AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant 5x5 mm QFN SMT package AH314 uses a high reliability +5V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AH314 to operate directly off a commonly available +5V supply. The RoHS-compliant/Lead-free 5x5mm QFN package is surface mountable to allow for low manufacturing costs to the end user. GND / NC GND / NC • +33 dBm P1dB The AH314 is targeted for use in a configuration for the driver stage amplifier in 802.16 WiMAX or WiBro basestations where high linearity and medium power is required. Specifications (1) Operational Bandwidth Output Channel Power Power Gain EVM(2) Efficiency Output P1dB Noise Figure PIN_VPD Current, Ipd Quiescent Current, Icq(3) Icc @ 24dBm Device Voltage, Vcc Vpd1 Vbias1 • +5V Single Supply Voltage Parameter Vbias2 • 23 dB Gain The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving +24 dBm of linear output power for 2.3–2.9 GHz WiMAX/WiBro applications. GND / NC • 2.3 – 2.9 GHz Functional Diagram Vcc1 Product Description GND / NC Product Features Typical Performance (4) Units Min GHz dBm dB % % dBm dB mA mA mA V Typ 2.3 Max 2.9 +24 23 2.0 6.6 +33 6.4 36 600 700 +5 2.5 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, in 2.5-2.7GHz tuned application circuit shown in page 3. 2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels. 3. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=68Ω off pin 1 and R2=150Ω off pin 16. 4. This corresponds to the quiescent current or operating current under small signal conditions into pins 1, 2, 15 and 17. Pin 1 and 16 is used a reference voltage for the internal biasing circuitry. It is expected that PIN_VPD1 and PIN_VPD2 will pull 36 mA of current when used with series resistors (i.e. Total device current typically will be 636 mA). Parameter Frequency Output Channel Power Power Gain S11 – Input R.L. S22 – Output R.L. Output P1dB EVM Efficiency Noise Figure Quiescent Current Vpd, Vbias Units Vcc=5V Vcc=6V GHz dBm dB dB dB dBm % % dB mA V 2.6 +25 23.1 -8.2 -16.7 33 1.8 8.2 6.4 600 +5 2.6 +26.5 23.1 -8.6 -26 34.5 2.2 8.5 6.4 650 +6 4. Typical parameters reflect performance in a tuned application circuit at +25° C. Absolute Maximum Rating Parameter Rating Storage Temperature Collector Current, Icc ( Icc1+Icc2) RF Input Power into a 50Ω Load Device Voltage Device Power Thermal Resistance, Rth Junction Temperature -55 to +125 ºC 1.6 A 19 dBm +8 V 8W 14.4 °C / W 150 °C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH314-G AH314-PCB 2.3-2.9 GHz WiMAX 2W Driver Amplifier 2.4-2.7 GHz Evaluation Board Standard T/R size = 500 pieces on a 7” reel. Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 1 of 6 September 2008 AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, calibrated to device leads) 1.0 0.8 Swp Max 4GHz 0. 4 0 4. 20 0 3. 0 0 4. 5.0 0 5.0 0.2 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0.2 10.0 15 0 Gain (dB) 4 3. 0. 25 2. 2. 0 0. 6 0.8 0. 6 DB(|S(2,1)|) S22 Swp Max 4GHz 1.0 S11 Gain 30 10 -10.0 4 -3 . 0 -0.8 S(2,2) -1.0 Swp Min 0GHz - .6 -0 -1.0 S(1,1) -0.8 -0 .6 -2 .0 . -0 0 2. .0 5 -3 0 4 -4 Frequency (GHz) 4 - 5. 3 .0 2 -4 1 .0 0 2 0 . -0 0 - 0. - 5. 2 -10.0 - 0. 5 Swp Min 0GHz Notes: The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0 – 4000 MHz, with markers placed at 0-4GHz in 0.5GHz increments. S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq ( MHz ) S11(dB) S11(ang) S21(dB) S21(ang) S12(dB) S12(ang) S22(dB) 2200 -6.45 -120.54 23.31 -145.39 -48.04 60.39 -2.33 2250 -6.78 -130.36 23.13 -158.46 -47.97 52.65 -2.65 2300 -7.13 -138.36 22.99 -170.95 -48.01 45.37 -2.98 2350 -7.45 -144.94 22.95 177.21 -48.10 38.67 -3.31 2400 -7.81 -150.37 22.95 165.61 -48.27 31.91 -3.65 2450 -8.23 -154.71 23.00 154.08 -48.56 24.85 -4.01 2500 -8.68 -158.06 23.09 142.57 -48.96 17.33 -4.39 2550 -9.18 -160.55 23.28 131.04 -49.41 8.81 -4.78 2600 -9.69 -161.94 23.51 119.35 -49.99 -0.931 -5.19 2650 -10.16 -162.13 23.78 107.23 -50.72 -12.17 -5.65 2700 -10.53 -161.30 24.11 94.68 -51.59 -26.06 -6.17 2750 -10.73 -159.84 24.53 81.54 -52.51 -43.81 -6.8 2800 -10.68 -158.59 25.03 67.41 -53.25 -67.29 -7.77 2850 -10.36 -158.56 25.69 52.45 -53.15 -96.50 -9.09 2900 -9.90 -161.62 26.43 35.26 -51.90 -128.68 -11.10 2950 -9.64 -169.83 27.14 14.38 -49.90 -160.49 -12.82 3000 -10.22 175.73 27.49 -10.77 -48.05 168.76 -9.754 S22(ang) 157.17 156.54 156.14 155.90 155.85 155.98 156.31 156.65 157.1 157.78 158.54 159.55 161.17 164.03 172.59 -160.65 -129.23 Device S-parameters are available for download from the website at: http://www.wj.com Application Circuit PC Board Layout PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu, εr = 2.45 Microstrip line details: width = .042”, spacing = .050”. The silkscreen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as place markers for the input and output tuning. Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 2 of 6 September 2008 AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier Application Circuit Schematic (AH314-PCB) for 2.5-2.7 GHz. (The Amplifier can be tuned across any 200MHz band over the 2.3-2.9 GHz BW.) Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 3 of 6 September 2008 AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier Typical Performance Plots for AH314-PCB, Vpd, Vbias, Vcc = 5V, +25°C Gain EVM vs Pout vs Temperature Return Loss (Freq = 2.6GHz, Vcc=5V) 0 25 S11 Gain 23 22 21 -10 -15 -20 20 2.5 2.6 2.7 2.8 2.9 2.5 2.6 2.7 2.8 Gain vs Pout vs Temperature (+25°C, Vcc=5V) (Freq = 2.6GHz, Vcc=5V) 2.9 14 25 24 24 23 22 22 24 22 24 2.6GHz 2.7GHz 23 22 26 28 30 32 34 20 22 Pout (dBm) Pout (dBm) 24 26 28 Current vs Pout vs Frequency IM3 vs. Pout ( Freq = 2.6GHz, Vcc=5V ) ( +25°C, Vcc=5V ) (2.5GHz, 1MHz tone spacing, +25° C) -20 1000 +25C -40C +85C 2.5GHz 900 2.6GHz 2.7GHz -30 700 IM3 (dBc) Current (mA) 900 800 800 700 600 600 20 22 24 26 28 -40 -50 -60 OFDM, QAM-64,54Mb/S OFDM, QAM-64,54Mb/S 500 30 Pout (dBm) Current vs Pout vs Temperature 1000 26 20 20 26 24 OFDM, QAM-64,54Mb/S 20 0 22 21 +25C -40C +85C OFDM, QAM-64,54Mb/S OFDM, QAM-64,54Mb/S 20 ( +25°C, Vcc=5V ) 25 21 1 20 18 Gain vs Pout vs Frequency Gain (dB) Gain (dB) 2 18 16 2.5GHz 3 16 OFDM, QAM-64,54Mb/S 2.7GHz 4 14 2 Pout (dBm) EVM vs Pout vs Frequency 2.6GHz 3 Frequency (GHz) 5 +85C 0 2.4 Frequency (GHz) 2.5GHz -40C 1 -25 2.4 EVM (%) +25C 4 EVM (%) S11 & S22 (dB) Gain(dB) S22 -5 24 Current (mA) 5 500 -70 20 30 22 Pout (dBm) 24 26 28 30 14 Pout (dBm) 16 18 20 22 24 26 Output Power / Tone (dBm) Typical Performance Plots for AH314-PCB, Vpd, Vbias = 5V, Vcc = 6V, +25°C EVM vs Pout vs Frequency Current vs Pout vs Frequency ( +25°C, Vcc=6V ) Gain (+25°C, Vcc=6V) 25 5 2.5GHz 2.6GHz 2.5GHz 24 3 2 1 OFDM, QAM-64,54Mb/S 0 17 19 21 23 Pout (dBm) 25 27 2.6GHz 2.7GHz 900 Current (mA) Gain(dB) 4 EVM (%) 1000 Gain 2.7GHz 23 22 800 700 21 600 20 2.4 500 OFDM, QAM-64,54Mb/S 2.5 2.6 2.7 2.8 2.9 17 Frequency (GHz) 19 21 23 25 27 Pout (dBm) Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 4 of 6 September 2008 AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier 2.3 – 2.7 GHz Application Note: Changing Icq Biasing Configurations at +5V The AH314 can be configured to operate with lower bias current by varying the bias-adjust resistors R1 & R2. R1 sets the quiescent current in the output stage, while R2 sets the quiescent current in the input stage. The recommended circuit configurations shown previously in this datasheet have the device operating with a 600 mA as the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degrade the EVM performance. Raising ICQ will improve the EVM performance, but degrade the efficiency of the device. Measured data shown in the plots below represents the AH314 measured and configured for 2.6 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. EVM vs Pout vs Icq F = 2.6GHz, 802.16-2004 OFDMA, 64QAM-1/2, 1024 FFT, 20 symbols, 30 channels 7 600 mA 400 mA 6 500 mA 300 mA Table 1 : Reduced Current Operation Icq (mA) R1 (Ω) R2 (Ω) VPD, Vbias, Vcc (V) 600 500 400 300 68 86 110 160 150 180 300 330 5 5 5 5 EVM (%) 5 4 3 2 1 0 20 21 22 23 24 25 26 27 Pout (dBm) 2.3 – 2.7 GHz Application Note: Changing Icq Biasing Configurations at +3.3V EVM vs Pout vs Icq F = 2.6GHz, 802.16-2004 OFDMA, 64QAM-1/2, 1024 FFT, 20 symbols, 30 channels 7 6 Table 2 : Reduced Current Operation Icq R1 R2 VPD, Vbias, Vcc (mA) (Ω) (Ω) (V) 3 500 3.3 3 15 400 3.3 11 24 350 3.3 17 250 43 45 3.3 EVM (%) 5 4 3 2 500 mA 350 mA 1 400 mA 250 mA 0 20 21 22 23 Pout (dBm) 24 25 Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 5 of 6 September 2008 AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier Mechanical Information This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH314G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 3 at +260 °C convection reflows JEDEC Standard J-STD-020 Vpd2 Vbias2 Vcc1 GND / NC Functional Pin Layout GND / NC Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Vpd1 Vcc2 Vbias1 GND / NC GND / NC GND / NC RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC Function Pin No. Vcc1 Vcc2 Vpd1 19 15 1 Vpd2 Input Output Vbias1 16 4,5 11,12,13 2 Vbias2 GND N/C or GND 17 Backside Paddle 3,6,7,8,9,10,14,18,20 Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.TriQuint.com Page 6 of 6 September 2008