HUASHAN HS2236 Npn silicon transistor Datasheet

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HS2236
█ APPLICATIONS
Audio Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-126
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)………………… 900mW
VCBO ——Collector-Base Voltage………………………… 30V
VCEO ——Collector-Emitter Voltage……………………… 30V
1―Emitter,E
2―Collector,C
3―Base,B
VEBO ——Emitter-Base Voltage……………………………… 5V
IC——Collector Current………………………………………1.5A
Ib——Base Current…………………………………………0.15A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCEO
Collector-Emitter Breakdown Voltage
30
V
IC=10mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
5
V
IE=1mA,IC=0
IEBO
Emitter Cut-off Current
100
nA
VEB=5V, IC=0
ICBO
Collector Cut-off Current
100
nA
VCB=30V, IE=0
HFE
DC Current Gain
VCE(sat)
VBE
ft
Cob
100
VCE=2V, IC=500mA
320
Collector- Emitter Saturation Voltage
2
V
IC=1.5A, IB=0.03A
Base-Emitter Voltage
1
V
VCE=2V, IC=500mA
MHz
VCE=2V, IC=500mA,
Current Gain-Bandwidth Product
Output Capacitance
120
30
█ hFE Classification
O
Y
100—200
160—320
pF
VCB=10V, IE=0,f=1MHz
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RA N S I S T O R
HS2236
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