GB-PT333 SERIES Phototransistor (5mm) DESCRIPTION: PACKAGE DIMENSIONS The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection of infrared application. Unit: mm Tol: +/- 0.2mm 5.9 φ5.0 8.6 o ABSOLUTE MAXIMUM RATINGS: (Ta=25 C) Max Parameter 100mW Power Dissipation 30V Collector-Emitter Voltage 5V Emitter-Collector Voltage 20mA Collector Current -40oC To +85oC Operating Temperature Range -55oC To +100oC Storage Temperature Range o Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds 1.0 1.0 Max. 25.4 Min. 0.5 1.0 2.54 NOTES : 1. All dimensions are in millimeters. 2. Lead spacing is measured where the leads emerge from the package. 3. Protuded resin under flange is 1.5 mm (0.059") Max. 4. Specifications are subject to change without notice. c b e o ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 C) Part No. Lens Color GB-PT333A21C Water Clear GB-PT333A21BT Blue Transparent GB-PT333A21DB Dark Blue Range of Spectral Bandwidth λ 0.5 (nm) CollectorEmitter Saturation Voltage Collector Dark Current ID (nA) Typ Typ Max Max Min 400~1200 0.4 100 980 Water Clear GB-PT333A22BT Blue Transparent GB-PT333A22DB Dark Blue 980 400~1200 0.4 Water Clear GB-PT333B21BT Blue Transparent 860 Dark Blue 400~1200 Water Clear GB-PT333B22BT Blue Transparent GB-PT333B22DB Dark Blue 860 400~1200 Typ Max Typ 0.70 1.30 1.90 +20 +20 1.08 3.08 5.23 0.4 0.70 1.30 1.90 100 840~1200 GB-PT333B22C Angular Response ∆θ(Deg) 1.40 4.00 6.80 100 840~1200 GB-PT333B21C On State Collector Current IC (on) 0.54 1.00 1.46 840~1200 GB-PT333A22C GB-PT333B21DB Wave Length of Peak Sensitivity λp (nm) +20 0.54 1.00 1.46 0.4 0.70 2.00 3.40 100 +20 0.54 1.54 2.62 840~1200 o TESTING CONDITION FOR EACH PARAMETER (Ta=25 C) Parameter Symbol Unit Collector-Emitter Breakdown Voltage VBR CEO V Emitter-Collector Breakdown Voltage VBR ECO V Collector-Emitter Saturation Voltage VCE (SAT) V Collector Dark Current ID nA Rise Time TR µs Fall Time TF µs IC(ON) mA ∆θ Deg On State Collector Current Angular Response Test Condition Ic=100µA Ee=0mW/cm2 IE=100µA Ee=0mW/cm2 IC=0.1mA H=2.5mW/cm2 VCE=10V Ee=0m/W/cm2 VCC=5V IC=1mA RL=100Ω VCE=5V Ee=1mW/cm2 λ=940nm 0o 10o 20o 30o 40o 1.0 0.9 50o 0.8 60o 70o 0.7 80o 90o 0.5 0.3 0.1 0.2 0.4 0.6 SPATIAL DISTRIBUTION