHz
2.6GHz
2.5GHz
24
3
2
1
OFDM, QAM-64,54Mb/S
0
17
19
21
23
Pout (dBm)
25
27
2.6GHz
2.7GHz
900
Current (mA)
Gain(dB)
4
EVM (%)
1000
Gain
2.7GHz
23
22
800
700
21
600
20
2.4
500
OFDM, QAM-64,54Mb/S
2.5
2.6
2.7
2.8
2.9
17
Frequency (GHz)
19
21
23
25
27
Pout (dBm)
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 4 of 6 September 2008
AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
2.3 – 2.7 GHz Application Note: Changing Icq Biasing Configurations at +5V
The AH314 can be configured to operate with lower bias current by varying the bias-adjust resistors R1 & R2. R1 sets the
quiescent current in the output stage, while R2 sets the quiescent current in the input stage. The recommended circuit
configurations shown previously in this datasheet have the device operating with a 600 mA as the quiescent current (ICQ). This
biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the
device, but degrade the EVM performance. Raising ICQ will improve the EVM performance, but degrade the efficiency of the
device. Measured data shown in the plots below represents the AH314 measured and configured for 2.6 GHz applications. It is
expected that variation of the bias current for other frequency applications will produce similar performance results.
EVM vs Pout vs Icq
F = 2.6GHz, 802.16-2004 OFDMA, 64QAM-1/2, 1024 FFT, 20 symbols,
30 channels
7
600 mA
400 mA
6
500 mA
300 mA
Table 1 : Reduced Current Operation
Icq
(mA)
R1
(Ω)
R2
(Ω)
VPD, Vbias, Vcc
(V)
600
500
400
300
68
86
110
160
150
180
300
330
5
5
5
5
EVM (%)
5
4
3
2
1
0
20
21
22
23
24
25
26
27
Pout (dBm)
2.3 – 2.7 GHz Application Note: Changing Icq Biasing Configurations at +3.3V
EVM vs Pout vs Icq
F = 2.6GHz, 802.16-2004 OFDMA, 64QAM-1/2, 1024 FFT, 20
symbols, 30 channels
7
6
Table 2 : Reduced Current Operation
Icq
R1
R2
VPD, Vbias, Vcc
(mA)
(Ω)
(Ω)
(V)
3
500
3.3
3
15
400
3.3
11
24
350
3.3
17
250
43
45
3.3
EVM (%)
5
4
3
2
500 mA
350 mA
1
400 mA
250 mA
0
20
21
22
23
Pout (dBm)
24
25
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 5 of 6 September 2008
AH314
2.3-2.9 GHz WiMAX 2W Driver Amplifier
Mechanical Information
This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both
lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an
“AH314G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating:
Standard:
Level 3 at +260 °C convection reflows
JEDEC Standard J-STD-020
Vpd2
Vbias2
Vcc1
GND / NC
Functional Pin Layout
GND / NC
Mounting Configuration / Land Pattern
ESD Rating:
Value:
Test:
Standard:
Vpd1
Vcc2
Vbias1
GND / NC
GND / NC
GND / NC
RF OUT
GND / NC
RF OUT
RF IN
GND / NC
RF OUT
RF IN
GND / NC
GND / NC
Function
Pin No.
Vcc1
Vcc2
Vpd1
19
15
1
Vpd2
Input
Output
Vbias1
16
4,5
11,12,13
2
Vbias2
GND
N/C or GND
17
Backside Paddle
3,6,7,8,9,10,14,18,20
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 6 of 6 September 2008
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