HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating ♦ Human Body Model: 3A ♦ Machine Model: C S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−74 CASE 318F STYLE 3 (6) (5) (4) Q1 Q2 (1) (2) (3) MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C) R9 MG G Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc M IC 200 mAdc G Rating Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. R9 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 380 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Package Shipping† HN1B01FDW1T1G SC−74 3,000/Tape & Reel (Pb−Free) SHN1B01FDW1T1G SC−74 3,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 4 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1G, SHN1B01FDW1T1G Q1: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Min Max −50 − −60 − −7.0 − − −0.1 − − − −0.1 −2.0 −1.0 −200 −400 − −0.3 Min Max 50 − 60 − 7.0 − − 0.1 − − − 0.1 2.0 1.0 200 400 − 0.25 Unit Vdc Vdc Vdc mAdc mAdc mAdc mAdc − VCE(sat) Vdc Q2: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Vdc Vdc Vdc mAdc www.onsemi.com 2 mAdc mAdc mAdc − VCE(sat) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Unit Vdc HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS: PNP Transistor 1000 −1.5 mA −2.0 mA −160 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) −200 −1.0 mA −120 −0.5 mA −80 IB = −0.2 mA −40 TA = 100°C 25°C TA = 25°C 0 VCE = −1.0 V 10 0 −1 −2 −3 −4 −5 −6 −1 VCE, COLLECTOR−EMITTER VOLTAGE (V) −25°C 100 VCE = −6.0 V −100 −1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C −10 IC/IB = 10 TA = 100°C 25°C −25°C −0.1 −0.01 −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC −10 −10,000 COMMON EMITTER VCE = 6 V −1 TA = 25°C IC/IB = 10 IB, BASE CURRENT (mA) BASE−EMITTER SATURATION VOLTAGE (V) −1000 −1 IC, COLLECTOR CURRENT (mA) −0.1 −1 −100 Figure 2. DC Current Gain 1000 10 −1 −10 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region 25°C −25°C 100 −1000 25°C TA = 100°C −25°C −100 −10 −1 −0.1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage www.onsemi.com 3 −1 HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS: NPN Transistor 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA TA = 100°C 25°C −25°C 100 40 TA = 25°C 0 0 1 2 3 VCE = 1.0 V 10 4 5 6 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 VCE = 6.0 V VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 8. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100°C 25°C 0.1 −25°C 0.01 10 100 1000 1 10 IC, COLLECTOR CURRENT (mA) 100 1000 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10 10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) BASE−EMITTER SATURATION VOLTAGE (V) 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage 10 100 1 TA = 25°C IC/IB = 10 0.1 TA = 100°C 25°C 1000 −25°C 100 10 1 0.1 1 10 100 1000 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE−EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage www.onsemi.com 4 0.9 1 HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS 10 10 NPN 100 ms 10 ms 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) PNP 1 ms Thermal Limit 0.1 0.01 0.001 0.1 Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Thermal Limit 0.1 0.01 0.001 0.1 100 100 ms 10 ms 1 ms 1 Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. NPN Safe Operating Area Figure 13. PNP Safe Operating Area www.onsemi.com 5 100 HN1B01FDW1T1G, SHN1B01FDW1T1G PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. D 6 5 4 2 3 E HE 1 b e 0.05 (0.002) q C A L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 − 10° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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