MBRS360P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection These are Pb−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SMC CASE 403AC Mechanical Characteristics MARKING DIAGRAM • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal AYWW B36G G Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model, C ♦ Human Body Model, 3B B36 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS360PT3G Package Shipping† SMC (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 0 1 Publication Order Number: MBRS360P/D MBRS360P MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C 4.0 @ TL = 127°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Storage Temperature Range Tstg − 65 to +175 °C Operating Junction Temperature (Note 1) TJ − 65 to +175 °C A 125 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) RqJL 11 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 136 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 71 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 4) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.63 mA 0.03 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 150°C TJ = 175°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 TJ = −40°C 0.0 0.2 0.4 0.6 TJ = 175°C 1 TJ = 150°C TJ = 25°C 0.01 0.8 TJ = 100°C 0.1 TJ = −40°C 0.0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRS360P IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C 1.0E−02 TJ = 150°C 1.0E−03 TJ = 100°C 1.0E−04 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 3. Typical Reverse Current IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C TJ = 150°C 1.0E−02 TJ = 100°C 1.0E−03 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current www.onsemi.com 3 60 5 PFO, AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) MBRS360P dc 4 SQUARE WAVE 3 2 1 RqJL = 15°C/W 0 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) 160 180 4 TJ = 175°C 3.5 SQUARE WAVE 3 dc 2.5 2 1.5 1 0.5 0 0 0.5 1.5 1 2.5 2 3 3.5 4 4.5 5 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 10 20 40 30 50 60 70 VR, REVERSE VOLTAGE (V) r(t), TRANSIENT THERMAL RESPONSE Figure 7. Typical Capacitance 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 1 10 t, TIME (s) Figure 8. Thermal Response, Junction−to−Ambient, SMC Package www.onsemi.com 4 100 1000 MBRS360P PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. 4. DIMENSIONS D AND E1 TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DE TERMINED BY DIMENSION L. E E1 D A1 DIM A A1 b c D E E1 L c DETAIL A TOP VIEW DETAIL A MILLIMETERS MIN MAX 1.95 2.65 0.05 0.20 2.90 3.20 0.15 0.41 5.55 6.25 7.75 8.15 6.60 7.15 0.75 1.60 A b L SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.75 2X 3.79 2X 2.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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