DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04EHE, NP86N04KHE NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP86N04EHE-E1-AY Note1, 2 NP86N04EHE-E2-AY Note1, 2 NP86N04KHE-E1-AY Note1 NP86N04KHE-E2-AY Note1 NP86N04CHE-S12-AZ Note1, 2 NP86N04DHE-S12-AY Note1, 2 NP86N04MHE-S18-AY Note1 NP86N04NHE-S18-AY Note1 LEAD PLATING PACKING Pure Sn (Tin) Tape 800 p/reel PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 43 A) • Low input capacitance (TO-262) Ciss = 5900 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14235EJ4V0DS00 (4th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±86 A ID(pulse) ±344 A Total Power Dissipation (TC = 25°C) PT 230 W Total Power Dissipation (TA = 25°C) PT 1.8 W Channel Temperature Tch 175 °C Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Note2 Tstg −55 to +175 °C Single Avalanche Current Note3 IAS 86/67/24 A Single Avalanche Energy Note3 EAS 74/450/580 mJ Storage Temperature Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.65 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14235EJ4V0DS NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 43 A 29 57 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 43 A Input Capacitance Ciss Output Capacitance S 3.5 4.4 mΩ VDS = 25 V, 5900 8900 pF Coss VGS = 0 V, 1200 1800 pF Reverse Transfer Capacitance Crss f = 1 MHz 530 960 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 43 A, 32 71 ns Rise Time tr VGS = 10 V, 24 59 ns Turn-off Delay Time td(off) RG = 1 Ω 110 220 ns Fall Time tf 33 82 ns Total Gate Charge QG VDD = 32 V, 110 170 nC Gate to Source Charge QGS VGS = 10 V, 22 nC Gate to Drain Charge QGD ID = 86 A 36 nC Body Diode Forward Voltage VF(S-D) IF = 86 A, VGS = 0 V 0.93 V Reverse Recovery Time trr IF = 86 A, VGS = 0 V, 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 125 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14235EJ4V0DS 3 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 280 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 240 200 160 120 80 40 0 100 125 150 175 200 25 0 TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA 100 125 150 175 200 800 ) (on DS S G RV ( PW ID(pulse) d ite ) Lim0 V =1 s DC P Limower D ite is d sip a =1 0μ 10 1m ID(DC) EAS - Single Avalanche Energy - mJ ID - Drain Current - A 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 100 50 TC - Case Temperature - °C s 0μ s tio 10 n 1 TC = 25°C 0.1 Single Pulse 0.1 1 10 700 600 580 mJ 450 mJ 500 400 IAS = 24 A 67 A 84 A 300 200 100 74 mJ 100 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.65°C/W 0.1 0.01 10 μ Single Pulse TC = 25°C 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14235EJ4V0DS 10 100 1000 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE Figure6. FORWARD TRANSFER CHARACTERISTICS Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed ID - Drain Current - A 400 ID - Drain Current - A 100 TA = −55°C 25°C 75°C 150°C 175°C 10 1 Pulsed 320 VGS = 10 V 240 160 80 0.1 1 2 4 3 5 0 6 0.4 0 10 TA = 175°C 75°C 25°C −55°C 0.1 0.01 0.01 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 10 VGS = 10 V 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 1 1.2 0.8 1.6 2 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 10 ID = 43 A 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 μA 4.0 3.0 2.0 1.0 0 ID - Drain Current - A Data Sheet D14235EJ4V0DS −50 0 50 100 150 Tch - Channel Temperature - °C 5 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 8 7 6 5 VGS = 10 V 3 2 VGS = 10 V 100 0V 10 1 1 ID = 43 A 0 −50 50 0 100 0.1 0 150 Tch - Channel Temperature - °C td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 1000 VGS = 0 V f = 1 MHz 10000 Ciss 1000 Coss Crss 100 0.1 1 10 100 tf td(off) 100 td(on) tr 10 VDD = 20 V VGS = 10 V RG = 1 Ω 1 0.1 Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 10 9 8 VGS 7 6 30 5 4 20 3 10 100 2 VDS 1 ID = 86 A 0 20 40 60 80 QG - Gate Charge - nC IF - Diode Forward Current - A 6 VDD = 32 V 20 V 8V 40 0 10 10 50 di/dt = 100 A/μs VGS = 0 V 1.0 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 Figure15. SWITCHING CHARACTERISTICS Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 Pulsed 1.0 0.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D14235EJ4V0DS 100 0 120 VGS - Gate to Source Voltage - V 4 1000 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14235EJ4V0DS 7 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE 6)TO-262 (MP-25SK) 1 2 3 0.8 ± 0.1 0.5 ± 0.2 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 4 4.45 ± 0.2 10.1 ± 0.3 15.9 MAX. 1.27 ± 0.2 2.54 TYP. 10.0 ± 0.2 13.7 ± 0.3 3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 8.9 ± 0.2 1.2 ± 0.3 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14235EJ4V0DS NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 86N04 HE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14235EJ4V0DS 9 NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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