POSEICO ATF743S20U Fast switching thyristor Datasheet

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF743
FINAL SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
2000
2595
36
70
V
A
kA
µs
mag 06 - ISSUE : 02
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
2000
V
V
RSM
Non-repetitive peak reverse voltage
125
2100
V
V
DRM
Repetitive peak off-state voltage
125
2000
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
300
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
300
mA
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2595
A
I
T (AV)
Mean on-state current
180° sin, 1 kHz, Th=55°C, double side cooled
2390
A
I
TSM
CONDUCTING
Surge on-state current, non repetitive
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
On-state voltage
On-state current =
V
r
T
125
36
6480 x1E3
4000 A
125
2,02
kA
A²s
V
T(TO)
Threshold voltage
125
1,30
V
T
On-state slope resistance
125
0,180
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 75% of VDRM
125
600
V/µs
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm , tr=.5 µs
25
0,8
µs
tq
Circuit commutated turn-off time
125
70
µs
800
µC
di/dt =
dV/dt =
Q rr
Reverse recovery charge
60
A/µs, I= 1000
I = 2000
A
200 V/µs , up to
80%
di/dt =
60
A/µs, I= 1000
I = 4000
A
VR =
50
V
A
VDRM
A
125
I rr
Peak reverse recovery current
350
I
H
Holding current, typical
VD=5V, gate open circuit
25
mA
A
I
L
Latching current, typical
VD=12V, tp=30µs
25
mA
GT
Gate trigger voltage
VD=5V
25
GATE
V
3,5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
25
5
V
P
GM
Peak gate power dissipation
25
150
W
P
G(AV)
Average gate power dissipation
25
2
W
R
th(j-h)
Thermal impedance, DC
11
°C/kW
T
j
Operating junction temperature
Pulse width 100 µs
MOUNTING
F
Junction to heatsink, double side cooled
Mounting force
Mass
-30 / 125
°C
35.0 / 40.0
kN
1700
tq code
ORDERING INFORMATION : ATF743 S 20 U
tq code
standard specification
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF743 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 02
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
2500
4000 A
2000
Qrr [µC]
2000 A
1500
1000 A
1000
500
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1400
4000 A
2000 A
1200
Irr [A]
1000
1000 A
800
600
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
di/dt
IF
ta
Softness (s factor) s = tb / ta
Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb
Vr
ATF743 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 02
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
9000
40
8000
35
7000
30
On-state Current [A]
6000
ITSM [kA]
25
5000
20
4000
15
3000
10
2000
5
1000
0
0
0,6
1,1
1,6
2,1
On-state Voltage [V]
1
2,6
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
14
12
Zth j-h [°C/kW]
10
8
6
4
2
0
0,001
0,01
0,1
1
t[s]
10
100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by
100
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