Daya D965 To-92 plastic-encapsulate transistor Datasheet

TO-92 Plastic-Encapsulate Transistors
D965
TRANSISTOR (NPN)
TO-92
FEATURES
Audio amplifier
z
z
Flash unit of camera
z
Switching circuit
1.EMITTER
2. COLLECTOR
3. BASE
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature
Value
42
22
6
5
750
150
Units
V
V
V
A
mW
-55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=0.1mA, IE=0
42
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
22
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
hFE(1)
VCE=2V, IC= 0.15 mA
150
hFE(2)
VCE= 2V,IC = 500 mA
340
hFE(3)
VCE=2V, IC = 2A
150
DC current gain
Collector-emitter saturation voltage
fT
Transition frequency
CLASSIFICATION OF
VCE(sat)
2000
IC=3000mA,IB=100 mA
VCE=6V,
IC=50mA,f=30MHz
0.35
150
hFE(2)
Rank
R
T
V
Range
340-600
560-950
900-2000
V
MHz
Typical Characteristics
D965
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