APT10M30AVR
65A 0.030Ω
100V
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-3 Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M30AVR
UNIT
100
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
5
65
5
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
235
Watts
Linear Derating Factor
1.88
W/°C
VGSM
PD
TJ,TSTG
260
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
5
65
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
100
Volts
65
Amps
On State Drain Current
2
5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.030
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5830 Rev -
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10M30AVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
4300
5160
Coss
Output Capacitance
VDS = 25V
1600
2240
Reverse Transfer Capacitance
f = 1 MHz
650
975
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
150
225
VDD = 0.5 VDSS
28
42
ID = 0.5 ID[Cont.] @ 25°C
75
115
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
13
26
VDD = 0.5 VDSS
22
44
ID = ID[Cont.] @ 25°C
40
60
RG = 1.6Ω
10
20
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
Continuous Source Current
5
MIN
65
(Body Diode)
UNIT
Amps
Pulsed Source Current
1
5
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
150
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
1.0
µC
260
(Body Diode)
1.3
Volts
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum T
j
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
0.53
30
4 Starting T = +25°C, L = 0.71mH, R = 25Ω, Peak I = 65A
j
G
L
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5830 Rev -
0.6
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT10M30AVR
150
VGS=10V & 15V
125
7V
100
6.5V
75
6V
50
5.5V
5V
25
4.5V
ID, DRAIN CURRENT (AMPERES)
125
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
TJ = +125°C
75
50
25
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
75
6V
50
5.5V
5V
25
4.5V
1.2
V
1.1
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
VGS=10V
1.0
0.9
0.8
VGS=20V
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.75
1.50
1.25
1.00
0.75
0.50
-50
6.5V
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.00
7V
100
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
10V
4V
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
150
VGS=15V
125
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5830 Rev -
ID, DRAIN CURRENT (AMPERES)
150
APT10M30AVR
OPERATION HERE
LIMITED BY RDS (ON)
100
50
1mS
10mS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=20V
VDS=50V
12
VDS=80V
8
4
0
Ciss
Ciss
5,000
Coss
Crss
1,000
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
16
10,000
100
1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
DC
1
20
15,000
100µS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
400
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-3 (TO-204AE) Package Outline
Seating
Plane
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
16.64 (.655)
17.15 (.675)
Source
Drain
(Case)
22.23 (.875) Max.
29.90 (1.177)
30.40 (1.197)
1.47 (.058)
1.60 (.063)
(2-Places)
6.35 (.250)
9.15 (.360)
1.52 (.060)
3.43 (.135)
5.21 (.205)
5.72 (.225)
7.92 (.312)
12.70 (.500)
10.67 (.420)
11.18 (.440)
25.15 (0.990)
26.67 (1.050)
050-5830 Rev -
38.61 (1.52)
39.12 (1.54)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058